Patents by Inventor Lo Foo

Lo Foo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TRIGGERED SILICON CONTROLLED RECTIFIER FOR RF ESD PROTECTION
    Publication number: 20080001168
    Abstract: An ESD protection circuit is formed at the input/output interface contact of an integrated circuit to protect the integrated circuit from damage caused by an ESD event. The ESD protection circuit has a polysilicon bounded SCR connected between a signal input/output interface contact of the integrated circuit and a power supply connection of the integrated circuit and a biasing circuit. The biasing circuit is connected to the polysilicon bounded SCR to bias the polysilicon bounded SCR to turn on more rapidly during the ESD event. The biasing circuit is formed by at least one polysilicon bounded diode and a first resistance. Other embodiments of the biasing circuit include a resistor/capacitor biasing circuit and a second diode triggering biasing circuit.
    Type: Application
    Filed: September 12, 2007
    Publication date: January 3, 2008
    Applicants: CHARTERED SEMICONDUCTOR MANUFACTURING LTD., Agilent Technologies, Inc.
    Inventors: Indrajit Manna, Lo Foo, Tan Ya, Raymond Filippi
  • Triggered silicon controlled rectifier for RF ESD protection
    Publication number: 20050173727
    Abstract: An ESD protection circuit is formed at the input/output interface contact of an integrated circuit to protect the integrated circuit from damage caused by an ESD event. The ESD protection circuit has a polysilicon bounded SCR connected between a signal input/output interface contact of the integrated circuit and a power supply connection of the integrated circuit and a biasing circuit. The biasing circuit is connected to the polysilicon bounded SCR to bias the polysilicon bounded SCR to turn on more rapidly during the ESD event. The biasing circuit is formed by at least one polysilicon bounded diode and a first resistance. Other embodiments of the biasing circuit include a resistor/capacitor biasing circuit and a second diode triggering biasing circuit.
    Type: Application
    Filed: February 11, 2004
    Publication date: August 11, 2005
    Inventors: Indrajit Manna, Lo Foo, Tan Ya, Raymond Filippi