Patents by Inventor Longbao XIN

Longbao XIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10090368
    Abstract: The present invention provides an array substrate and a manufacturing method thereof, and a display apparatus; and it relates to the field of display. The array substrate includes a first thin film transistor and a first electrode which are formed on a substrate. The first thin film transistor includes a gate, a gate insulating layer, an active layer, and an etch stop layer. The etch stop layer is formed with first via holes, and the etch stop layer and the gate insulating layer are formed with a second via hole at a position corresponding to the first electrode. A maximal diameter of the first via holes is not greater than a minimal diameter of the second via hole.
    Type: Grant
    Filed: February 27, 2015
    Date of Patent: October 2, 2018
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Jingang Fang, Longbao Xin, Hongda Sun
  • Patent number: 9887292
    Abstract: The present invention discloses an array substrate and a preparation method thereof, a display panel and a display device, so as to solve the problem that the performance of the oxide TFT may be reduced and even out of work due to relatively great shift of the threshold voltage of the oxide TFT since the water, oxygen and hydrogen groups may permeate to the active layer of the oxide TFT from the passivation layer above the oxide TFT.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: February 6, 2018
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Fengjuan Liu, Longbao Xin
  • Patent number: 9620648
    Abstract: The invention provides a thin film transistor, an array substrate and a display device. The thin film transistor comprises a conductive oxygen vacancy reducing layer for reducing oxygen vacancies in an active layer. The oxygen vacancy reducing layer is disposed between the active layer and a source and/or the active layer and a drain. With the oxygen vacancy reducing layer, the number of the oxygen vacancies in the active layer is decreased greatly, which improves transmission rate of carriers and simultaneously reduces value of subthreshold swing of the thin film transistor.
    Type: Grant
    Filed: November 28, 2014
    Date of Patent: April 11, 2017
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Meili Wang, Longbao Xin
  • Publication number: 20170040460
    Abstract: The present invention discloses an array substrate and a preparation method thereof, a display panel and a display device, so as to solve the problem that the performance of the oxide TFT may be reduced and even out of work due to relatively great shift of the threshold voltage of the oxide TFT since the water, oxygen and hydrogen groups may permeate to the active layer of the oxide TFT from the passivation layer above the oxide TFT.
    Type: Application
    Filed: August 20, 2015
    Publication date: February 9, 2017
    Inventors: Fengjuan LIU, Longbao XIN
  • Publication number: 20160358991
    Abstract: The present invention provides an array substrate and a manufacturing method thereof, and a display apparatus; and it relates to the field of display. The array substrate includes a first thin film transistor and a first electrode which are formed on a substrate. The first thin film transistor includes a gate, a gate insulating layer, an active layer, and an etch stop layer. The etch stop layer is formed with first via holes, and the etch stop layer and the gate insulating layer are formed with a second via hole at a position corresponding to the first electrode. A maximal diameter of the first via holes is not greater than a minimal diameter of the second via hole.
    Type: Application
    Filed: February 27, 2015
    Publication date: December 8, 2016
    Inventors: Jingang Fang, Longbao Xin, Hongda Sun
  • Publication number: 20160013319
    Abstract: The invention provides a thin film transistor, an array substrate and a display device. The thin film transistor comprises a conductive oxygen vacancy reducing layer for reducing oxygen vacancies in an active layer. The oxygen vacancy reducing layer is disposed between the active layer and a source and/or the active layer and a drain. With the oxygen vacancy reducing layer, the number of the oxygen vacancies in the active layer is decreased greatly, which improves transmission rate of carriers and simultaneously reduces value of subthreshold swing of the thin film transistor.
    Type: Application
    Filed: November 28, 2014
    Publication date: January 14, 2016
    Inventors: Meili WANG, Longbao XIN