Abstract: High frequency power diode including a semiconductor wafer having first and second main sides, a first layer of a first conductivity type formed on the first main side, a second layer of a second conductivity type formed on the second main side and a third layer of the second conductivity type formed between the first layer and the second layer. The first layer has a dopant concentration decreasing from 1019 cm?3 or more adjacent to the first main side of the wafer to 1.5.1015 cm?3 or less at an interface of the first layer with the third layer. The second layer has a dopant concentration decreasing from 1019 cm?3 or more adjacent to the second main side of the wafer to 1.5.1015 cm?3 at an interface of the second layer with the third layer and the third layer has a dopant concentration of 1.5.1015 cm?3 or less.