Patents by Inventor Lok Yi Lee

Lok Yi Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12265055
    Abstract: The present invention relates to a method of forming a material on a graphene layer structure 5 for injecting charge into, or extracting charge out of, the graphene layer structure 5, the method comprising: providing a graphene layer structure 5 having one or more first portions 25 on a non-metallic substrate 10, said one or more first portions 25 having one or more surface defects comprising excess out-of-plane material 15; plasma etching the one or more first portions 25 of the graphene layer structure 5 to remove the out-of-plane material 15; depositing a material 30 for injecting charge into, or extracting charge out of, the graphene layer structure 5 onto the one or more plasma-etched first portions 25.
    Type: Grant
    Filed: November 23, 2021
    Date of Patent: April 1, 2025
    Assignee: Paragraf Limited
    Inventors: Lok Yi Lee, Hugh Glass, Simon Thomas, Ivor Guiney
  • Publication number: 20240130248
    Abstract: A graphene Hall sensor for operation at cryogenic temperatures is provided. The graphene Hall sensor comprises a substrate, a graphene sheet, a dielectric layer, a first pair of electrical contacts, and a second pair of electrical contacts. The graphene sheet is provided on the substrate. The dielectric layer is provided on the graphene sheet. The graphene sheet and the dielectric layer share a continuous outer edge surface. The first pair of electrical contacts are in electrical contact with the graphene sheet and spaced apart along a first direction. The second pair of electrical contacts are in electrical contact with the graphene sheet and spaced apart along a second direction. The first direction is perpendicular to the second direction, wherein a path along the first direction between the first pair of electrical contacts crosses a path along the second direction between the second pair of electrical contacts. The graphene sheet has a sheet carrier density in the range of 2×1011 cm?2 to 1×1013 cm?2.
    Type: Application
    Filed: December 17, 2021
    Publication date: April 18, 2024
    Applicant: Paragraf Limited
    Inventors: Hugh Glass, Phillip David Biddulph, Rosie Baines, Lok Yi Lee
  • Publication number: 20240040937
    Abstract: There is provided a method 100 of producing an electronic device precursor 200, the method 100 comprising: (i) providing 105 a plasma-etchable layer structure 210 on a plasma-resistant substrate 205, wherein the layer structure 210 has an exposed upper surface; (ii) patterning 110 a plasma-resistant dielectric 215 onto the exposed upper surface to form an intermediate having at least one covered region and at least one uncovered region of the layer structure 210; (iii) subjecting the intermediate to plasma etching 115, whereby the at least one uncovered region of the layer structure 210 is etched away to form at least one covered region of the layer structure 210 having an exposed edge surface; (iv) forming 120 an ohmic contact 220a, 220b in direct contact with a portion of the exposed edge surface; wherein the plasma-etchable layer structure 210 comprises one or more graphene layers which extend across the covered regions of the layer structure 210 to the exposed edge surface.
    Type: Application
    Filed: December 17, 2021
    Publication date: February 1, 2024
    Applicant: Paragraf Limited
    Inventors: Rosie BAINES, Lok Yi LEE, Hugh GLASS
  • Publication number: 20220178872
    Abstract: The present invention relates to a method of forming a material on a graphene layer structure 5 for injecting charge into, or extracting charge out of, the graphene layer structure 5, the method comprising: providing a graphene layer structure 5 having one or more first portions 25 on a non-metallic substrate 10, said one or more first portions 25 having one or more surface defects comprising excess out-of-plane material 15; plasma etching the one or more first portions 25 of the graphene layer structure 5 to remove the out-of-plane material 15; depositing a material 30 for injecting charge into, or extracting charge out of, the graphene layer structure 5 onto the one or more plasma-etched first portions 25.
    Type: Application
    Filed: November 23, 2021
    Publication date: June 9, 2022
    Applicant: PARAGRAF LIMITED
    Inventors: Lok Yi Lee, Hugh Glass, Simon Thomas, Ivor Guiney