Abstract: A lens adapted to image a first image plane at a reduced side onto a magnified side is provided. The lens has an optical axis. The lens includes a lens group and a concave reflective mirror. The lens group is disposed in the light path between the reduced side and the magnified side. The concave reflective mirror is disposed in the light path between the lens group and the magnified side. The offset of the first image plane with respect to the optical axis is greater than 100%. The throw ratio of the lens is less than 0.3.

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

Abstract: A backlight module for a display includes a light source, a lens unit, a reflective unit and a prism. The light source provides a light beam. The light beam passes through the lens unit to be expanded, then transmits to the reflective unit and reflected to the prism. The light source may be a laser source.

Abstract: An illumination system includes a light source module, a chromaticity-adjusting light source and a light-combining element. The light source module provides a first color light beam, a second color light beam and a third color light beam. The chromaticity-adjusting light source provides a chromaticity-adjusting light beam. The light-combining element is disposed on the transmission paths of the chromaticity-adjusting light beam and the color light beams provided by the light source module to combine the color light beams with the chromaticity-adjusting light beam into an illumination beam.

Abstract: A method and system of automatic beam energy control. First, a substrate is provided. Next, hydrogen content of the substrate is measured to determine whether hydrogen content exceeds a critical hydrogen content limit. A warning is issued when hydrogen content exceeds a critical hydrogen content limit. Substrate thickness is measured when hydrogen content does not exceed a critical hydrogen content limit. A database comprising a plurality of beam energy values individually absorbed by substrates of different thicknesses is provided. An appropriate beam energy level corresponding to the measured thickness is provided by the database. Finally, beam energy is delivered to the substrate accordingly.

Abstract: The present invention provides a projector utilizing two projecting light beams to enhance the resolutions thereof and comprises a light source, a light valve, an ultrasonic medium, a piezoelectric material, and a high-frequency oscillator. The light source device is used for generating light beams to project onto the light valve to form imaging light beams. The ultrasonic medium is passed through the imaging light beams with an incident angle, the piezoelectric material is disposed on one end of the ultrasonic medium, and the high-frequency oscillator electrically connects to the piezoelectric material for generating ultrasonic waves. The ultrasonic waves from the piezoelectric material are delivered to the ultrasonic medium and the imaging light beams pass through the ultrasonic medium to form a diffraction light beam along a first direction and a transmission light beam along a second direction are produced in order to increase resolution of images projected from the projector.

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

Abstract: A method of inspecting the grain size of a polysilicon film. A substrate covered by an amorphous silicon layer is provided. Next, the amorphous silicon layer is annealed by a laser beam with a predetermined laser energy density to transfer it to a polysilicon layer. Thereafter, the polysilicon layer is measured by a spectrometer under a predetermined photon energy range to achieve an optical parameter. Finally, the optical parameter is quantized to achieve a determining index, thereby monitoring the grain size of the polysilicon layer.

Abstract: A method and system of automatic beam energy control. First, a substrate is provided. Next, hydrogen content of the substrate is measured to determine whether hydrogen content exceeds a critical hydrogen content limit. A warning is issued when hydrogen content exceeds a critical hydrogen content limit. Substrate thickness is measured when hydrogen content does not exceed a critical hydrogen content limit. A database comprising a plurality of beam energy values individually absorbed by substrates of different thicknesses is provided. An appropriate beam energy level corresponding to the measured thickness is provided by the database. Finally, beam energy is delivered to the substrate accordingly.

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

Abstract: A method for inspecting crystal quality of a polysilicon film. First, a substrate covered by a polysilicon layer is provided. Next, a probe light beam having a predetermined wavelength is irradiated through a beam splitter to separate into a first light beam and a second light beam, which is used for irradiating the polysilicon layer. Thereafter, the light intensity of the first light beam and the light intensity of the second light beam reflected from the polysilicon layer are detected to achieve a light intensity ratio. Finally, crystal quality of the polysilicon layer is monitored by the light intensity ratio. An apparatus for inspecting crystal quality of a polysilicon film and the method for controlling the same are also disclosed.

Abstract: A process for forming a polysilicon layer. First, an amorphous silicon layer is formed. Next, the amorphous silicon layer is pre-treated such that a surface of the amorphous silicon layer is oxidized to a silicon oxide layer or nitridized to a silicon nitride layer. Next, the amorphous silicon layer is crystallized to form a polysilicon layer. TFT fabricated by the present invention has smaller Vt and higher electron mobility.

Abstract: A method of inspecting the grain size of a polysilicon film. A substrate covered by an amorphous silicon layer is provided. Next, the amorphous silicon layer is annealed by a laser beam with a predetermined laser energy density to transfer it to a polysilicon layer. Thereafter, the polysilicon layer is measured by a spectrometer under a predetermined photon energy range to achieve an optical parameter. Finally, the optical parameter is quantized to achieve a determining index, thereby monitoring the grain size of the polysilicon layer.

Abstract: Zincselenide (ZnSe) thin films were grown on quartz glass and GaAs(100) substrates by continuous wave (CW) CO2 laser with ion beam assisted deposition. The ZnSe thin films are applied for multilayer anti-reflection coatings and blue light emitting devices. There are advantages to this technique over the Ion-Beam coating, MBE, MOCVD and PLD methods for fabricating layered semiconductors. It is cheaper and safer than Ion-Beam coating, MBE, MOCVD and others. It is cheaper and safer to heat the target locally by using a continuous wave laser so that contaminations and heat radiation are reduced. It is also cheaper and safer to avoid the splash of PLD.