Abstract: The present invention is related to a method for forming a metal silicide layer on a textured silicon substrate surface. The method includes providing a metal layer on a textured silicon substrate and performing a pulsed laser annealing step providing at least one UV laser pulse with a laser fluence in the range between 0.1 J/cm2 and 1.5 J/cm2 and with a laser pulse duration in the range between 1 ns and 10 ms. Then, the method includes converting at least part of the metal layer into a metal silicide layer. In addition, the present invention is related to the use of such a method in a process for fabricating a photovoltaic cell, wherein the dielectric layer is a surface passivation layer, or wherein the dielectric layer is an antireflection coating.

Abstract: A photovoltaic (PV) cell comprises a base substrate comprising silicon and including an upper doped region. A coating layer is disposed on the upper doped region and has an outer surface. Fingers are disposed in the coating layer. Each finger has a lower portion in electrical contact with the upper doped region, and an upper portion extending outwardly through the outer surface. Each finger comprises a first metal. A busbar is spaced from the upper doped region, which is free of physical contact with the busbar. The busbar is in electrical contact with the upper portions of the fingers. The busbar comprises a second metal and a third metal different from the first and second metals. The third metal has a melting temperature of no greater than about 300° C. A method of forming the PV cell is also provided.

Abstract: The present invention is related to a method for forming a metal silicide layer on a textured silicon substrate surface. The method includes providing a metal layer on a textured silicon substrate and performing a pulsed laser annealing step providing at least one UV laser pulse with a laser fluence in the range between 0.1 J/cm2 and 1.5 J/cm2 and with a laser pulse duration in the range between 1 ns and 10 ms. Then, the method includes converting at least part of the metal layer into a metal silicide layer. In addition, the present invention is related to the use of such a method in a process for fabricating a photovoltaic cell, wherein the dielectric layer is a surface passivation layer, or wherein the dielectric layer is an antireflection coating.