Abstract: The present invention provides a method for growing ni-containing thin film with single atomic layer deposition technology, comprising steps of: A) placing a substrate in a reaction chamber, and under the vacuum condition, passing a gas-phase Ni source in a form of pulses into the reaction chamber for deposition to obtain a substrate deposited with the Ni source, the Ni source comprising a compound having a structure of Formula I; B) passing a gas-phase reducing agent in a form of pulses into the reaction chamber to reduce the Ni source deposited on the substrate, obtaining a substrate deposited with a Ni thin film. The application of the Ni source having a structure of Formula I in the single atomic layer deposition technology allows a Ni-containing deposition layer with good shape retention to be deposited and formed on a nano-sized semiconductor device.