Patents by Inventor Loizes Efthymiou

Loizes Efthymiou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • III-V SEMICONDUCTOR DEVICE WITH INTEGRATED POWER TRANSISTOR AND START-UP CIRCUIT
    Publication number: 20220310832
    Abstract: We disclose a III-nitride semiconductor based heterojunction power device comprising: a first heterojunction transistor formed on a substrate (4) and a second heterojunction transistor formed on the substrate. The first heterojunction transistor comprises: first III-nitride semiconductor region formed over the substrate, wherein the first III-nitride semiconductor region comprises a first heterojunction comprising at least one two dimensional carrier gas; a first terminal (8) operatively connected to the first III-nitride semiconductor region; a second terminal (9) laterally spaced from the first terminal and operatively connected to the first III-nitride semiconductor region; and a first gate region (10) over the first III-nitride semiconductor region between the first and second terminals.
    Type: Application
    Filed: May 7, 2020
    Publication date: September 29, 2022
    Inventors: Florin UDREA, Loizes Efthymiou, Giorgia Longobardi, Martin Arnold