Abstract: This invention relates in part to a method for cleaning an ion source component of an ion implanter used in semiconductor and microelectronic manufacturing. The ion source component includes an ionization chamber and one or more components contained within the ionization chamber. The interior of the ionization chamber and/or the one or more components contained within the ionization chamber have at least some deposits thereon of elements contained within a dopant gas, e.g., carborane (C2B10H12). The method involves introducing a cleaning gas into the ionization chamber, and reacting the cleaning gas with the deposits under conditions sufficient to remove at least a portion of the deposits from the interior of the ionization chamber and/or from the one or more components contained within the ionization chamber.

Abstract: This invention relates in part to a method for preparing a pressure vessel for receiving high purity acetylene at elevated pressure. The method involves providing a porous filler-containing pressure vessel, deep cleaning the porous filler-containing pressure vessel, purifying a solvent, and charging the purified solvent into the deep cleaned, porous filler-containing pressure vessel. The pressure vessel is then charged with high purity acetylene for storage, transport and/or delivery of the high purity acetylene. The high purity acetylene may be useful as a source material for depositing carbon and carbon-containing films in semiconductor applications.

Abstract: This invention is directed to a method for recovering, purifying and recycling an inert gas on a continual basis in connection with a silicon crystal pulling process. Silicon oxide impurities generated during the crystal growth process are completely oxidized by in-situ oxidation with a regulated amount of an oxidizing source gas mixture to form silicon dioxide impurities, which can be removed by a particulate removal device. The particulate-free effluent enters a purification unit to remove the remaining impurities. The inert gas emerging from the purification unit can be fed back into the crystal puller apparatus and/or mixed with the oxidizing source gas mixture. As a result, the ability to increase silicon crystal throughput, quality and at the same time reduce the costs associated with recycling the inert gas can be achieved.

Abstract: A novel composition, system and method thereof for improving beam current during silicon ion implantation are provided. The silicon ion implant process involves utilizing a first silicon-based co-species and a second species. The second species is selected to have an ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of an ion source utilized during generation and implantation of active silicon ions species. The active silicon ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated solely from SiF4.

Abstract: A novel composition, system and method thereof for improving beam current during silicon ion implantation are provided. The silicon ion implant process involves utilizing a first silicon-based co-species and a second species. The second species is selected to have an ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of an ion source utilized during generation and implantation of active silicon ions species. The active silicon ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated solely from SiF4.

Abstract: This invention is directed to a method for recovering, purifying and recycling an inert gas on a continual basis in connection with a silicon crystal pulling process. Silicon oxide impurities generated during the crystal growth process are completely oxidized by in-situ oxidation with a regulated amount of an oxidizing source gas mixture to form silicon dioxide impurities, which can be removed by a particulate removal device. The particulate-free effluent enters a purification unit to remove the remaining impurities. The inert gas emerging from the purification unit can be fed back into the crystal puller apparatus and/or mixed with the oxidizing source gas mixture. As a result, the ability to increase silicon crystal throughput, quality and at the same time reduce the costs associated with recycling the inert gas can be achieved.

Abstract: This invention relates in part to a process for producing high purity acetylene by withdrawing a crude acetylene stream from a storage source, and passing said stream through an adsorbent bed that contains layered adsorption media to selectively remove moisture, solvent and carbon dioxide from the stream, thereby producing the high purity acetylene. The adsorption media is regenerated in-situ. The high purity acetylene product is useful as a source material for depositing carbon and carbon-containing films in semiconductor applications.

Abstract: This invention relates in part to a method for preparing a pressure vessel for receiving high purity acetylene at elevated pressure. The method involves providing a porous filler-containing pressure vessel, deep cleaning the porous filler-containing pressure vessel, purifying a solvent, and charging the purified solvent into the deep cleaned, porous filler-containing pressure vessel. The pressure vessel is then charged with high purity acetylene for storage, transport and/or delivery of the high purity acetylene. The high purity acetylene may be useful as a source material for depositing carbon and carbon-containing films in semiconductor applications.

Abstract: The present invention relates to methods and systems for purifying gases, such as for example semiconductor process gases. The invention more particularly relates to fluid purification methods and systems having improved heat transfer capabilities and controls such that the purified fluid produced from the process contains reduced impurity levels and/or exhibits more uniform concentrations within the final product. In another aspect of the invention, the activation time for adsorbent beds used in such processes and systems can be reduced.

Abstract: This invention relates in part to a method for preparing a pressure vessel for receiving high purity acetylene at elevated pressure. The method involves providing a porous filler-containing pressure vessel, deep cleaning the porous filler-containing pressure vessel, purifying a solvent, and charging the purified solvent into the deep cleaned, porous filler-containing pressure vessel. The pressure vessel is then charged with high purity acetylene for storage, transport and/or delivery of the high purity acetylene. The high purity acetylene may be useful as a source material for depositing carbon and carbon-containing films in semiconductor applications.

Abstract: This invention is directed to various protocols for reprocessing off-spec gas to produce a concentration of off-spec gases to a desired target concentration. A combination of source gases is blended with the off-spec gas. This technique has the effect of enabling relatively small adjustments to the concentration of off-spec gas. Processes are also described that incorporate the blending protocols.

Abstract: This invention relates in part to a method for cleaning an ion source component of an ion implanter used in semiconductor and microelectronic manufacturing. The ion source component includes an ionization chamber and one or more components contained within the ionization chamber. The interior of the ionization chamber and/or the one or more components contained within the ionization chamber have at least some deposits thereon of elements contained within a dopant gas, e.g., carborane (C2B10H12). The method involves introducing a cleaning gas into the ionization chamber, and reacting the cleaning gas with the deposits under conditions sufficient to remove at least a portion of the deposits from the interior of the ionization chamber and/or from the one or more components contained within the ionization chamber.

Abstract: This invention relates in part to a process for producing high purity acetylene by withdrawing a crude acetylene stream from a storage source, and passing said stream through an adsorbent bed that contains layered adsorption media to selectively remove moisture, solvent and carbon dioxide from the stream, thereby producing the high purity acetylene. The adsorption media is regenerated in-situ. The high purity acetylene product is useful as a source material for depositing carbon and carbon-containing films in semiconductor applications.

Abstract: This invention relates in part to a method for preparing a pressure vessel for receiving high purity acetylene at elevated pressure. The method involves providing a porous filler-containing pressure vessel, deep cleaning the porous filler-containing pressure vessel, purifying a solvent, and charging the purified solvent into the deep cleaned, porous filler-containing pressure vessel. The pressure vessel is then charged with high purity acetylene for storage, transport and/or delivery of the high purity acetylene. The high purity acetylene may be useful as a source material for depositing carbon and carbon-containing films in semiconductor applications.

Abstract: The present invention relates to methods and systems for purifying gases, such as for example semiconductor process gases. The invention more particularly relates to fluid purification methods and systems having improved heat transfer capabilities and controls such that the purified fluid produced from the process contains reduced impurity levels and/or exhibits more uniform concentrations within the final product. In another aspect of the invention, the activation time for adsorbent beds used in such processes and systems can be reduced.

Abstract: The present invention relates to methods and systems for purifying gases, such as for example semiconductor process gases. The invention more particularly relates to fluid purification methods and systems having improved heat transfer capabilities and controls such that the purified fluid produced from the process contains reduced impurity levels and/or exhibits more uniform concentrations within the final product. In another aspect of the invention, the activation time for adsorbent beds used in such processes and systems can be reduced.

Abstract: A high pressure storage and delivery system having a fail-safe vacuum actuated valve is provided. In particular, through the innovative design of the vacuum actuated check valve, the system can accommodate up to three times the volume of product in similar size cylinders.

Abstract: The present invention relates to methods and systems for purifying gases, such as for example semiconductor process gases. The invention more particularly relates to fluid purification methods and systems having improved heat transfer capabilities and controls such that the purified fluid produced from the process contains reduced impurity levels and/or exhibits more uniform concentrations within the final product. In another aspect of the invention, the activation time for adsorbent beds used in such processes and systems can be reduced.

Abstract: A high pressure storage and delivery system having a fail-safe vacuum actuated valve is provided. In particular, through the innovative design of the vacuum actuated check valve, the system can accommodate up to three times the volume of product in similar size cylinders.