Abstract: Package design method for semiconductor chip package for high speed SerDes signals for optimization of package differential impedance and reduction of package differential insertion loss and differential return loss at data rates of 25 to 60 Gb/s and beyond. The method optimizes parameters of vertical interconnections of BGA ball, via, and PTH, and around the joint between vertical and horizontal interconnections of traces. Also disclosed are examples of chip package designs for high speed SerDes signals, including one using 0.8 mm BGA ball pitch and IO-layer buildup substrate, one using 1 mm BGA ball pitch and 14-layer buildup substrate, one using 6-layer buildup substrate with signals routed on top and bottom metal layers with microstrip line structure, and one using 12-layer package substrate with unique via configuration, all of which achieve low substrate differential impedance discontinuity, reduced differential insertion loss and differential return loss between BGA balls and C4 bumps.

Abstract: Package design method for semiconductor chip package for high speed SerDes signals for optimization of package differential impedance and reduction of package differential insertion loss and differential return loss at data rates of 25 to 60 Gb/s and beyond. The method optimizes parameters of vertical interconnections of BGA ball, via, and PTH, and around the joint between vertical and horizontal interconnections of traces. Also disclosed are examples of chip package designs for high speed SerDes signals, including one using 0.8 mm BGA ball pitch and 10-layer buildup substrate, one using 1 mm BGA ball pitch and 14-layer buildup substrate, one using 6-layer buildup substrate with signals routed on top and bottom metal layers with microstrip line structure, and one using 12-layer package substrate with unique via configuration, all of which achieve low substrate differential impedance discontinuity, reduced differential insertion loss and differential return loss between BGA balls and C4 bumps.

Abstract: Package design method for semiconductor chip package for high speed SerDes signals for optimization of package differential impedance and reduction of package differential insertion loss and differential return loss at data rates of 25 to 60 Gb/s and beyond. The method optimizes parameters of vertical interconnections of BGA ball, via, and PTH, and around the joint between vertical and horizontal interconnections of traces. Also disclosed are examples of chip package designs for high speed SerDes signals, including one using 0.8 mm BGA ball pitch and 10-layer buildup substrate, one using 1 mm BGA ball pitch and 14-layer buildup substrate, one using 6-layer buildup substrate with signals routed on top and bottom metal layers with microstrip line structure, and one using 12-layer package substrate with unique via configuration, all of which achieve low substrate differential impedance discontinuity, reduced differential insertion loss and differential return loss between BGA balls and C4 bumps.

Abstract: A package design method is disclosed for the optimization of package differential impedance at data rates of 25 Gb/s and beyond. The method optimizes the differential impedance of package vertical interconnections of BGA ball, via, and PTH as well as around the joint between the vertical interconnection and the horizontal interconnection of trace. At 8 ps rise time, a <5% impedance variation is obtained with a 0.8 mm BGA ball pitch and a 10-layer buildup substrate and a <10% impedance variation is obtained with a 1 mm BGA ball pitch and a 14-layer buildup substrate. The method is applicable to all BGA package designs running at 25 Gb/s and beyond.

Abstract: A package design method is disclosed for the optimization of package differential impedance at data rates of 25 Gb/s and beyond. The method optimizes the differential impedance of package vertical interconnections of BGA ball, via, and PTH as well as around the joint between the vertical interconnection and the horizontal interconnection of trace. At 8 ps rise time, a <5% impedance variation is obtained with a 0.8 mm BGA ball pitch and a 10-layer buildup substrate and a <10% impedance variation is obtained with a 1 mm BGA ball pitch and a 14-layer buildup substrate. The method is applicable to all BGA package designs running at 25 Gb/s and beyond.

Abstract: The present invention provides a method for packaging semiconductor device which is using more than once reflow processes to heat the solder ball to prevent the deformation of solder ball, so that the yield of the manufacturing process can be increased and the reliability of the semiconductor device can be increased.

Abstract: A semiconductor device with a cavity structure comprises: a carrier substrate; a first die having an active surface and the pads thereon; a back surface of the first die is disposed on the carrier substrate; a second die having a top surface and a back surface and a cavity structure therein; the top surface of a second die is flipped to dispose on the first die, and the cavity structure is an inverse U-type to dispose between the active surface of the first die and the top surface of the second die; the wires is electrically connected the pads with the first connecting points; a package body encapsulated the first die, the second die, the wires, and the portion of the top surface of the carrier substrate; and the connecting components is disposed on the back surface of the carrier substrate and is electrically connected the second connecting points.

Abstract: A semiconductor device with a cavity structure comprises: a carrier substrate; a first die having an active surface and the pads thereon; a back surface of the first die is disposed on the carrier substrate; a second die having a top surface and a back surface and a cavity structure therein; the top surface of a second die is flipped to dispose on the first die, and the cavity structure is an inverse U-type to dispose between the active surface of the first die and the top surface of the second die; the wires is electrically connected the pads with the first connecting points; a package body encapsulated the first die, the second die, the wires, and the portion of the top surface of the carrier substrate; and the connecting components is disposed on the back surface of the carrier substrate and is electrically connected the second connecting points.

Abstract: A multiple substrate system, a method, and structure for adapting solder volume to a warped module. An illustrative embodiment comprises a method for joining a first substrate to a second substrate. A deviation from a nominal gap between the first substrate and the second substrate at a first region of the first substrate is ascertained. A volume of solder paste necessary to compensate for the deviation from a nominal gap is determined. The volume of solder paste necessary to compensate for the deviation at the first region of the first substrate is applied. Further, the second substrate is bonded to the first substrate using, at least in part, the solder paste applied at the first region of the first substrate.

Abstract: The present invention provides a method for packaging semiconductor device which is using more than once reflow processes to heat the solder ball to prevent the deformation of solder ball, so that the yield of the manufacturing process can be increased and the reliability of the semiconductor device can be increased.

Abstract: A multiple substrate system, a method, and structure for adapting solder volume to a warped module. An illustrative embodiment comprises a method for joining a first substrate to a second substrate. A deviation from a nominal gap between the first substrate and the second substrate at a first region of the first substrate is ascertained. A volume of solder paste necessary to compensate for the deviation from a nominal gap is determined. The volume of solder paste necessary to compensate for the deviation at the first region of the first substrate is applied. Further, the second substrate is bonded to the first substrate using, at least in part, the solder paste applied at the first region of the first substrate.

Abstract: An organic land grid array having multiple built up layers of metal sandwiching non-conductive layers, having a staggered pattern of degassing holes in the metal layers. The staggered pattern occurs in two substantially perpendicular directions. Traces between the metal layers have reduced impedance variation due to the degassing hole pattern.

Abstract: The present invention is a method and apparatus to minimize via inductance in a multi-layer organic land grid array (OLGA) packaging. A plurality of layers are staggered vertically. The plurality of layers include first and second layers which have first and second metal strip connections, respectively. The second layer is above the first layer. The first metal strip connection is aligned with the second metal strip connection to maximize mutual inductance between the first and second layers.