Patents by Inventor Longru Zheng

Longru Zheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050140283
    Abstract: A multilayer structure to form an active matrix display with single crystalline Si TFTs over a transmissive substrate. A light-emitting device is integrated with a single-crystalline Si layer over the light-transmitting substrate. The light generated by the light-emitting device is emitted from the substrate.
    Type: Application
    Filed: February 13, 2003
    Publication date: June 30, 2005
    Inventors: Silvanus Lau, James Mayer, Liang-Sun Hung, Longru Zheng
  • Patent number: 6208075
    Abstract: A fluorocarbon based conductive polymer and method of making such polymer are disclosed. The conductive polymer is advantageously used in electroluminescent devices.
    Type: Grant
    Filed: November 5, 1998
    Date of Patent: March 27, 2001
    Assignee: Eastman Kodak Company
    Inventors: Liang-Sun Hung, Longru Zheng, Joseph K. Madathil
  • Patent number: 5262392
    Abstract: A method for patterning precursor film, a product thereof, a method for preparing a patterned ceramic film and a processing workpiece. The method for patterning precursor film includes the steps of depositing a blocking layer over the precursor film, patterning the overlaid blocking layer to uncover portions of the precursor film, irradiating the patterned blocking layer and uncovered portions of the precursor film with a beam sufficiently energetic to radiation modify the full thickness of unmasked portions of the precursor film and insufficiently energetic to radiation modify portions of the precursor film covered by the blocking layer, and developing the precursor film. The blocking layer has a lesser thickness than the precursor film, but is sufficiently thick to block an irradiating beam having the minimal energy necessary to radiation modify the full thickness of the precursor layer.
    Type: Grant
    Filed: July 15, 1991
    Date of Patent: November 16, 1993
    Assignee: Eastman Kodak Company
    Inventors: Liang-Sun Hung, Longru Zheng, Yann Hung
  • Patent number: 5160793
    Abstract: Formation of shallow ohmic contacts with low contact resistance on n-Al.sub.x Ga.sub.1-x As by sequential deposition of Pd/Au-Ge/Ag/Au and rapid thermal annealing.
    Type: Grant
    Filed: June 7, 1991
    Date of Patent: November 3, 1992
    Assignee: Eastman Kodak Company
    Inventor: Longru Zheng