Patents by Inventor Longxian Zhang

Longxian Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9828121
    Abstract: A sealant filling device comprises a sealant board and a plurality of injectors installed on it, the sealant board comprises a base and a sealing cover which opening a plurality of sealing holes, the injector comprises a feeding hole which is opposite to the sealing holes, the sealant can be poured into the injector from the sealing holes to the feeding hole, a spring between the top of the injector and the sealing cover is provided for moving in control, while the volume of the sealant reaches the preset value, the spring will be control to move and seal off the sealing hole to stop sealing. If the volume of the sealant reaches the preset volume, then the controller IC will drive the spring moving and sealing off the sealing hole by controlling of the motor. The sealant volume in each injector can be separated distributed.
    Type: Grant
    Filed: December 26, 2013
    Date of Patent: November 28, 2017
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD
    Inventor: Longxian Zhang
  • Patent number: 9698012
    Abstract: Disclosed are a method and an apparatus for manufacturing low temperature poly-silicon film, and a low temperature poly-silicon film. The method includes: providing a substrate; forming an amorphous silicon film; applying different temperatures to different regions of the amorphous silicon film by using an excimer laser annealing method, to change the amorphous silicon film into a molten state; and recrystallizating the amorphous silicon film in the molten state, a region having a lower temperature serving as a starting point, a region having a higher temperature serving as an end point, to form a low temperature poly-silicon film. The low temperature poly-silicon film manufactured by the above method and apparatus has a greater size of the crystalline grain and a larger electronic mobility than in the existing technology.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: July 4, 2017
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
    Inventors: Longxian Zhang, Wei Yu
  • Publication number: 20160288934
    Abstract: A sealant filling device comprises a sealant board and a plurality of injectors installed on it, the sealant board comprises a base and a sealing cover which opening a plurality of sealing holes, the injector comprises a feeding hole which is opposite to the sealing holes, the sealant can be poured into the injector from the sealing holes to the feeding hole, a spring between the top of the injector and the sealing cover is provided for moving in control, while the volume of the sealant reaches the preset value, the spring will be control to move and seal off the sealing hole to stop sealing. If the volume of the sealant reaches the preset volume, then the controller IC will drive the spring moving and sealing off the sealing hole by controlling of the motor. The sealant volume in each injector can be separated distributed.
    Type: Application
    Filed: December 26, 2013
    Publication date: October 6, 2016
    Inventor: Longxian ZHANG
  • Patent number: 9287108
    Abstract: The present invention relates to the field of liquid crystal displaying techniques, and in particular to a preparation method of low-temperature polysilicon thin film, including: growing a buffer layer and then an amorphous silicon layer on the substrate; heating up an amorphous silicon layer to reach a temperature higher than room temperature, and performing pre-cleaning on the amorphous silicon layer; and using excimer laser annealing (ELA) to radiate on the pre-cleaned amorphous silicon layer in previous step to transform the amorphous silicon into polysilicon. The present invention further provides a manufacturing system of low-temperature polysilicon thin film. By improving the manufacturing system of the low-temperature polysilicon thin film and pre-cleaning method, the present invention improves thickness non-uniformity of the amorphous silicon layer and the uniformity of the polysilicon layer transformed in the subsequent step of ELA radiation.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: March 15, 2016
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
    Inventor: Longxian Zhang
  • Publication number: 20160049300
    Abstract: Disclosed are a method and an apparatus for manufacturing low temperature poly-silicon film, and a low temperature poly-silicon film. The method includes: providing a substrate; forming an amorphous silicon film; applying different temperatures to different regions of the amorphous silicon film by using an excimer laser annealing method, to change the amorphous silicon film into a molten state; and recrystallizating the amorphous silicon film in the molten state, a region having a lower temperature serving as a starting point, a region having a higher temperature serving as an end point, to form a low temperature poly-silicon film. The low temperature poly-silicon film manufactured by the above method and apparatus has a greater size of the crystalline grain and a larger electronic mobility than in the existing technology.
    Type: Application
    Filed: August 26, 2014
    Publication date: February 18, 2016
    Applicant: Shenzhen China Star Optoelectronics Technology Co. ,Ltd.
    Inventors: Longxian Zhang, Wei Yu
  • Patent number: 9209025
    Abstract: The present invention provides a method for making low temperature poly-silicon thin film, including the step of growing amorphous silicon layer, the step of firstly growing a layer of silicon oxide over the amorphous silicon layer; then forming a plurality of concave surfaces across the silicon oxide layer, wherein the concave surfaces will reflect light beams vertically projected toward the silicon oxide; and finally, the step of projecting excimer laser beam toward the amorphous silicon layer through the silicon oxide layer to transform the amorphous silicon layer into the low temperature poly-silicon thin film. The present invention further provides a low temperature poly-silicon thin film made from the method described above, and also a low temperature poly-silicon transistor. When the excimer laser annealing process is implemented to make the low temperature poly-silicon thin film, the starting point and direction of the recrystallization can be controlled so as to attain larger grain size.
    Type: Grant
    Filed: December 30, 2013
    Date of Patent: December 8, 2015
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
    Inventor: Longxian Zhang
  • Publication number: 20150214036
    Abstract: The present invention relates to the field of liquid crystal displaying techniques, and in particular to a preparation method of low-temperature polysilicon thin film, including: growing a buffer layer and then an amorphous silicon layer on the substrate; heating up an amorphous silicon layer to reach a temperature higher than room temperature, and performing pre-cleaning on the amorphous silicon layer; and using excimer laser annealing (ELA) to radiate on the pre-cleaned amorphous silicon layer in previous step to transform the amorphous silicon into polysilicon. The present invention further provides a manufacturing system of low-temperature polysilicon thin film. By improving the manufacturing system of the low-temperature polysilicon thin film and pre-cleaning method, the present invention improves thickness non-uniformity of the amorphous silicon layer and the uniformity of the polysilicon layer transformed in the subsequent step of ELA radiation.
    Type: Application
    Filed: December 27, 2013
    Publication date: July 30, 2015
    Inventor: Longxian Zhang
  • Publication number: 20150194310
    Abstract: The present invention provides a method for making low temperature poly-silicon thin film, including the step of growing amorphous silicon layer, the step of firstly growing a layer of silicon oxide over the amorphous silicon layer; then forming a plurality of concave surfaces across the silicon oxide layer, wherein the concave surfaces will reflect light beams vertically projected toward the silicon oxide; and finally, the step of projecting excimer laser beam toward the amorphous silicon layer through the silicon oxide layer to transform the amorphous silicon layer into the low temperature poly-silicon thin film. The present invention further provides a low temperature poly-silicon thin film made from the method described above, and also a low temperature poly-silicon transistor. When the excimer laser annealing process is implemented to make the low temperature poly-silicon thin film, the starting point and direction of the recrystallization can be controlled so as to attain larger grain size.
    Type: Application
    Filed: December 30, 2013
    Publication date: July 9, 2015
    Inventor: Longxian Zhang