Abstract: A method for preparing a supported two-component metal oxide ozone catalytic oxidation catalyst for an advanced treatment of a petrochemical wastewater is provided. The supported two-component metal-oxide ozone catalytic oxidation catalyst is prepared from commercially-available active alumina balls by the steps of carrier activation, impregnating liquid preparation, carrier impregnation, catalyst roasting, and catalyst cleaning. The supported two-component metal oxide ozone catalytic oxidation catalyst has product stability, is reusable, and is of significance in application of ozone catalytic oxidation technologies as well as energy conservation and consumption reduction for petrochemical wastewater treatment plants.

Abstract: A method for preparing a supported two-component metal oxide ozone catalytic oxidation catalyst for an advanced treatment of a petrochemical wastewater is provided. The supported two-component metal-oxide ozone catalytic oxidation catalyst is prepared from commercially-available active alumina balls by the steps of carrier activation, impregnating liquid preparation, carrier impregnation, catalyst roasting, and catalyst cleaning. The supported two-component metal oxide ozone catalytic oxidation catalyst has product stability, is reusable, and is of significance in application of ozone catalytic oxidation technologies as well as energy conservation and consumption reduction for petrochemical wastewater treatment plants.

Abstract: A semiconductor device and method of fabricating the device are provided, the method including providing an insulating layer, wherein the insulating layer covers an active region and a gate of at least one semiconductor device; forming connection holes to the active region in the insulating layer to expose at least part of the active region, wherein the connection holes include a first portion of a first width and a second portion of a second width, the first portion of the connection holes being adjacent to the active region, and the first width being less than the second width; filling the connection holes with a metal material to form the contacts to the active region. As such, contacts formed for the active region also include a first portion of a first width and a second portion of a second width.

Abstract: A semiconductor device and method of fabricating the device are provided, the method including providing an insulating layer, wherein the insulating layer covers an active region and a gate of at least one semiconductor device; forming connection holes to the active region in the insulating layer to expose at least part of the active region, wherein the connection holes include a first portion of a first width and a second portion of a second width, the first portion of the connection holes being adjacent to the active region, and the first width being less than the second width; filling the connection holes with a metal material to form the contacts to the active region. As such, contacts formed for the active region also include a first portion of a first width and a second portion of a second width.