Abstract: A mask, a device and method for exposure are provided. The mask of the present disclosure includes: a first transparent region configured to allow light of a first wavelength to pass therethrough and filter out light of a second wavelength; and a second transparent region configured to allow the light of the second wavelength to pass therethrough, wherein the light of the second wavelength is light for exposure.

Abstract: The present disclosure provides a display substrate, including a base substrate, and a black matrix pattern and a color filter pattern on the base substrate. The black matrix pattern defines one or more display regions of the display substrate and a non-display region surrounding the one or more display regions. The color filter pattern includes a plurality of color filter sub-patterns, each color filter sub-pattern includes a plurality of color filter units, and each color filter unit includes a body portion. At least one of the color filter units further includes an anchoring portion extending from the body portion, and in a direction perpendicular to an extension direction of the body portion, the anchoring portion has a size greater than the body portion. The present disclosure further provides a method for manufacturing the display substrate, a display device and a mask.

Abstract: A plugging agent with temperature-resistant, salt-resistant and high-expansion for plugging large fractures and a preparation method thereof of the present disclosure are provided, the plugging agent system consists of the following components: main agent: 6%˜10%, cross-linking agent: 0.6%˜1%, initiator: 0.006%˜0.01%, additive: 6%˜14%, and the rest being water; the preparation method includes the following steps: adding montmorillonite to water to prepare a montmorillonite dispersion system; adding the main agent, the cross-linking agent and the initiator to the montmorillonite dispersion system to prepare a main agent solution; putting the main agent solution into an oven with a temperature range with 90˜20° C. for 9˜48 h to obtain gelation, the adhesive strength of the agent system can reach grade H, with 50˜80 expansion multiple, good strength after being expanded and good water plugging effect under the condition of a temperature of 140° C. and 250,000 degree of mineralization.

Abstract: The present disclosure provides a display substrate, including a base substrate, and a black matrix pattern and a color filter pattern on the base substrate. The black matrix pattern defines one or more display regions of the display substrate and a non-display region surrounding the one or more display regions. The color filter pattern includes a plurality of color filter sub-patterns, each color filter sub-pattern includes a plurality of color filter units, and each color filter unit includes a body portion. At least one of the color filter units further includes an anchoring portion extending from the body portion, and in a direction perpendicular to an extension direction of the body portion, the anchoring portion has a size greater than the body portion. The present disclosure further provides a method for manufacturing the display substrate, a display device and a mask.

Abstract: A mask, a device and method for exposure are provided. The mask of the present disclosure includes: a first transparent region configured to allow light of a first wavelength to pass therethrough and filter out light of a second wavelength; and a second transparent region configured to allow the light of the second wavelength to pass therethrough, wherein the light of the second wavelength is light for exposure.

Abstract: Disclosed is a method of manufacturing an organic semiconductor thin film for an organic thin film transistor from a blend of organic semiconductor/insulating polymer. The organic semiconductor thin film is configured such that organic semiconductor nanofibrils are dispersed in the form of a network in the insulating polymer layer. This organic semiconductor thin film is formed by dissolving the blend of organic semiconductor/insulating polymer in a marginal solvent of the organic semiconductor or mixed solvent thus preparing a blend solution, which is then applied while adjusting the solubility of the solution. An organic thin film transistor using the organic semiconductor thin film is also provided. The blend thin film of organic semiconductor/insulating polymer containing only about 3 wt % of the organic semiconductor exhibits electrical properties equal to those of a thin film composed exclusively of an organic semiconductor.

Abstract: Disclosed is a method of manufacturing an organic semiconductor thin film for an organic thin film transistor from a blend of organic semiconductor/insulating polymer. The organic semiconductor thin film is configured such that organic semiconductor nanofibrils are dispersed in the form of a network in the insulating polymer layer. This organic semiconductor thin film is formed by dissolving the blend of organic semiconductor/insulating polymer in a marginal solvent of the organic semiconductor or mixed solvent thus preparing a blend solution, which is then applied while adjusting the solubility of the solution. An organic thin film transistor using the organic semiconductor thin film is also provided. The blend thin film of organic semiconductor/insulating polymer containing only about 3 wt % of the organic semiconductor exhibits electrical properties equal to those of a thin film composed exclusively of an organic semiconductor.