Abstract: An imaging array of the charge transfer type having improved sensitivity is disclosed. The array includes a plurality of substantially parallel charge transfer channels with channel stops therebetween which extend a distance into a semiconductor body. At least some of the channel stops have blooming drains therein for the removal of excess photogenerated charge. The improvement comprises potential barrier means which constrain electrical charge generated by absorption of light in the body to flow into the channels while preventing the loss of such charge by direct flow to the blooming drains. Potential barrier means include buried barrier regions extending a further distance into the body from those channel stops having blooming drain regions therein.The invention also includes an improved method of forming this array wherein the improvement comprises forming buried barrier regions containing a greater concentration of conductivity modifiers than the channel stops after the blooming drains are formed.

Abstract: An imaging array of the charge transfer type having improved sensitivity is disclosed. The array includes a plurality of substantially parallel charge transfer channels with channel stops therebetween which extend a distance into a semiconductor body. At least some of the channel stops have blooming drains therein for the removal of excess photogenerated charge. The improvement comprises potential barrier means which constrain electrical charge generated by absorption of light in the body to flow into the channels while preventing the loss of such charge by direct flow to the blooming drains. Potential barrier means include buried barrier regions extending a further distance into the body from those channel stops having blooming drain regions therein.

Abstract: The present invention relates to a method of forming a frame transfer CCD imager having in a substrate of single crystalline silicon of one conductivity type a plurality of parallel channels of the opposite conductivity type extending along a surface of the substrate, channel stop regions between the channels, blooming drains within the channel stop regions and potential barrier region beneath each blooming drain. The method includes forming on the surface of the substrate a first masking layer of silicon oxide and a second masking layer of a photoresist over the first masking layer. Aligned openings are formed in the first and second masking layers with the openings in the first masking layer having sides which taper back under the second masking layer. Ions of a desired conductivity modifier are implanted into the substrate through the aligned openings to form the blooming drains.

Abstract: The preferred embodiment of a method of making a buried channel CCD starts with a body of P type semiconductor material over which an oxide layer and a photoresist are deposited. Openings are formed to expose regions of the body surface where drains are to be formed and N type impurity atoms are implanted through the openings. The openings are then enlarged to expose an additional area of the surface surrounding the drains and P type atoms are implanted through the enlarged openings to form channel stops. Afterward, the surface of the body is exposed and N type atoms are implanted to form buried channel regions on each side of the channel stops and to convert a thin layer of the channel stops to lightly doped compensation regions extending between the drains and the buried channel regions.

Abstract: An image sensing device includes a wafer having a first input sensing surface region and a second charge storage surface region. A recombination layer extends along the first surface and is spaced therefrom. The method for forming the recombination layer is also disclosed.

Abstract: An image sensing device includes a wafer having a first input sensing surface region and a second charge storage surface region. A recombination layer extends along the first surface and is spaced therefrom. The method for forming the recombination layer is also disclosed.

Abstract: A target for vidicons and image intensifier tubes include a potential barrier less than about 1500 A from an input signal sensing surface. The targets also include various passivation means for stabilizing the energy level configuration along the input signal sensing surface by substantially fixing the valence or conduction band along that surface relative to the Fermi level.