Abstract: The invention relates to the technical field of nuclear reactor materials, in particular to a processing method for improving the corrosion resistance of iron and steel materials in lead or lead-bismuth, comprising the following steps: selecting iron and steel materials containing Mn and Cr elements, using high-energy fast neutrons generated by fission as the radiation source, and performing irradiation on the iron and steel material so that Mn and Cr elements diffuse to the surface of the iron and steel material to form a dense oxide film, so as to complete the improvement of the corrosion resistance of the iron and steel material. The invention enhances the formation of the dense-structured oxide layer by irradiation. The oxide layer has good protection and self-healing properties in irradiation environment, and a new solution is proposed for enhancing the corrosion resistance of steel in lead and lead-bismuth coolant fast reactors.

Abstract: Described herein, inter alia, are compositions of PCNA modulators and methods for treating or preventing cancer.

Abstract: Described herein, inter alia, are compositions of PCNA modulators and methods for treating or preventing cancer.

Abstract: Described herein, inter alia, are compositions of PCNA modulators and methods for treating or preventing cancer.

Abstract: Described herein, inter alia, are compositions of PCNA modulators and methods for treating or preventing cancer.

Abstract: Described herein, inter alia, are compositions of PCNA modulators and methods for treating or preventing cancer.

Abstract: Described herein, inter alia, are compositions of PCNA modulators and methods for treating or preventing cancer.

Abstract: Described herein, inter alia, are compositions of PCNA modulators and methods for treating or preventing cancer.

Abstract: A method of controlling a threshold voltage is provided. The method of controlling a threshold voltage includes performing a film-thickness measuring step to measure the thickness of a film layer on a wafer to obtain a film-thickness value. Then, at least one parameter is decided, selected, or generated according to the film-thickness value. Next, an ion implantation process is performed on the wafer, wherein the ion implantation process is executed according to the parameter to form a threshold voltage adjustment region in the wafer below the film layer.

Abstract: A method for manufacturing the MIM capacitor structure is provided. A first damascene electrode layer is formed in the first opening formed in a first dielectric layer. An insulating barrier layer is formed to cover the first dielectric layer and the first damascene electrode layer. A second opening and a third opening are formed in the second dielectric layer formed on the insulating barrier layer. The second opening and the third opening are located above the first damascene electrode layer to expose a portion of the insulating barrier layer therefrom. The insulating barrier layer in the third opening is removed to expose a portion of the first damascene electrode layer. A second damascene electrode layer is formed in the second opening to be contacted with the insulating barrier layer and a dual damascene structure is formed in the third opening to be contacted with the first damascene electrode layer.

Abstract: A method of controlling a threshold voltage is provided. The method of controlling a threshold voltage includes performing a film-thickness measuring step to measure the thickness of a film layer on a wafer to obtain a film-thickness value. Then, at least one parameter is decided, selected, or generated according to the film-thickness value. Next, an ion implantation process is performed on the wafer, wherein the ion implantation process is executed according to the parameter to form a threshold voltage adjustment region in the wafer below the film layer.

Abstract: A metal-insulator-metal (MIM) capacitor structure includes a first dielectric layer, a first damascene electrode layer, an insulating barrier layer, a second dielectric layer and a second damascene electrode layer. The first damascene electrode layer is formed in the first dielectric layer. The insulating barrier layer covers the first dielectric layer and the first damascene electrode layer, and is a single layer structure. The second dielectric layer is formed on the insulating barrier layer. The second damascene electrode layer is formed in the second dielectric layer and is contacted with the insulating barrier layer. The MIM capacitor structure can includes a dual damascene structure formed in the second dielectric layer and the insulating barrier layer and electrically connected to the first damascene electrode layer. A method for manufacturing the MIM capacitor structure is also provided.

Abstract: A metal-insulator-metal (MIM) capacitor structure includes a first dielectric layer, a first damascene electrode layer, an insulating barrier layer, a second dielectric layer and a second damascene electrode layer. The first damascene electrode layer is formed in the first dielectric layer. The insulating barrier layer covers the first dielectric layer and the first damascene electrode layer, and is a single layer structure. The second dielectric layer is formed on the insulating barrier layer. The second damascene electrode layer is formed in the second dielectric layer and is contacted with the insulating barrier layer. The MIM capacitor structure can includes a dual damascene structure formed in the second dielectric layer and the insulating barrier layer and electrically connected to the first damascene electrode layer. A method for manufacturing the MIM capacitor structure is also provided.

Abstract: A molecular orbital computing device, method, program, and a recording medium recorded with the program, capable of computing electronic states at a high speed by an elongation method, are provided.