Abstract: A semiconductor device includes a carrier generation layer disposed on a channel layer, a source contact and a drain contact disposed on the carrier generation layer, and a gate contact disposed between the source contact and the drain contact. The semiconductor device further includes a number N of conductive stripes disposed directly on the carrier generation layer in an area between the drain contact and the gate contact, and a number M of conductive transverse stripes disposed directly on the carrier generation layer in the area between the drain contact and the gate contact. Each of the N conductive stripes extends from and is electrically coupled to the drain contact. Each of the M conductive transverse stripes is aligned non-parallel to the N conductive stripes and is not in direct physical contact with the N conductive stripes.

Abstract: High-electron-mobility transistor (HEMT) devices are described in this patent application. In some implementations, the HEMT devices can include a back barrier hole injection structure. In some implementations, the HEMT devices include a conductive striped portion electrically coupled to a drain contact.

Abstract: High-electron-mobility transistor (HEMT) devices are described in this patent application. In some implementations, the HEMT devices can include a back barrier hole injection structure. In some implementations, the HEMT devices include a conductive striped portion electrically coupled to a drain contact.

Abstract: High-electron-mobility transistor (HEMT) devices are described in this patent application. In some implementations, the HEMT devices can include a back barrier hole injection structure. In some implementations, the HEMT devices include a conductive striped portion electrically coupled to a drain contact.