Abstract: A method for transferring at least one chip, from a first support to a second support, includes forming, while the chip is assembled to the first support, an interlayer in the liquid state between, and in contact with, a front face of the chip and an assembly surface of a face of the second support and a solidification of the interlayer. Then, the chip is detached from the first support while maintaining the interlayer in the solid state.

Abstract: A method of preparation of a first surface of an electronic component, the first surface being intended to be bonded to another electronic component by a direct bonding and the first surface having previously been submitted to a surface treatment in an atmosphere including nitrogen, for example, a treatment in a nitrogen plasma or an ozone UV treatment, the preparation method including: placing into contact the first surface with an aqueous solution including at least 90% water, for a contacting duration longer than or equal to 30 minutes; and then drying the first surface.

Abstract: A process for bonding chips to a substrate by direct bonding includes providing a support with which the chips are in contact, the chips in contact with the support being separate from one another. This bonding process also includes forming a liquid film on one face of the substrate, bringing the chips into contact with the liquid film, where the action of bringing the chips into contact with the liquid film causes attraction of the chips toward the substrate, and evaporating the liquid film in order to bond the chips to the substrate by direct bonding.

Abstract: A method for transferring at least one chip, from a first support to a second support, includes forming, while the chip is assembled to the first support, an interlayer in the liquid state between, and in contact with, a front face of the chip and an assembly surface of a face of the second support and a solidification of the interlayer. Then, the chip is detached from the first support while maintaining the interlayer in the solid state.

Abstract: A method for direct bonding an electronic chip onto a substrate or another electronic chip, the method including: carrying out a hydrophilic treatment of a portion of, a surface of the electronic chip and of a portion of a surface of the substrate or of the other electronic chip; depositing an aqueous fluid on the portion of the surface of the substrate or of the second electronic chip; depositing the portion of the surface of the electronic chip on the aqueous fluid; drying the aqueous fluid until the portion of the surface of the electronic chip is rigidly connected to the portion of the surface of the substrate or of the other electronic chip: and during at least part of the drying of the aqueous fluid, emitting ultrasound into the aqueous fluid through the substrate or the other electronic chip.

Abstract: A method for direct bonding an electronic chip onto a substrate or another electronic chip, the method including: carrying out a hydrophilic treatment of a portion of, a surface of the electronic chip and of a portion of a surface of the substrate or of the other electronic chip; depositing an aqueous fluid on the portion of the surface of the substrate or of the second electronic chip; depositing the portion of the surface of the electronic chip on the aqueous fluid; drying the aqueous fluid until the portion of the surface of the electronic chip is rigidly connected to the portion of the surface of the substrate or of the other electronic chip: and during at least part of the drying of the aqueous fluid, emitting ultrasound into the aqueous fluid through the substrate or the other electronic chip.

Abstract: A method for capillary self-assembly of a plate and a carrier, including: forming an etching mask on a region of a substrate; reactive-ion etching the substrate, the etching using a series of cycles each including isotropic etching followed by surface passivation, wherein a duration of the isotropic etching for each cycle increases from one cycle to another, a ratio between durations of the passivation and etching of each cycle is lower than a ratio for carrying out a vertical anisotropic etching to form a carrier having an upper surface defined by the region and side walls defining an acute angle with the upper surface; removing the etching mask; placing a droplet on the upper surface of the carrier; and placing the plate on the droplet.

Abstract: A system is provided for individually supporting at least one component having opposing front and back faces, including a supporting device having a plurality of cells each delimited by a wall and having a contact zone to support the component, at least a part of the cells each receiving a component by its front face, the supporting and contact zones are configured so a surface of the front face is not in contact with the wall, the contact zone is located on a periphery of the front face and forms a closed zone around the front face, the supporting zone forms a closed zone on the wall, and the contact zone includes an edge surface set back in a thickness direction with respect to the front face, the thickness direction extending from the front to the back face perpendicular to at least one of the faces.

Abstract: A method for capillary self-assembly of a plate and a carrier, including: forming an etching mask on a region of a substrate; reactive-ion etching the substrate, the etching using a series of cycles each including isotropic etching followed by surface passivation, wherein a duration of the isotropic etching for each cycle increases from one cycle to another, a ratio between durations of the passivation and etching of each cycle is lower than a ratio for carrying out a vertical anisotropic etching to form a carrier having an upper surface defined by the region and side walls defining an acute angle with the upper surface; removing the etching mask; placing a droplet on the upper surface of the carrier; and placing the plate on the droplet.

Abstract: A method for producing at least one pad assembly (32, 50) on a support (19, 43) for use in a method for self-assembling at least one element (10) on the support (19, 43), comprises fanning, on the support (19, 43), a layer (28, 48) of at least one fluorinated material around the location (30, 44) of the pad assembly (32, 50), the layer (28, 48) having a thickness greater than 10 nm. The layer (28, 48) and the location (30, 44) are exposed to an ultraviolet treatment in the presence of ozone to form the pad assembly (32, 50) at said location (30, 44), wherein a drop of liquid (16) having a static contact angle on the pad assembly (32, 50) less than or equal to 15°, after the exposure to the ultraviolet treatment, has a static contact angle on the layer (28, 48) greater than or equal to 100°.

Abstract: A method for producing at least one pad assembly (32, 50) on a support (19, 43) for use in a method for self-assembling at least one element (10) on the support (19, 43), comprises fanning, on the support (19, 43), a layer (28, 48) of at least one fluorinated material around the location (30, 44) of the pad assembly (32, 50), the layer (28, 48) having a thickness greater than 10 nm. The layer (28, 48) and the location (30, 44) are exposed to an ultraviolet treatment in the presence of ozone to form the pad assembly (32, 50) at said location (30, 44), wherein a drop of liquid (16) having a static contact angle on the pad assembly (32, 50) less than or equal to 15°, after the exposure to the ultraviolet treatment, has a static contact angle on the layer (28, 48) greater than or equal to 100°.

Abstract: The invention relates to a system for individually supporting components (20), comprising at least one component (20) each comprising a front face (21) and a back face (22) opposite the front face (21), and a supporting device comprising a member (40) supporting said components (20), characterized in that the supporting member (40) is provided with cells (2) each one being delimited by a wall, with at least a part of the cells (41) each receiving a component (20) by the front face (21) thereof, with the cells (41) including a zone supporting a contact zone of the component (20), with the supporting zone and the contact zone being so configured that the surface of the front face (21) of the component (20) is not in contact with the wall of the cell (41).

Abstract: The invention relates to a method for detecting defects, more particularly emergent dislocations of an element having at least one crystalline germanium-base superficial layer. The method comprises an annealing step of the element in an atmosphere having a base that is a mixture of at least an oxidizing gas and a neutral gas enabling selective oxidizing of the emergent dislocations of the crystalline germanium-base superficial layer.

Abstract: A method of monitoring a heat treatment of a microtechnological substrate includes placement of the substrate to be treated in a heating zone and applying a heat treatment to the substrate, under predetermined temperature conditions, while monitoring the change over the course of time in the vibratory state of the substrate, and detecting a fracture in the substrate by detecting a peak characteristic in the vibratory state over the course of time.

Abstract: A method for fabricating semiconductor on insulator wafers by providing a semiconductor substrate or a substrate that includes an epitaxial semiconductor layer as a source substrate, attaching the source substrate to a handle substrate to form a source handle assembly and detaching the source substrate at a predetermined splitting area provided inside the source substrate and being essentially parallel to its main surface, to remove a layer from the source handle assembly to thereby create the semiconductor on insulator wafer. A diffusion barrier layer, in particular, an oxygen diffusion barrier layer can be provided on the source substrate. In addition the invention relates to the corresponding semiconductor on insulator wafers that are produced by the method.

Abstract: The invention relates to a method for detecting defects, more particularly emergent dislocations of an element having at least one crystalline germanium-base superficial layer. The method comprises an annealing step of the element in an atmosphere having a base that is a mixture of at least an oxidizing gas and a neutral gas enabling selective oxidizing of the emergent dislocations of the crystalline germanium-base superficial layer.

Abstract: A method of monitoring a heat treatment of a microtechnological substrate includes placement of the substrate to be treated in a heating zone and applying a heat treatment to the substrate, under predetermined temperature conditions, while monitoring the change over the course of time in the vibratory state of the substrate, and detecting a fracture in the substrate by detecting a peak characteristic in the vibratory state over the course of time.

Abstract: A method for fabricating semiconductor on insulator wafers by providing a semiconductor substrate or a substrate that includes an epitaxial semiconductor layer as a source substrate, attaching the source substrate to a handle substrate to form a source handle assembly and detaching the source substrate at a predetermined splitting area provided inside the source substrate and being essentially parallel to its main surface, to remove a layer from the source handle assembly to thereby create the semiconductor on insulator wafer. A diffusion barrier layer, in particular, an oxygen diffusion barrier layer can be provided on the source substrate. In addition the invention relates to the corresponding semiconductor on insulator wafers that are produced by the method.