Abstract: Embodiments of the present disclosure describe a method of fabricating a semiconducting material, comprising fixing a first substrate to a second substrate via a bonding material sufficient to form a two-substrate support with a cavity region, applying an organo-lead halide perovskite precursor solution to the cavity region of the two-substrate support, and annealing sufficient to form in the cavity region a semiconducting material including an organo-lead halide perovskite thin single crystal. Embodiments of the present disclosure further describe a transistor comprising a source terminal, a drain terminal, a channel layer extending between the source terminal and the drain terminal and including an organo-lead halide perovskite thin single crystal, a gate terminal, and an insulating layer separating the gate terminal from the source terminal, drain terminal, and channel layer sufficient to form a transistor.

Abstract: A method of manufacturing a patterned crystal structure for includes depositing an amorphous material. The amorphous material is modified such that a first portion of the amorphous thin-film layer has a first height/volume and a second portion of the amorphous thin-film layer has a second height/volume greater than the first portion. The amorphous material is annealed to induce crystallization, wherein crystallization is induced in the second portion first due to the greater height/volume of the second portion relative to the first portion to form patterned crystal structures.

Abstract: Embodiments of the present disclosure describe a method of fabricating a semiconducting material, comprising fixing a first substrate to a second substrate via a bonding material sufficient to form a two-substrate support with a cavity region, applying an organo-lead halide perovskite precursor solution to the cavity region of the two-substrate support, and annealing sufficient to form in the cavity region a semiconducting material including an organo-lead halide perovskite thin single crystal. Embodiments of the present disclosure further describe a transistor comprising a source terminal, a drain terminal, a channel layer extending between the source terminal and the drain terminal and including an organo-lead halide perovskite thin single crystal, a gate terminal, and an insulating layer separating the gate terminal from the source terminal, drain terminal, and channel layer sufficient to form a transistor.

Abstract: A method of manufacturing a patterned crystal structure for includes depositing an amorphous material. The amorphous material is modified such that a first portion of the amorphous thin-film layer has a first height/volume and a second portion of the amorphous thin-film layer has a second height/volume greater than the first portion. The amorphous material is annealed to induce crystallization, wherein crystallization is induced in the second portion first due to the greater height/volume of the second portion relative to the first portion to form patterned crystal structures.