Abstract: The present disclosure provides a quantum dot light-emitting diode (QLED) and a preparation method thereof. The QLED includes an anode and a cathode that are oppositely arranged, a quantum dot luminescent layer arranged between the anode and the cathode, and an electron transport layer (ETL) arranged between the quantum dot luminescent layer and the cathode. The ETL includes a first ETL, and the first ETL is a zinc oxide film with a surface hydroxyl content of less than or equal to 0.4. Alternatively, the ETL includes zinc oxide, and at least a part of a surface of the zinc oxide includes an amino ligand and/or a carboxyl ligand with 3 to 7 carbon atoms. In the present application, the QLED improves a service life of a QLED-based device effectively.

Abstract: The present application discloses a QLED and a preparation method thereof. The QLED comprises an anode and a cathode being oppositely arranged, a quantum dot luminescent layer arranged between the anode and cathode, and an ETL arranged between the quantum dot luminescent layer and the cathode. Where the ETL includes a first ETL, and the first ETL is a zinc oxide film with a surface hydroxyl content being greater than or equal to 0.6. Or alternatively, the ETL contains zinc oxide, and the surface of at least some of the zinc oxide contains amino ligands and/or carboxyl ligands with 8-18 carbon atoms. The QLED provided in the present application improves an external quantum efficiency of the QLED device effectively.

Abstract: The present application provides a composite material and a preparation method therefor, and a quantum dot light-emitting diode and a preparation method therefor, which relate to the field of display. The composite material comprises quantum dots and MXenes, metal atoms of the quantum dots are linked to surface groups of the MXenes by means of coordination bonds. An application of the composite material of the present application in a quantum dot light-emitting diode can increase the carrier injection speed and improve the performance of the quantum dot light-emitting diode.

Abstract: The present application discloses a method for regulating an electron mobility of a zinc oxide, and the method includes following step: preparing the zinc oxide, wherein the electron mobility of the zinc oxide is regulated by controlling a surface hydroxyl content of the zinc oxide during the preparation of the zinc oxide. In the method for regulating the electron mobility of the zinc oxide provided by the embodiment of the present application, carrier injection balance or improving electron mobility of quantum dot light-emitting diode devices can be achieved only by adjusting the surface hydroxyl content of the zinc oxide, without changing the device structure (inserting the electron barrier layer) or modifying the zinc oxide film by doping and other methods. The whole process is simple and low-cost, and has a good repeatability.

Abstract: The present disclosure relates to a nanomaterial, a light-emitting diode device, and a preparation method thereof. The nanomaterial includes a ZnO nanoparticle and an In2O3 shell layer covering a surface of the ZnO nanoparticle. In the present disclosure, the In2O3 shell layer are coated on the surface of the ZnO nanoparticle to form a ZnO@ In2O3 core shell structure, that is, prepare the nanomaterial. In the present disclosure, In2O3 having a wide bandgap is used as a shell layer to cover a semiconductor ZnO nanoparticle having a relatively narrow bandgap, which can effectively passivate the surface of the ZnO nanoparticle to reduce the surface defects and relieve lattice mismatch. Meanwhile, holes may be effectively blocked from being transported from a light-emitting layer to a cathode to improve the recombination efficiency of electrons and holes on the light-emitting layer. Thus, the light-emitting performance of the light-emitting device may be improved.

Abstract: A composite material, quantum dot light-emitting diode and preparation method thereof. The preparation method includes: providing ZnO nanoparticles and Au source, Au source is at least one of bulk Au or Au particles; mixing ZnO nanoparticles, Au source, S source with first organic solvent, performing hydrothermal reaction to prepare composite material. By performing hydrothermal reaction in organic solvent using ZnO nanoparticles, bulk Au and/or Au particles, and S source, S source can vulcanize surface of ZnO nanoparticles to form ZnS layer on surface of ZnO nanoparticles, Au source can be thermally dissolved and diffused into isolated distribution of atomic-level Au to realize loading on surface of ZnS layer, to obtain composite material with ZnO nanoparticles as core material, ZnS and Au as shell material. ZnS and Au in composite material can synergistically increase electron transmission efficiency of LED adopting same.

Abstract: A composite thin film includes N thin film layers stacked one over another in sequence from a first thin film layer to an N-th thin film layer. N is an integer satisfying 3?N?9. The N thin film layers are nano-ZnO thin films. A nano-ZnO particle size of the nano-ZnO thin films gradually increases or decreases from the first thin film layer to the N-th thin film layer.

Abstract: An electron transport thin film is comprised of nano-zinc oxide doped with metal ions. The nano-zinc oxide doped with the metal ions is nano-zinc oxide having a surface enriched with the metal ions.

Abstract: An electron transport material includes zinc oxide (ZnO) doped with metal ions. The metal ions are two or three metal ions of different valences of a same metal element. A lowest valence state of the metal ions is positive divalent.

Abstract: An electron transport thin film is comprised of nano-zinc oxide doped with metal ions. The nano-zinc oxide doped with the metal ions is nano-zinc oxide having a surface enriched with the metal ions.

Abstract: A composite thin film includes N thin film layers stacked one over another in sequence from a first thin film layer to an N-th thin film layer. N is an integer satisfying 3?N?9. The N thin film layers are nano-ZnO thin films. A nano-ZnO particle size of the nano-ZnO thin films gradually increases or decreases from the first thin film layer to the N-th thin film layer.

Abstract: An electron transport material includes zinc oxide (ZnO) doped with metal ions. The metal ions are two or three metal ions of different valences of a same metal element. A lowest valence state of the metal ions is positive divalent.