Patents by Inventor Long C. Pham

Long C. Pham has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
    Patent number: 7102924
    Abstract: Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.
    Type: Grant
    Filed: January 3, 2005
    Date of Patent: September 5, 2006
    Assignee: SanDisk Corporation
    Inventors: Jian Chen, Long C. Pham, Alexander K. Mak
  • Method and system for programming and inhibiting multi-level, non-volatile memory cells
    Patent number: 7095654
    Abstract: A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.
    Type: Grant
    Filed: September 9, 2005
    Date of Patent: August 22, 2006
    Assignee: SanDisk Corporation
    Inventors: Khandker N. Quader, Khanh T. Nguyen, Feng Pan, Long C. Pham, Alexander K. Mak
  • Method and system for programming and inhibiting multi-level, non-volatile memory cells
    Patent number: 6967872
    Abstract: A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: November 22, 2005
    Assignee: SanDisk Corporation
    Inventors: Khandker N. Quader, Khanh T. Nguyen, Feng Pan, Long C. Pham, Alexander K. Mak
  • Method and system for programming and inhibiting multi-level, non-volatile memory cells
    Patent number: 6944068
    Abstract: A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.
    Type: Grant
    Filed: March 24, 2004
    Date of Patent: September 13, 2005
    Assignee: SanDisk Corporation
    Inventors: Khandker N. Quader, Khanh T. Nguyen, Feng Pan, Long C. Pham, Alexander K. Mak
  • Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
    Patent number: 6847553
    Abstract: Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.
    Type: Grant
    Filed: February 3, 2003
    Date of Patent: January 25, 2005
    Assignee: SanDisk Corporation
    Inventors: Jian Chen, Long C. Pham, Alexander K. Mak
  • Method and system for programming and inhibiting multi-level, non-volatile memory cells
    Publication number: 20040179404
    Abstract: A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.
    Type: Application
    Filed: March 24, 2004
    Publication date: September 16, 2004
    Inventors: Khandker N. Quader, Khanh T. Nguyen, Feng Pan, Long C. Pham, Alexander K. Mak
  • Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
    Publication number: 20030137888
    Abstract: Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.
    Type: Application
    Filed: February 3, 2003
    Publication date: July 24, 2003
    Inventors: Jian Chen, Long C. Pham, Alexander K. Mak
  • Method and system for programming and inhibiting multi-level, non-volatile memory cells
    Publication number: 20030112663
    Abstract: A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.
    Type: Application
    Filed: December 18, 2001
    Publication date: June 19, 2003
    Inventors: Khandker N. Quader, Khanh T. Nguyen, Feng Pan, Long C. Pham, Alexander K. Mak
  • Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
    Patent number: 6542407
    Abstract: Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.
    Type: Grant
    Filed: January 18, 2002
    Date of Patent: April 1, 2003
    Assignee: SanDisk Corporation
    Inventors: Jian Chen, Long C. Pham, Alexander K. Mak