Abstract: Provided are T cell receptors that recognize or bind to Epstein-Barr virus (EBV) antigens, genetically engineered cells, and cell-based therapies.

Abstract: The invention discloses a container Dockerfile and container mirror image quick generation methods and systems. The container Dockerfile quick generation method includes the steps of for a to-be-packaged target application, running and performing tracking execution on the target application, and recording operation system dependencies of the target application in the running process; organizing and constructing a file list required for packaging the target application to a container mirror image; and according to the file list required for packaging the target application to the container mirror image, generating a Dockerfile and container mirror image file creation directory used for packaging the target application to the container mirror image. Any target application can be automatically packaged by the invention to a container; the construction of an executable minimal environmental closure of the target application is finished; the packaged container is smaller than a manually made container.

Abstract: T cell receptors that recognize or bind to human papilloma virus (HPV) antigens, genetically engineered cells and cell-based therapies are provided.

Abstract: The disclosure relates to anti-ALPP CAR-T cell therapies for the treatment of cancer patients having ALPP-positive cancer, including e.g., ovarian, endometrial, cervical, testicular cancers, etc.

Abstract: Provided are a semiconductor material based on metal nanowires and a porous nitride, and a preparation method thereof. The semiconductor material includes: a substrate; a buffer layer formed on the substrate; and a composite material layer formed on the buffer layer the composite material layer includes: a transverse porous nitride template layer; and a plurality of metal nanowires filled in pores of the transverse porous nitride template layer.

Abstract: A GaN-based VCSEL chip based on porous DBR and a manufacturing method of the same, wherein the chip includes: a substrate; a buffer layer formed on the substrate; a bottom porous DBR layer formed on the buffer layer; an n-type doped GaN layer formed on the bottom porous DBR layer, which is etched downward on its periphery to form a mesa; an active layer formed on the n-type doped GaN layer; an electron blocking layer formed on the active layer; a p-type doped GaN layer formed on the electron blocking layer; a current limiting layer formed on the p-type doped GaN layer with a current window formed at a center thereof, wherein the current limiting layer covers sidewalls of the active layer, the electron blocking layer and the convex portion of the n-type doped GaN layer; a transparent electrode formed on the p-type doped GaN layer; an n-electrode formed on the mesa of the n-type doped GaN layer; a p-electrode formed on the transparent electrode with a recess formed therein; and a dielectric DBR layer formed on

Abstract: An InGaN-based resonant cavity enhanced detector chip based on porous DBR, including: a substrate (10); a buffer layer (11) formed on the substrate (10); a bottom porous DBR layer (12) formed on the buffer layer (11); an n-type GaN layer (13) formed on the bottom porous DBR layer (12), wherein one side of the n-type GaN layer (13) is recessed downward to form a mesa (13?), and the other side of the n-type GaN layer (13) is protruded; an active region (14) formed on the n-type GaN layer (13); a p-type GaN layer (15) formed on the active region (14); a sidewall passivation layer (20) formed on an upper surface of the p-type GaN layer (15) and sidewalls of the protruded n-type GaN layer (13), the active region (14), and the p-type GaN layer (15), wherein the sidewall passivation layer (20) on the upper surface of the p-type GaN layer (15) has a window in a middle; a transparent conductive layer (16) formed on the sidewall passivation layer (20) and the p-type GaN layer (15) at the window; an n-type electrode (18

Abstract: The invention discloses a container Dockerfile and container mirror image quick generation methods and systems. The container Dockerfile quick generation method includes the steps of for a to-be-packaged target application, running and performing tracking execution on the target application, and recording operation system dependencies of the target application in the running process; organizing and constructing a file list required for packaging the target application to a container mirror image; and according to the file list required for packaging the target application to the container mirror image, generating a Dockerfile and container mirror image file creation directory used for packaging the target application to the container mirror image. Any target application can be automatically packaged by the invention to a container; the construction of an executable minimal environmental closure of the target application is finished; the packaged container is smaller than a manually made container.

Abstract: A GaN-based VCSEL chip based on porous DBR and a manufacturing method of the same, wherein the chip includes: a substrate; a buffer layer formed on the substrate; a bottom porous DBR layer formed on the buffer layer; an n-type doped GaN layer formed on the bottom porous DBR layer, which is etched downward on its periphery to form a mesa; an active layer formed on the n-type doped GaN layer; an electron blocking layer formed on the active layer; a p-type doped GaN layer formed on the electron blocking layer; a current limiting layer formed on the p-type doped GaN layer with a current window formed at a center thereof, wherein the current limiting layer covers sidewalls of the active layer, the electron blocking layer and the convex portion of the n-type doped GaN layer; a transparent electrode formed on the p-type doped GaN layer; an n-electrode formed on the mesa of the n-type doped GaN layer; a p-electrode formed on the transparent electrode with a recess formed therein; and a dielectric DBR layer formed on

Abstract: An InGaN-based resonant cavity enhanced detector chip based on porous DBR, including: a substrate (10); a buffer layer (11) formed on the substrate (10); a bottom porous DBR layer (12) formed on the buffer layer (11); an n-type GaN layer (13) formed on the bottom porous DBR layer (12), wherein one side of the n-type GaN layer (13) is recessed downward to form a mesa (13?), and the other side of the n-type GaN layer (13) is protruded; an active region (14) formed on the n-type GaN layer (13); a p-type GaN layer (15) formed on the active region (14); a sidewall passivation layer (20) formed on an upper surface of the p-type GaN layer (15) and sidewalls of the protruded n-type GaN layer (13), the active region (14), and the p-type GaN layer (15), wherein the sidewall passivation layer (20) on the upper surface of the p-type GaN layer (15) has a window in a middle; a transparent conductive layer (16) formed on the sidewall passivation layer (20) and the p-type GaN layer (15) at the window; an n-type electrode (18

Abstract: A double-joint sickle knife for an endoscopy therapy includes a knife head, a knife base, a knife body, an outer sheath, a guide wire, a handle and a sliding rod. The knife head is connected with one end of the knife base by a transverse joint, and the other end of the knife base is connected with a head end of the knife body by a longitudinal joint. The outer sheath is sleeved on the outside of the knife body and capable of sliding along the knife body. The tail end of the knife body is connected with one end of the handle, and a sliding rod for adjusting the transverse joint is arranged on the handle. The guide wire is electric conductive. One end of the guide wire is connected with the knife head, and passes through the knife base, the knife body, the handle and the sliding rod successively. The other end of the guide wire is connected with the power port.

Abstract: A double-joint sickle knife for an endoscopy therapy includes a knife head, a knife base, a knife body, an outer sheath, a guide wire, a handle and a sliding rod. The knife head is connected with one end of the knife base by a transverse joint, and the other end of the knife base is connected with a head end of the knife body by a longitudinal joint. The outer sheath is sleeved on the outside of the knife body and capable of sliding along the knife body. The tail end of the knife body is connected with one end of the handle, and a sliding rod for adjusting the transverse joint is arranged on the handle. The guide wire is electric conductive. One end of the guide wire is connected with the knife head, and passes through the knife base, the knife body, the handle and the sliding rod successively. The other end of the guide wire is connected with the power port.

Abstract: The disclosure provides a system and method for multi-functional online testing of semiconductor light-emitting devices or modules. The system includes an electrical characteristic generating and testing equipment, one or more optical characteristic detecting and controlling equipments, an optical signal processing and analyzing equipment, one or more thermal characteristic detecting equipments, a central monitoring and processing computer, a multi-channel integrated drive controlling equipment, one or more multi-stress accelerated degradation controlling equipments, and one or more load boards. The present disclosure enables in-situ online monitoring and testing under accelerated degradation in a multi-stress accelerated degradation environment.

Abstract: The disclosure provides a system and method for multi-functional online testing of semiconductor light-emitting devices or modules. The system comprises an electrical characteristic generating and testing equipment, one or more optical characteristic detecting and controlling equipments, an optical signal processing and analyzing equipment, one or more thermal characteristic detecting equipments, a central monitoring and processing computer, a multi-channel integrated drive controlling equipment, one or more multi-stress accelerated degradation controlling equipments, and one or more load boards. The present disclosure enables in-situ online monitoring and testing under accelerated degradation in a multi-stress accelerated degradation environment.