Abstract: The invention provides a graphene channel silicon carbide power semiconductor transistor, and its cellular structure thereof. Characterized in that, a graphene strip serving as a channel is embedded in a surface of the P-type body region and two ends of the graphene strip are respectively contacted with a boundary between the N+-type source region and the P-type body region and a boundary between the P-type body region and the N-type drift region, and the graphene strip is distributed in a cellular manner in a gate width direction, a conducting channel of a device is still made of graphene; in the case of maintaining basically invariable on-resistance and current transmission capacity, the P-type body regions are separated by the graphene strip, thus enhancing a function of assisting depletion, which further reduces an overall off-state leakage current of the device, and improves a breakdown voltage.

Abstract: The invention provides a graphene channel silicon carbide power semiconductor transistor, and its cellular structure thereof. Characterized in that, a graphene strip serving as a channel is embedded in a surface of the P-type body region and two ends of the graphene strip are respectively contacted with a boundary between the N+-type source region and the P-type body region and a boundary between the P-type body region and the N-type drift region, and the graphene strip is distributed in a cellular manner in a gate width direction, a conducting channel of a device is still made of graphene; in the case of maintaining basically invariable on-resistance and current transmission capacity, the P-type body regions are separated by the graphene strip, thus enhancing a function of assisting depletion, which further reduces an overall off-state leakage current of the device, and improves a breakdown voltage.

Abstract: The present disclosure provides a parameter design and numerical simulation method for jet trencher nozzle, comprising the following steps: S1. designing parameters of nozzle; S2. selecting the parameters of nozzle; S3. establishing a geometric model; S4. setting boundary conditions and delineating grids; S5. performing numerical simulation using Flow-3D; and S6. performing results processing and analysis. According to the present invention, the whole process of nozzle flushing and ground breaking can be simulated, the size of the cross-section of the flushing trench is measured, and by analyzing the obtained result, the reasonability of nozzle radius parameter design can be verified, and a certain reference is provided for design of inclination angle parameters.