Abstract: A manufacturing method of a thin film solar cell panel includes a step of providing an ultra-thin glass substrate, a step of depositing a first electrode, a photoelectric conversion layer and a second electrode sequentially on the ultra-thin glass substrate, a step of dividing the solar cell panel into a plurality of smaller cell units in series connection through laser scribing respectively after depositing, a step of performing a laser or chemical etching treatment on a cell structure of the solar cell panel, a step of disposing the gate electrode to form the thin film solar cell panel, and a step of performing a bending treatment on the solar cell panel. The manufacturing method of the bendable thin film solar cell panel is improved so as to avoid increase of additional costs, and to greatly increase general applicability onto various bendable thin film solar cell panels.

Abstract: The present invention provides a thin film solar cell panel and a manufacturing method thereof. The thin film solar cell panel comprises a substrate, a first electrode disposed on the substrate. The substrate is an ultra-thin glass substrate with a thickness of 0.1-1 mm. The ultra-thin glass substrate has a bending capacity, and a minimum bending radius thereof reaches below 10 cm. The first electrode is continuously disposed on the substrate during its formation. Light transmittance of the thin film solar cell panel of the present invention is enhanced, and the thin film solar cell panel can be conveniently used to manufacture a bending solar cell component.

Abstract: The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon wafer, wherein the n-type silicon wafer may be a monocrystal or polycrystal silicon wafer; depositing an amorphous silicon p layer on the first amorphous silicon intrinsic layer; depositing a first boron doped zinc oxide thin film on the amorphous silicon p layer; forming a back electrode and an Al-back surface field on the back of the n-type silicon wafer; and forming a positive electrode on the front of the silicon wafer. In addition, the present invention further discloses a method of fabricating a double-sided heterojunction battery. In the present invention, the boron doped zinc oxide is used as an anti-reflection film in place of an ITO thin film; due to the special nature, especially the light trapping effect of the boron doped zinc oxide, the boron doped zinc oxide can achieve good anti-reflection.

Abstract: The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon wafer, wherein the n-type silicon wafer may be a monocrystal or polycrystal silicon wafer; depositing an amorphous silicon p layer on the first amorphous silicon intrinsic layer; depositing a first boron doped zinc oxide thin film on the amorphous silicon p layer; forming a back electrode and an Al-back surface field on the back of the n-type silicon wafer; and forming a positive electrode on the front of the silicon wafer. In addition, the present invention further discloses a method of fabricating a double-sided heterojunction battery. In the present invention, the boron doped zinc oxide is used as an anti-reflection film in place of an ITO thin film; due to the special nature, especially the light trapping effect of the boron doped zinc oxide, the boron doped zinc oxide can achieve good anti-reflection.

Abstract: Provided among other things is a phosphor of the formula Sr1-x3Cax3Ga2S4:Eu:xGa2S3??(I) wherein x is 0 to about 0.2 (or about 0.0001 to about 0.2), wherein x3 is 0.0001 to 1, and wherein a minor part of the europium component is substituted with praseodymium in an efficiency enhancing amount.

Abstract: The present invention provides-a photoluminescent phosphor coated with a coating of oxide, the phosphor comprising (1) an inorganic phosphor chosen from (a) a metal thiogallate phosphor and (b) a metal sulfide phosphor and (2) a coating that comprises at least one layer having at least one oxides. The coated photoluminescent phosphor of the present invention is more resistant to water-induced degradation than when it is uncoated.

Abstract: A testing structure formed on a photonic integrated circuit including a plurality of first photonic components and having a given functionality corresponding to a given interconnectivity of the first photonic components, the testing structure including: at least one second photonic component being suitable for testing at least one of the first photonic components; and, at least one photonic pathway optically coupling the at least one first photonic component to the at least one second photonic component. The at least one photonic pathway is unique from the given interconnectivity.

Abstract: Provided among other things is a phosphor of the formula Sr1-x3Cax3Ga2S4:Eu:xGa2S3 ??(I) wherein x is 0 to about 0.2 (or about 0.0001 to about 0.2), wherein x3 is 0.0001 to 1, and wherein a minor part of the europium component is substituted with praseodymium in an efficiency enhancing amount.

Abstract: A method for photonically coupling to at least one active photonic device structure formed on a substrate, the method including: etching the active device structure with a high selectivity towards a crystallographic plane to form a sloped terminice with respect to the substrate; and, depositing at least one waveguide over the etched terminice and at least a portion of the substrate; wherein, the waveguide is photonically coupled to the etched active device structure to provide photonic interconnectivity for the etched active device structure.

Abstract: A photonic device suitable for being optically coupled to at least one optical fiber having a first spot-size, the device including: at least one photonic component; and, a graded index lens optically coupled between the at least one photonic component and the at least one optical fiber; wherein, the graded index lens is adapted to convert optical transmissions from the at least one photonic component to the first spot size.

Abstract: A photonic integrated circuit including: at least first and second optical waveguides, wherein the second of the optical waveguides at least partially overlies the first of the optical waveguides; and, an inkjet deposited layer forming a sufficiently smooth profile elevating the second of the optical waveguides with respect to the first of the optical waveguides where they at least partially overlie so as to at least partially mitigate losses in optical signals traversing at least one of the first and second optical waveguides otherwise due to the second optical waveguide at least partially overlying the first optical waveguide.

Abstract: A photonic integrated circuit including: at least one photonic component being suitable for operation with a plurality of photons and including an operational material having a bandgap energy close to the energy of the photons; and, at least one photonic component being suitable for operation with the plurality of photons, including an operational material having a bandgap energy substantially higher than the photons and being adjacent to the at least one photonic component including an operational material having a bandgap energy close to the energy of the photons. The at least one photonic component including an operational material having a bandgap energy substantially higher than the photons includes at least one amorphous silicon based alloy material.

Abstract: The present invention is an integrated optical switch, comprising a switching element and an optical detector in communication with the switching element. The integrated optical switch includes an optical detector of amorphous semiconductor material on a semiconductor waveguide. Optical header information is detected and interpreted, and the switch is operated according to the header information.

Abstract: A testing structure formed on a photonic integrated circuit including a plurality of first photonic components and having a given functionality corresponding to a given interconnectivity of the first photonic components, the testing structure including: at least one second photonic component being suitable for testing at least one of the first photonic components; and, at least one photonic pathway optically coupling the at least one first photonic component to the at least one second photonic component. The at least one photonic pathway is unique from the given interconnectivity.

Abstract: A testing structure formed on a photonic integrated circuit including a plurality of first photonic components and having a given functionality corresponding to a given interconnectivity of the first photonic components, the testing structure including: at least one second photonic component being suitable for testing at least one of the first photonic components; and, at least one photonic pathway optically coupling the at least one first photonic component to the at least one second photonic component. The at least one photonic pathway is unique from the given interconnectivity.

Abstract: A photonic device including: at least first and second optical waveguides; and, a buffer at least partially interposed between the first and second optical waveguides where they at least partially overlie one-another so as to at least partially mitigate interference between optical signals traversing the first and second optical waveguides.

Abstract: A color cathode-ray tube (CRT) has an evacuated envelope with an electron gun therein for generating at least one electron beam. The envelope further includes a faceplate panel having a luminescent screen with phosphor elements on an interior surface thereof. A focus mask, having a plurality of spaced-apart first conductive strands, is located adjacent to an effective picture area of the screen. The spacing between the first conductive strands defines a plurality of apertures substantially parallel to the phosphor elements on the screen. Each of the first conductive strands has a substantially continuous insulating material layer formed on a screen facing side thereof. A plurality of second conductive wires are oriented substantially perpendicular to the plurality of first conductive strands and are bonded thereto by the insulating material layer. The insulating material layer is composed of a silicate material.

Abstract: A color cathode-ray tube (CRT) has an evacuated envelope with an electron gun therein for generating an electron beam. The envelope further includes a faceplate panel having a luminescent screen with phosphor elements on an interior surface thereof. A focus mask, having a plurality of spaced-apart first conductive strands, is located adjacent to an effective picture area of the screen. The spacing between the first conductive strands defines a plurality of apertures substantially parallel to the phosphor elements on the screen. Each of the first conductive strands has a substantially continuous slightly conductive insulating material layer formed on a screen facing side thereof. A plurality of second conductive wires are oriented substantially perpendicular to the plurality of first conductive strands and are bonded thereto by the slightly conductive insulating material layer.

Abstract: A photonic device suitable for being optically coupled to at least one optical fiber having a first spot-size, the device including: at least one photonic component; and, a graded index lens optically coupled between the at least one photonic component and the at least one optical fiber; wherein, the graded index lens is adapted to convert optical transmissions from the at least one photonic component to the first spot size.

Abstract: A color cathode-ray tube (CRT) having an evacuated envelope with an electron gun therein for generating an electron beam is disclosed. The envelope further includes a faceplate panel having a luminescent screen with phosphor lines on an interior surface thereof. A focus mask, having a plurality of spaced-apart first conductive lines, is located adjacent to an effective picture area of the screen. The spacing between the first conductive lines defines a plurality of slots substantially parallel to the phosphor lines on the screen. Each of the first conductive lines has a substantially continuous insulating material layer formed on a screen facing side thereof. A plurality of second conductive lines are oriented substantially perpendicular to the plurality of first conductive lines and are bonded thereto by the insulating material layer. A cap layer is formed over the plurality of second conductive lines and the insulating material.