Patents by Inventor Liyan HUO

Liyan HUO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor wafer and method for manufacturing semiconductor wafer thereof
    Patent number: 11328924
    Abstract: Provided is a method for manufacturing a semiconductor wafer and a semiconductor wafer. The method includes: disposing a sacrificial layer on a first surface and a second surface of a patterned substrate, the patterned substrate comprising the first surface and the second surface having different normal directions; exposing the first surface by removing the first portion of the sacrificial layer disposed on the first surface; growing an original nitride buffer layer on the first surface and the second portion of the sacrificial layer; partially lifting off the second portion of the sacrificial layer disposed on the second surface such that at least one sub-portion of the second portion of the sacrificial layer remains on the second surface of the patterned substrate; and growing an epitaxial layer on the original nitride buffer layer, where a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: May 10, 2022
    Assignee: Xiamen Changelight Co., Ltd.
    Inventors: Kaixuan Chen, Zhiwei Lin, Liyan Huo, Xiangjing Zhuo, Gang Yao, Aimin Wang
  • SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER THEREOF
    Publication number: 20200219715
    Abstract: Provided is a method for manufacturing a semiconductor wafer and a semiconductor wafer. The method includes: disposing a sacrificial layer on a first surface and a second surface of a patterned substrate, the patterned substrate comprising the first surface and the second surface having different normal directions; exposing the first surface by removing the first portion of the sacrificial layer disposed on the first surface; growing an original nitride buffer layer on the first surface and the second portion of the sacrificial layer; partially lifting off the second portion of the sacrificial layer disposed on the second surface such that at least one sub-portion of the second portion of the sacrificial layer remains on the second surface of the patterned substrate; and growing an epitaxial layer on the original nitride buffer layer, where a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate.
    Type: Application
    Filed: March 20, 2020
    Publication date: July 9, 2020
    Applicant: Xiamen Changelight Co. Ltd.
    Inventors: Kaixuan CHEN, Zhiwei LIN, Liyan HUO, Xiangjing ZHUO, Gang YAO, Aimin WANG