Abstract: A thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The thin film transistor comprises a gate electrode, an active layer, a source electrode and a drain electrode. The source electrode and the drain electrode include a first conductive layer provided on the active layer, and an etching rate of a material of the first conductive layer is greater than an etching rate of a material of the active layer in an etching liquid. The problem that the active layer of the thin film transistor is easily corroded in a back channel etch process is avoided, a number of patterning processes is reduced, and fabrication cost is reduced.

Abstract: The present application discloses an array substrate having a signal line; a common electrode line; an electrostatic discharge (ESD) protector comprising a first discharging terminal coupled to the signal line, and a second discharging terminal coupled to the common electrode line; and an ESD protector repair unit comprising a first repair terminal in close proximity to the first discharging terminal but separated from each other, a second repair terminal in close proximity to the common electrode line but separated from each other.

Abstract: The present disclosure provides an organic light-emitting diode (OLED) array substrate. The OLED array substrate includes a display area with OLEDs arranged in arrays, electrostatic discharge lines, and peripheral electrostatic discharge areas with conductive areas electrically connected to a cathode of the OLEDs and electrically connected to the electrostatic discharge lines through switch modules.

Abstract: A thin film transistor, a manufacturing method thereof, and a display device are provided. The thin film transistor includes a gate electrode (21), an active layer (23), a source electrode (241) and a drain electrode (242). The source electrode (241) and the drain electrode (242) are formed of at least two materials, the forming materials of the source electrode (241) and the drain electrode (242) can create a cell reaction in a corresponding etching solution so as to be etched, and material of the active layer (23) is not corroded by the etching solution. With the thin film transistor and manufacturing method thereof according to embodiments of the invention, a problem that an active layer is liable to be corroded in an etching procedure of a source electrode and a drain electrode can be solved, and thus the thin film transistor device can be manufactured by using a back channel etch process.

Abstract: An array substrate of an organic light-emitting display device, a fabrication method thereof and an organic light-emitting display device are provided.

Abstract: A detection circuit, a detection method and a pixel driving circuit are disclosed in the embodiments of the present disclosure. The detection circuit comprises a first detection unit, a second detection unit, a load unit, a light emitting device and a driving unit. The first detection module is connected to the driving unit and the load unit. The second detection unit is connected to the light emitting device and the load unit.

Abstract: A pixel circuit, a drive method based on the pixel circuit, and a display device. The pixel circuit comprises: a first capacitor (C1), a second capacitor (C2), a second transistor (T2), a third transistor (T3) and a light-emitting branch for being coupled between a first common electrode (VDD) and a second common electrode (VSS); wherein the light-emitting branch comprises a first transistor (T1), a fourth transistor (T4) and a light-emitting element (OLED) which are connected in series; a first electrode of the first transistor (T1) is coupled to a second electrode of the fourth transistor (T4), and a coupling node is a third node (C); and a control electrode of the fourth transistor (T4) is used for inputting a second scanning control signal (VEM), and the fourth transistor (T4) switches the ON/OFF state of the light-emitting branch in response to the second scanning control signal (VEM).

Abstract: A pixel circuit, a drive method based on the pixel circuit, and a display device. The pixel circuit comprises: a first capacitor (C1), a second capacitor (C2), a second transistor (T2), a third transistor (T3) and a light-emitting branch for being coupled between a first common electrode (VDD) and a second common electrode (VSS); wherein the light-emitting branch comprises a first transistor (T1), a fourth transistor (T4) and a light-emitting element (OLED) which are connected in series; a first electrode of the first transistor (T1) is coupled to a second electrode of the fourth transistor (T4), and a coupling node is a third node (C); and a control electrode of the fourth transistor (T4) is used for inputting a second scanning control signal (VEM), and the fourth transistor (T4) switches the ON/OFF state of the light-emitting branch in response to the second scanning control signal (VEM).

Abstract: The present application discloses an array substrate having a signal line; a common electrode line; an electrostatic discharge (ESD) protector comprising a first discharging terminal coupled to the signal line, and a second discharging terminal coupled to the common electrode line; and an ESD protector repair unit comprising a first repair terminal in close proximity to the first discharging terminal but separated from each other, a second repair terminal in close proximity to the common electrode line but separated from each other.

Abstract: There are provided in the present disclosure a pixel driving circuit, an array substrate and a display apparatus.

Abstract: The present disclosure relates to a pixel circuit, a driving method thereof and related devices. The pixel circuit comprises: a reset compensation module, a data writing module, a storage module and a driving transistor. With the cooperation of each module, the pixel circuit can compensate shift of a threshold voltage for a driving transistor by storing the threshold voltage for the driving transistor in the storage module. Therefore, when the source of the driving transistor in the pixel circuit is connected with a light emitting device for driving it to emit light for display, the driving current of the driving transistor for driving the light emitting device to emit light will be only associated with the voltage of the data signal, but not the threshold voltage for the driving transistor. In this way, influence of the threshold voltage of the driving transistor on the light emitting device will be avoided.

Abstract: The present disclosure provides an organic light-emitting diode (OLED) array substrate. The OLED array substrate includes a display area with OLEDs arranged in arrays, electrostatic discharge lines, and peripheral electrostatic discharge areas with conductive areas electrically connected to a cathode of the OLEDs and electrically connected to the electrostatic discharge lines through switch modules.

Abstract: The embodiments of the present disclosure provide an array substrate and manufacturing method thereof, and a display device, which relates to the display technical field. The manufacturing method of the array substrate comprises forming thin film transistors and signal lines, and further comprises forming signal line connecting lines, wherein the signal line connecting lines at least electrically connect the same type of signal lines. Prior to completion of manufacturing the last film layer in the manufacture procedure of said array substrate, the method further comprises etching via holes on the signal line connecting lines or at the positions of the signal lines which are close to the signal line connecting lines, said via holes being used for cutting off electric connections between the signal lines. It is for use in the manufacture of an array substrate and display device.

Abstract: A thin film transistor, a manufacturing method thereof, and a display device are provided. The thin film transistor includes a gate electrode (21), an active layer (23), a source electrode (241) and a drain electrode (242). The source electrode (241) and the drain electrode (242) are formed of at least two materials, the forming materials of the source electrode (241) and the drain electrode (242) can create a cell reaction in a corresponding etching solution so as to be etched, and material of the active layer (23) is not corroded by the etching solution. With the thin film transistor and manufacturing method thereof according to embodiments of the invention, a problem that an active layer is liable to be corroded in an etching procedure of a source electrode and a drain electrode can be solved, and thus the thin film transistor device can be manufactured by using a back channel etch process.

Abstract: An array substrate of an organic light-emitting display device, a fabrication method thereof and an organic light-emitting display device are provided.

Abstract: Designs and fabrication of dual-gate thin film transistors are provided. An active region and a top gate electrode of the transistor can be made of a transparent thin film material. A photoresist can be coated onto a surface of the transparent conductive thin film for forming the top gate electrode. Light is from the bottom of the substrate during exposure. After the development, a photoresist pattern aligned with the bottom gate electrode is formed on the surface of the conductive thin film. The top gate electrode aligned with the bottom gate electrode is formed by etching the conductive thin film. The bottom gate electrode can be used as a mask, which may save the cost for manufacturing the transistor and improve the accuracy of alignment between the top gate electrode and the bottom gate electrode and the performance of the dual-gate thin film transistor.

Abstract: Designs and fabrication of dual-gate thin film transistors are provided. An active region and a top gate electrode of the transistor can be made of a transparent thin film material. A photoresist can be coated onto a surface of the transparent conductive thin film for forming the top gate electrode. Light is from the bottom of the substrate during exposure. After the development, a photoresist pattern aligned with the bottom gate electrode is formed on the surface of the conductive thin film. The top gate electrode aligned with the bottom gate electrode is formed by etching the conductive thin film. The bottom gate electrode can be used as a mask, which may save the cost for manufacturing the transistor and improve the accuracy of alignment between the top gate electrode and the bottom gate electrode and the performance of the dual-gate thin film transistor.

Abstract: The present invention relates to a sulfur transfer additive for catalytic cracking of hydrocarbons and a catalytic cracking process of hydrocarbons using the sulfur transfer additive, said additive is a uniform liquid comprising at least two metal elements selected from the following three classes: a). alkaline earth metals, b). transition metals and P zone metals, and c). rare earth metals, and wherein there are at least two metal elements from the different classes. The present sulfur transfer additive can reduce the SOx content in the regenerator flue gas and the sulfur content in the light oil products at the same time, and has no negative effect on the activity and selectivity of the catalyst in the FCC system.

Abstract: An additive used in catalytic cracking of hydrocarbons, which is in the form of homogeneous liquid and comprises a composite metal compound, wherein said composite metal compound consists of the oxides, hydroxides, organic acid salts, inorganic acid salts or metal organic complex compounds of at least one of the 1st group metals and at least one of the 2nd group metals, wherein the 1st group metals are selected from the group consisting of the metals of the IIIA, IVA, VA, VIA groups of the Element Period Table, boron, silicon, phosphorous and tellurium; wherein the 2nd group metals are selected from the group consisting of alkali-earth metals, transition metals, and rare earth metals, is disclosed. A process of catalytic cracking of hydrocarbons, utilizing the additive is also disclosed. The additive can passivate metals and promote the oxidation of CO, and is operated easily with production cost decreased.

Abstract: Disclosed is a catalytic promoter for fluid catalytic cracking of hydrocarbons, comprising a HZSM-5 zeolite in an amount of 5-65 wt % based on the total weight of the catalytic promoter, said zeolite being modified with Zn and at least one element selected from the group consisting of P, Ga, Al, Ni and rare earth elements, the combined amount of said modifying elements being 0.01-10.37 wt % based on total weight of said modified HZSM-5 zeolite. A reduced olefin content in gasoline from catalytic cracking process, an increased gasoline octane number and an increased lower olefin yield can be obtained using said catalytic promoter.