Abstract: Disclosed are a light-emitting module and a display device. The light-emitting module includes a substrate, a first driving circuit layer and at least one first light-emitting unit group. At least one first groove is provided on a surface of the substrate. The first driving circuit layer is located on the substrate and includes at least one first signal line located in the first groove. The first light-emitting unit group is located on a side, where the first driving circuit layer is provided, of the substrate, and includes at least one first lamp bead, and the first lamp bead is connected in series on the first signal line. In the light-emitting module, the first signal line is arranged in the first groove of the substrate, which is equivalent to being embedded in the substrate.

Abstract: Disclosed are a transparent heating film and a heating glass including the transparent heating film. The transparent heating film includes a transparent supporting body, a conductive grid, and a penetration window. A side of the transparent supporting body is provided with a plurality of trenches interconnected to each other in a grid shape; the conductive grid is formed by filling the plurality of trenches with a conductive material; and the penetration window is located between and partitioned with the conductive grid. The penetration window located between the conductive grid may disrupt or weaken a shielding effect of the conductive grid, thereby facilitating penetration of a signal.

Abstract: Provided are crystal forms A, B, D, E, F, G and H of valsartan disodium salt and a preparation method therefor.

Abstract: Provided are new crystalline forms A, B, C, D and E of sacubitril sodium salt and a method for preparation thereof, pharmaceutical compositions thereof, and application thereof in preparing drugs for enkephalinase-related diseases.

Abstract: Provided are new crystalline forms A, B, C, D and E of sacubitril sodium salt and a method for preparation thereof, pharmaceutical compositions thereof, and application thereof in preparing drugs for enkephalinase-related diseases.

Abstract: Provided are crystal forms A, B, D, E, F, G and H of valsartan disodium salt and a preparation method therefor.

Abstract: A kind of congestion improvement method based on the QUIC protocol adds the information of round trip delay in the congestion algorithm, self-adaptive changes the value of ? to judge the situation of current network through comparison between the RTT of last time and the current RTT and then adjusts the current target window value in accordance with the current network situation, changing the congestion window based on the cubic growth curve of the cubic algorithm. This improvement method can make the QUIC protocol judge the current network situation more timely and accurately and can make the congestion window change quickly to fully utilize the bandwidth. The maximum congestion window limitation 200 exists in the QUIC protocol, which will not exceed 200 no matter how the congestion window grows. Such limitation largely reduces the throughput rate of QUIC protocol in the network environment with high bandwidth and long round trip delay.

Abstract: A kind of transmission method based on the learnable power model, which conducts periodic record for the historical change trend of the network. This method conducts weighting smooth processing on the round trip time and judges the changing trend of congestion control window. Then, it establishes model for the relationship between network power and the congestion control widow. When a new ACK is received, it immediately updates the window of power model. Finally, it forecasts the size of the congestion control window of the next time period by combining the congestion window and the network power changing trend. For the network packet loss or time-out events, the retransmission mechanism of traditional TCP is used, and when the packet loss ends, the power model process is used again. This invention reduces the influence of the network random events of the estimation error of traditional algorithm.

Abstract: A kind of self-adaptive network congestion control method based on SCPS-TP, which includes the following steps: The SCPS-TP's gateway source-end receives and transmits the packets to destination end; Judge if there is new packet received in accordance with the analyzed ACK; If there is no new packet received, when the duplicate ACK counter increase to a certain value, change the window size's growth pattern to linear self-adaptive pattern; If there is new packet received, the congestion control is in the exponential growth pattern. After window is enlarged, Diff is bigger than the set threshold value and the congestion control method is changed to linear self-adaptive pattern; If congestion control is in the linear self-adaptive pattern, adjust window size in accordance with Diff; The SCPS-TP's gateway source-end sends the packets in the packet loss buffer to destination end and sends new packets in accordance with the size of congestion window.

Abstract: A kind of transmission method based on the learnable power model, which conducts periodic record for the historical change trend of the network. This method conducts weighting smooth processing on the round trip time and judges the changing trend of congestion control window. Then, it establishes model for the relationship between network power and the congestion control widow. When a new ACK is received, it immediately updates the window of power model. Finally, it forecasts the size of the congestion control window of the next time period by combining the congestion window and the network power changing trend. For the network packet loss or time-out events, the retransmission mechanism of traditional TCP is used, and when the packet loss ends, the power model process is used again. This invention reduces the influence of the network random events of the estimation error of traditional algorithm.

Abstract: The present invention relates to a method for manufacturing a laterally insulated-gate bipolar transistor, comprising: providing a wafer having an N-type buried layer (10), an STI (40), and a first N well (22)/a first P well (24) which are formed successively from above a substrate; depositing and forming a high-temperature oxide film on the first N well (22) of the wafer; performing thermal drive-in on the wafer and performing photoetching and etching on the high-temperature oxide film to form a mini oxide layer (60); performing photoetching and ion implantation so as to form a second N well (32) inside the first N well (22) and second P wells (34) inside the first N well (22) and the first P well (24); then successively forming a gate oxide layer and a polysilicon gate (72), wherein one end of the gate oxide layer and the polysilicon gate (72) extends onto the second P well (34) inside the first N well (22), and the other end extends onto the mini oxide layer (60) on the second N well (32); and photoetching

Abstract: The present invention relates to a method for manufacturing a laterally insulated-gate bipolar transistor, comprising: providing a wafer having an N-type buried layer (10), an STI (40), and a first N well (22)/a first P well (24) which are formed successively from above a substrate; depositing and forming a high-temperature oxide film on the first N well (22) of the wafer; performing thermal drive-in on the wafer and performing photoetching and etching on the high-temperature oxide film to form a mini oxide layer (60); performing photoetching and ion implantation so as to form a second N well (32) inside the first N well (22) and second P wells (34) inside the first N well (22) and the first P well (24); then successively forming a gate oxide layer and a polysilicon gate (72), wherein one end of the gate oxide layer and the polysilicon gate (72) extends onto the second P well (34) inside the first N well (22), and the other end extends onto the mini oxide layer (60) on the second N well (32); and photoetching

Abstract: A kind of congestion improvement method based on the QUIC protocol adds the information of round trip delay in the congestion algorithm, self-adaptive changes the value of ? to judge the situation of current network through comparison between the RTT of last time and the current RTT and then adjusts the current target window value in accordance with the current network situation, changing the congestion window based on the cubic growth curve of the cubic algorithm. This improvement method can make the QUIC protocol judge the current network situation more timely and accurately and can make the congestion window change quickly to fully utilize the bandwidth. The maximum congestion window limitation 200 exists in the QUIC protocol, which will not exceed 200 no matter how the congestion window grows. Such limitation largely reduces the throughput rate of QUIC protocol in the network environment with high bandwidth and long round trip delay.

Abstract: A kind of self-adaptive network congestion control method based on SCPS-TP, which includes the following steps: The SCPS-TP's gateway source-end receives and transmits the packets to destination end; Judge if there is new packet received in accordance with the analyzed ACK; If there is no new packet received, when the duplicate ACK counter increase to a certain value, change the window size's growth pattern to linear self-adaptive pattern; If there is new packet received, the congestion control is in the exponential growth pattern. After window is enlarged, Diff is bigger than the set threshold value and the congestion control method is changed to linear self-adaptive pattern; If congestion control is in the linear self-adaptive pattern, adjust window size in accordance with Diff; The SCPS-TP's gateway source-end sends the packets in the packet loss buffer to destination end and sends new packets in accordance with the size of congestion window.

Abstract: The application discloses a multi-input DC converter and a PFC circuit. The multi-input DC converter of the application includes n diodes, a transformer, a switching transistor, a rectifier and filter circuit, and a load. The transformer includes a primary winding and a secondary winding, the number of turns of the primary winding is N1, and the primary winding is divided into n sections by leading out n?1 taps in a specific manner; anodes of the n diodes are respectively connected to n input sources in turn, cathodes of the n diodes are respectively connected to a first terminal of the primary winding and n?1 tap terminals in turn, a second terminal of the primary winding is grounded through the switching transistor, and the secondary winding delivers energy to the rectifier and filter circuit and then to the load. The structure is simple, and the cost is low.

Abstract: The application discloses a multi-input DC converter and a PFC circuit. The multi-input DC converter of the application includes n diodes, a transformer, a switching transistor, a rectifier and filter circuit, and a load. The transformer includes a primary winding and a secondary winding, the number of turns of the primary winding is N1, and the primary winding is divided into n sections by leading out n?1 taps in a specific manner; anodes of the n diodes are respectively connected to n input sources in turn, cathodes of the n diodes are respectively connected to a first terminal of the primary winding and n?1 tap terminals in turn, a second terminal of the primary winding is grounded through the switching transistor, and the secondary winding delivers energy to the rectifier and filter circuit and then to the load.