Abstract: The present disclosure relates to a voltage converter formed on a GaN-coated substrate, comprising: a first chip including a first e-mode transistor and a first control circuit for the first transistor; and a second chip including a second transistor e-mode and a second control circuit of the second transistor, and being suitable for forwarding the first voltage received from a third control circuit to the second chip; wherein the second chip includes a voltage converter suitable for converting the first voltage into a second voltage, the voltage converter including a first current source used when an output voltage of the converter is below a threshold voltage, and a second current source used when the output voltage is above the threshold voltage.

Abstract: The present disclosure relates to a pulse width modulation circuit of a switched-mode power supply formed in and on a monolithic semiconductor substrate with a face coated with a gallium nitride layer, said circuit being adapted to control a power transistor of said switched-mode power supply.

Abstract: The present disclosure concerns a driver of a first e-mode type HEMT power transistor adapted to receiving a maximum voltage of 650 V between its drain and its source, the circuit being formed inside and on top of a monolithic semiconductor substrate having a surface covered with a gallium nitride layer, and comprising at least a second e-mode type transistor adapted to directly transmitting a control voltage to the gate of the first transistor and having an area greater than 5 mm2.

Abstract: The present disclosure concerns overtemperature protection circuit formed inside and on top of a monolithic semiconductor substrate having a surface covered with a gallium nitride layer, comprising: a first resistor having a first positive temperature coefficient and being arranged in said gallium nitride layer; and a second resistor having a second temperature coefficient different from the first coefficient.

Abstract: The present disclosure concerns an electronic device formed inside and on top of a monolithic semiconductor substrate having a surface covered with a gallium nitride layer, comprising at least one e-mode type HEMT power transistor adapted to receiving a maximum voltage of 650 V between its drain and its source, and an analog circuit for controlling said power transistor.

Abstract: The present disclosure concerns a voltage regulation circuit formed inside and on top of a monolithic semiconductor substrate having a surface covered with a gallium nitride layer, comprising: between a first terminal and a second terminal, a first resistor and a first d-mode type HEMT transistor; and between the first terminal and the third terminal, a second d-mode type HEMT transistor; wherein the midpoint between the first resistor and the first transistor is coupled to the gates of the first and second transistors.

Abstract: A driver and protection circuit for driving a power switch is disclosed. The driver and protection circuit includes a fault detection block configured to detect a discrepancy between a reference drive signal and a measured voltage at a gate of the power switch. The driver and protection circuit also includes a short circuit detection block configured to detect a gate-to-source short circuit or a gate-to-drain short circuit of the power switch. The driver and protection circuit further includes a latch coupled to the fault detection block and the short circuit detection block to selectively turn off an output driver coupled to the gate of the power switch when a fault or a short circuit is detected, and wherein the latch is configured to send a diagnostic signal when the fault or the short circuit is detected.

Abstract: A driver and protection circuit for driving a power switch is disclosed. The driver and protection circuit includes a fault detection block configured to detect a discrepancy between a reference drive signal and a measured voltage at a gate of the power switch. The driver and protection circuit also includes a short circuit detection block configured to detect a gate-to-source short circuit or a gate-to-drain short circuit of the power switch. The driver and protection circuit further includes a latch coupled to the fault detection block and the short circuit detection block to selectively turn off an output driver coupled to the gate of the power switch when a fault or a short circuit is detected, and wherein the latch is configured to send a diagnostic signal when the fault or the short circuit is detected.

Abstract: A driver and protection circuit for driving a power switch is disclosed. The driver and protection circuit includes a fault detection block configured to detect a discrepancy between a reference drive signal and a measured voltage at a gate of the power switch. The driver and protection circuit also includes a short circuit detection block configured to detect a gate-to-source short circuit or a gate-to-drain short circuit of the power switch. The driver and protection circuit further includes a latch coupled to the fault detection block and the short circuit detection block to selectively turn off an output driver coupled to the gate of the power switch when a fault or a short circuit is detected, and wherein the latch is configured to send a diagnostic signal when the fault or the short circuit is detected.

Abstract: A driver and protection circuit for driving a power switch is disclosed. The driver and protection circuit includes a fault detection block configured to detect a discrepancy between a reference drive signal and a measured voltage at a gate of the power switch. The driver and protection circuit also includes a short circuit detection block configured to detect a gate-to-source short circuit or a gate-to-drain short circuit of the power switch. The driver and protection circuit further includes a latch coupled to the fault detection block and the short circuit detection block to selectively turn off an output driver coupled to the gate of the power switch when a fault or a short circuit is detected, and wherein the latch is configured to send a diagnostic signal when the fault or the short circuit is detected.