Patents by Inventor Lixia ZHAO

Lixia ZHAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11921370
    Abstract: Disclosed are a display panel and a method of manufacturing a display panel. The display panel includes an array substrate; a color film substrate disposed opposite to the array substrate; a liquid crystal layer disposed between the array substrate and the color film substrate; a reflective layer disposed on a side of the array substrate facing the liquid crystal layer. The reflective layer comprises a plurality of first convex structures, each of the first convex structures has a first sidewall extending from a bottom to a top of each of the first convex structures, and an angle between a normal line of the first sidewall and a horizontal plane is greater than 0° and less than or equal to 10°.
    Type: Grant
    Filed: July 24, 2022
    Date of Patent: March 5, 2024
    Assignee: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Ying Lu, Yingchun Zhao, Wuguang Liu, Lixia Li
  • Patent number: 11922895
    Abstract: A liquid crystal display panel, a driving method, and a terminal thereof are disclosed. The display panel includes a pixel structure including data lines and scan lines, wherein each data line is connected to at least two pixel groups, and each pixel group includes three sub-pixels having different colors sequentially connected to the data lines; and a first driving unit electrically connected to the scan lines and inputting scan signals to the scan lines in a preset order to solve a problem of horizontal bright and dark lines.
    Type: Grant
    Filed: November 5, 2021
    Date of Patent: March 5, 2024
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventors: Yoonsung Um, Lixia Li, Bangyin Peng, Yingchun Zhao, Fen Long, Qiqi Zhang
  • Publication number: 20240066602
    Abstract: A high-throughput 3D printing system for preparing multi-component, small sized samples, includes a raw material supply module, providing a various kinds of metal powders for printing small sized samples; the first mixer module, mixing the metal powders obtained from the raw material supply module to generate the first blended metal powders; the second mixer module, mixing the first mixed metal powders, in order to generate the second blended metal powders for printing small sized samples; the first printing module, printing the secondary blended metal powder into a small-sized sample; a control module, controlling other functional modules of the high-throughput 3D printing system for generating small-size samples.
    Type: Application
    Filed: November 22, 2022
    Publication date: February 29, 2024
    Inventors: Lei Zhao, Hui Wang, Lixia Yang, Haizhou Wang, Xuejing Shen, Yunhai Jia, Dongling Li, Xing Yu, Suran Liu
  • Publication number: 20230227527
    Abstract: Provided are T cell receptors that recognize or bind to Epstein-Barr virus (EBV) antigens, genetically engineered cells, and cell-based therapies.
    Type: Application
    Filed: June 4, 2021
    Publication date: July 20, 2023
    Inventors: Haiyang Wu, Jie Zhou, Dachuan Deng, Si Li, Lixia Zhao, Lu Zhang, Rui Chen, Paul Bryson, Poorva Prakash Mudgal
  • Patent number: 11656893
    Abstract: The invention discloses a container Dockerfile and container mirror image quick generation methods and systems. The container Dockerfile quick generation method includes the steps of for a to-be-packaged target application, running and performing tracking execution on the target application, and recording operation system dependencies of the target application in the running process; organizing and constructing a file list required for packaging the target application to a container mirror image; and according to the file list required for packaging the target application to the container mirror image, generating a Dockerfile and container mirror image file creation directory used for packaging the target application to the container mirror image. Any target application can be automatically packaged by the invention to a container; the construction of an executable minimal environmental closure of the target application is finished; the packaged container is smaller than a manually made container.
    Type: Grant
    Filed: November 21, 2018
    Date of Patent: May 23, 2023
    Assignee: GENETALKS BIO-TECH (CHANGSHA) CO., LTD.
    Inventors: Zhuo Song, Gen Li, Xu Zhou, Chouxian Ma, Chenglong Xie, Kan Wu, Zhaohui Sun, Xiali Xu, Chungen Yi, Yao Yang, Lixia Zhao, Wenfei Ning, Jun Chuan, Junxiang Tang, Delong Zhu, Haibo Mao, Yanhuang Jiang, Yanfei Li
  • Publication number: 20230077100
    Abstract: T cell receptors that recognize or bind to human papilloma virus (HPV) antigens, genetically engineered cells and cell-based therapies are provided.
    Type: Application
    Filed: February 5, 2021
    Publication date: March 9, 2023
    Inventors: Lixia Zhao, Rui Chen, Paul Bryson, Si Li, Haiyang Wu, Jie Zhou, Zhenbo Su
  • Publication number: 20220125845
    Abstract: The disclosure relates to anti-ALPP CAR-T cell therapies for the treatment of cancer patients having ALPP-positive cancer, including e.g., ovarian, endometrial, cervical, testicular cancers, etc.
    Type: Application
    Filed: December 23, 2021
    Publication date: April 28, 2022
    Inventors: Rui CHEN, Peter ALEXANDER, Lixia ZHAO, Brooke WOLFF, Rhiannon ROARK
  • Publication number: 20220088579
    Abstract: Provided are a semiconductor material based on metal nanowires and a porous nitride, and a preparation method thereof. The semiconductor material includes: a substrate; a buffer layer formed on the substrate; and a composite material layer formed on the buffer layer the composite material layer includes: a transverse porous nitride template layer; and a plurality of metal nanowires filled in pores of the transverse porous nitride template layer.
    Type: Application
    Filed: October 18, 2018
    Publication date: March 24, 2022
    Inventors: Lixia ZHAO, Jing LI, Chao YANG, Zhiguo YU, Xin XI, Kaiyou WANG
  • Patent number: 11258231
    Abstract: A GaN-based VCSEL chip based on porous DBR and a manufacturing method of the same, wherein the chip includes: a substrate; a buffer layer formed on the substrate; a bottom porous DBR layer formed on the buffer layer; an n-type doped GaN layer formed on the bottom porous DBR layer, which is etched downward on its periphery to form a mesa; an active layer formed on the n-type doped GaN layer; an electron blocking layer formed on the active layer; a p-type doped GaN layer formed on the electron blocking layer; a current limiting layer formed on the p-type doped GaN layer with a current window formed at a center thereof, wherein the current limiting layer covers sidewalls of the active layer, the electron blocking layer and the convex portion of the n-type doped GaN layer; a transparent electrode formed on the p-type doped GaN layer; an n-electrode formed on the mesa of the n-type doped GaN layer; a p-electrode formed on the transparent electrode with a recess formed therein; and a dielectric DBR layer formed on
    Type: Grant
    Filed: June 1, 2017
    Date of Patent: February 22, 2022
    Assignee: Institute of Semiconductors, Chinese Academy of Sciences
    Inventors: Lixia Zhao, Chao Yang, Lei Liu, Jing Li, Kaiyou Wang, Hongda Chen
  • Patent number: 10964829
    Abstract: An InGaN-based resonant cavity enhanced detector chip based on porous DBR, including: a substrate (10); a buffer layer (11) formed on the substrate (10); a bottom porous DBR layer (12) formed on the buffer layer (11); an n-type GaN layer (13) formed on the bottom porous DBR layer (12), wherein one side of the n-type GaN layer (13) is recessed downward to form a mesa (13?), and the other side of the n-type GaN layer (13) is protruded; an active region (14) formed on the n-type GaN layer (13); a p-type GaN layer (15) formed on the active region (14); a sidewall passivation layer (20) formed on an upper surface of the p-type GaN layer (15) and sidewalls of the protruded n-type GaN layer (13), the active region (14), and the p-type GaN layer (15), wherein the sidewall passivation layer (20) on the upper surface of the p-type GaN layer (15) has a window in a middle; a transparent conductive layer (16) formed on the sidewall passivation layer (20) and the p-type GaN layer (15) at the window; an n-type electrode (18
    Type: Grant
    Filed: June 1, 2017
    Date of Patent: March 30, 2021
    Assignee: Institute of Semiconductors, Chinese Academy of Sciences
    Inventors: Lixia Zhao, Lei Liu, Chao Yang, Jing Li, Kaiyou Wang
  • Publication number: 20200293354
    Abstract: The invention discloses a container Dockerfile and container mirror image quick generation methods and systems. The container Dockerfile quick generation method includes the steps of for a to-be-packaged target application, running and performing tracking execution on the target application, and recording operation system dependencies of the target application in the running process; organizing and constructing a file list required for packaging the target application to a container mirror image; and according to the file list required for packaging the target application to the container mirror image, generating a Dockerfile and container mirror image file creation directory used for packaging the target application to the container mirror image. Any target application can be automatically packaged by the invention to a container; the construction of an executable minimal environmental closure of the target application is finished; the packaged container is smaller than a manually made container.
    Type: Application
    Filed: November 21, 2018
    Publication date: September 17, 2020
    Applicant: GENETALKS BIO-TECH (CHANGSHA) CO., LTD.
    Inventors: Zhuo SONG, Gen LI, Xu ZHOU, Chouxian MA, Chenglong XIE, Kan WU, Zhaohui SUN, Xiali XU, Chungen YI, Yao YANG, Lixia ZHAO, Wenfei NING, Jun CHUAN, Junxiang TANG, Delong ZHU, Haibo MAO, Yanhuang JIANG, Yanfei LI
  • Publication number: 20200185882
    Abstract: A GaN-based VCSEL chip based on porous DBR and a manufacturing method of the same, wherein the chip includes: a substrate; a buffer layer formed on the substrate; a bottom porous DBR layer formed on the buffer layer; an n-type doped GaN layer formed on the bottom porous DBR layer, which is etched downward on its periphery to form a mesa; an active layer formed on the n-type doped GaN layer; an electron blocking layer formed on the active layer; a p-type doped GaN layer formed on the electron blocking layer; a current limiting layer formed on the p-type doped GaN layer with a current window formed at a center thereof, wherein the current limiting layer covers sidewalls of the active layer, the electron blocking layer and the convex portion of the n-type doped GaN layer; a transparent electrode formed on the p-type doped GaN layer; an n-electrode formed on the mesa of the n-type doped GaN layer; a p-electrode formed on the transparent electrode with a recess formed therein; and a dielectric DBR layer formed on
    Type: Application
    Filed: June 1, 2017
    Publication date: June 11, 2020
    Applicant: Institute of Semiconductors, Chinese Academy of Sciences
    Inventors: Lixia Zhao, Chao YANG, Lei Liu, Jing Li, Kaiyou Wang, Hongda Chen
  • Publication number: 20200035843
    Abstract: An InGaN-based resonant cavity enhanced detector chip based on porous DBR, including: a substrate (10); a buffer layer (11) formed on the substrate (10); a bottom porous DBR layer (12) formed on the buffer layer (11); an n-type GaN layer (13) formed on the bottom porous DBR layer (12), wherein one side of the n-type GaN layer (13) is recessed downward to form a mesa (13?), and the other side of the n-type GaN layer (13) is protruded; an active region (14) formed on the n-type GaN layer (13); a p-type GaN layer (15) formed on the active region (14); a sidewall passivation layer (20) formed on an upper surface of the p-type GaN layer (15) and sidewalls of the protruded n-type GaN layer (13), the active region (14), and the p-type GaN layer (15), wherein the sidewall passivation layer (20) on the upper surface of the p-type GaN layer (15) has a window in a middle; a transparent conductive layer (16) formed on the sidewall passivation layer (20) and the p-type GaN layer (15) at the window; an n-type electrode (18
    Type: Application
    Filed: June 1, 2017
    Publication date: January 30, 2020
    Applicant: Institute of Semiconductors, Chinese Academy of Sciences
    Inventors: Lixia Zhao, Lei Liu, Chao Yang, Jing Li, Kaiyou Wang
  • Patent number: 10524818
    Abstract: A double-joint sickle knife for an endoscopy therapy includes a knife head, a knife base, a knife body, an outer sheath, a guide wire, a handle and a sliding rod. The knife head is connected with one end of the knife base by a transverse joint, and the other end of the knife base is connected with a head end of the knife body by a longitudinal joint. The outer sheath is sleeved on the outside of the knife body and capable of sliding along the knife body. The tail end of the knife body is connected with one end of the handle, and a sliding rod for adjusting the transverse joint is arranged on the handle. The guide wire is electric conductive. One end of the guide wire is connected with the knife head, and passes through the knife base, the knife body, the handle and the sliding rod successively. The other end of the guide wire is connected with the power port.
    Type: Grant
    Filed: March 17, 2016
    Date of Patent: January 7, 2020
    Assignee: HARBIN MEDICAL UNIVERSITY
    Inventors: Bingrong Liu, Lixia Zhao, Bing Du, Yaju Du, Lingjian Kong, Shui Liu
  • Publication number: 20160270812
    Abstract: A double-joint sickle knife for an endoscopy therapy includes a knife head, a knife base, a knife body, an outer sheath, a guide wire, a handle and a sliding rod. The knife head is connected with one end of the knife base by a transverse joint, and the other end of the knife base is connected with a head end of the knife body by a longitudinal joint. The outer sheath is sleeved on the outside of the knife body and capable of sliding along the knife body. The tail end of the knife body is connected with one end of the handle, and a sliding rod for adjusting the transverse joint is arranged on the handle. The guide wire is electric conductive. One end of the guide wire is connected with the knife head, and passes through the knife base, the knife body, the handle and the sliding rod successively. The other end of the guide wire is connected with the power port.
    Type: Application
    Filed: March 17, 2016
    Publication date: September 22, 2016
    Inventors: Bingrong Liu, Lixia Zhao, Bing Du, Yaju Du, Lingjian Kong, Shui Liu
  • Patent number: 9091721
    Abstract: The disclosure provides a system and method for multi-functional online testing of semiconductor light-emitting devices or modules. The system includes an electrical characteristic generating and testing equipment, one or more optical characteristic detecting and controlling equipments, an optical signal processing and analyzing equipment, one or more thermal characteristic detecting equipments, a central monitoring and processing computer, a multi-channel integrated drive controlling equipment, one or more multi-stress accelerated degradation controlling equipments, and one or more load boards. The present disclosure enables in-situ online monitoring and testing under accelerated degradation in a multi-stress accelerated degradation environment.
    Type: Grant
    Filed: October 17, 2013
    Date of Patent: July 28, 2015
    Assignee: INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES
    Inventors: Lixia Zhao, Zichao Zhou, Hua Yang, Junxi Wang, Jinmin Li
  • Publication number: 20150015266
    Abstract: The disclosure provides a system and method for multi-functional online testing of semiconductor light-emitting devices or modules. The system comprises an electrical characteristic generating and testing equipment, one or more optical characteristic detecting and controlling equipments, an optical signal processing and analyzing equipment, one or more thermal characteristic detecting equipments, a central monitoring and processing computer, a multi-channel integrated drive controlling equipment, one or more multi-stress accelerated degradation controlling equipments, and one or more load boards. The present disclosure enables in-situ online monitoring and testing under accelerated degradation in a multi-stress accelerated degradation environment.
    Type: Application
    Filed: October 17, 2013
    Publication date: January 15, 2015
    Applicant: INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY SCIENCE
    Inventors: Lixia ZHAO, Zichao ZHOU, Hua YANG, Junxi WANG, Jinmin LI