Abstract: The present disclosure provides a method for automatically controlling material suction in a process of pulling-up of a monocrystal, including the steps of: obtaining a lifetime value and a resistivity of a pulled monocrystalline silicon rod; determining the lifetime value and a ratio of the lifetime value to the resistivity of the pulled monocrystalline silicon rod; if both the lifetime value and the ratio of the lifetime value to the resistivity are greater than set values, continuing to perform a re-feeding and pulling procedure; and if the lifetime value or/and the ratio of the lifetime value to the resistivity is less than or equal to the set values, performing a segment-taking and material suction procedure.

Abstract: An anti-cracking suction device for Czochralski single crystal is provided, wherein the device includes an outer cylinder, an inner cylinder disposed in the outer cylinder, a suction tube, and a first gap. An upper portion of the suction tube extends into the inner cylinder from a bottom of the outer cylinder, a lower portion of the suction tube is disposed outside the outer cylinder. The first gap is disposed between a bottom of the inner cylinder and the outer cylinder, and is configured to cushion a thermal expansion of the bottom of the inner cylinder to reduce stress at where the suction tube is connected with the inner cylinder, in a case that silicon liquid is sucked into the inner cylinder by the suction tube and accumulated at the bottom of the inner cylinder.

Abstract: A charging method of silicon material and a preparation method for single crystal are provided. The charging method includes: disposing the first material layer in the crucible; and disposing a second material layer on a side of the first material layer away from a bottom of the crucible, to cover the first material layer during vacuuming. The method for preparing a single crystal, using the silicon charging method described above. The preparation method for single crystal used the charging method for silicon material includes: covering a pot lid on the crucible to define a closed crucible body, and vacuuming the closed crucible body; lifting the closed crucible body into a single crystal furnace, and relieving pressure from the closed crucible body.

Abstract: A silicon powder forming method, a silicon block, and a use thereof are provided, which relates to technical field of single crystal growth. The silicon powder forming method according to the present application includes: placing a mold filled silicon powder in a condition for first pressure P1 for a first pressure time T1 to obtain a silicon block, wherein the first pressure P1 and the first pressure time T1 satisfy: 50 MPa?P1?600 MPa, 7 min?T1?15 min. By pressure control, the molded silicon block is easily removed from the mold without crushing dust. The silicon block obtained is easy to crush upon charging, and the particle size distribution of the crushed silicon block is easy to control, resulting in raising less. The silicon block obtained can be directly used for production of Czochralski single crystal, and the charge density is increased to 0.18 g/cm3˜0.25 g/cm3.

Abstract: A silicon powder molding method, a silicon block, and their applications in the field of single crystal growth technology are provided. The silicon powder molding method of this application includes the following steps: placing a mold filled with silicon powder under a first pressure P1 condition, maintaining the first pressure condition P1 for a continuous duration of a first pressure time T1, and satisfying 50 MPa?P1?600 MPa, 7 minutes ?T1?15 minutes to obtain a silicon block. A medium applying the first pressure P1 is a liquid. Through pressure control, the molded silicon block is easily removed from the mold without breaking and generating dust. The silicon block is easy to crush when filling and has a controllable particle size distribution after crushing. The silicon block can be directly used for the production of Czochralski grown single crystals, increasing a loading density to 0.18 g/cm3˜0.25 g/cm3.

Abstract: An anti-cracking suction device for Czochralski single crystal is provided, wherein the device includes an outer cylinder, an inner cylinder disposed in the outer cylinder, a suction tube, and a first gap. An upper portion of the suction tube extends into the inner cylinder from a bottom of the outer cylinder, a lower portion of the suction tube is disposed outside the outer cylinder. The first gap is disposed between a bottom of the inner cylinder and the outer cylinder, and is configured to cushion a thermal expansion of the bottom of the inner cylinder to reduce stress at where the suction tube is connected with the inner cylinder, in a case that silicon liquid is sucked into the inner cylinder by the suction tube and accumulated at the bottom of the inner cylinder.

Abstract: The present disclosure provides a method for automatically controlling material suction in a process of pulling-up of a monocrystal, including the steps of: obtaining a lifetime value and a resistivity of a pulled monocrystalline silicon rod; determining the lifetime value and a ratio of the lifetime value to the resistivity of the pulled monocrystalline silicon rod; if both the lifetime value and the ratio of the lifetime value to the resistivity are greater than set values, continuing to perform a re-feeding and pulling procedure; and if the lifetime value or/and the ratio of the lifetime value to the resistivity is less than or equal to the set values, performing a segment-taking and material suction procedure.