Patents by Inventor Lora Birkefeld Thrun

Lora Birkefeld Thrun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LOW CARBON DEFECT COPPER-MANGANESE SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME
    Publication number: 20240384394
    Abstract: Provided is a low carbon defect copper-manganese (CuMn) sputtering target and systems and methods for producing the same. The low carbon defect CuMn sputtering target may comprise of copper with a purity of at least about 99.9999%, manganese with a purity of about 99.9% to about 99.999%, and one or more active elements comprising of oxygen (O) at about 100 parts per million (ppm) to about 4000 ppm, iron (Fe) at about 5 parts per billion (ppb) to about 100 ppm, sulfur(S) at about 5 ppm to about 400 ppm, hydrogen (H) at about 1 ppm to about 10 ppm, and chromium (Cr) at about 5 ppb to about 200 ppm, wherein the manganese has a compositional range of up to about 5 wt %.
    Type: Application
    Filed: July 26, 2024
    Publication date: November 21, 2024
    Applicant: Tosoh SMD, Inc.
    Inventors: Eduardo del Rio Perez, Erich Walter Theado, Lora Birkefeld Thrun
  • LOW CARBON DEFECT COPPER-MANGANESE SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME
    Publication number: 20240384395
    Abstract: Provided is a low carbon defect copper-manganese (CuMn) sputtering target and systems and methods for producing the same. The low carbon defect CuMn sputtering target may comprise of copper with a purity of at least about 99.9999%, manganese with a purity of about 99.9% to about 99.999%, and one or more active elements comprising of oxygen (O) at about 100 parts per million (ppm) to about 4000 ppm, iron (Fe) at about 5 parts per billion (ppb) to about 100 ppm, sulfur (S) at about 5 ppm to about 400 ppm, hydrogen (H) at about 1 ppm to about 10 ppm, and chromium (Cr) at about 5 ppb to about 200 ppm, wherein the manganese has a compositional range of up to about 5 wt %.
    Type: Application
    Filed: July 26, 2024
    Publication date: November 21, 2024
    Applicant: Tosoh SMD, Inc.
    Inventors: Eduardo del Rio Perez, Erich Walter Theado, Lora Birkefeld Thrun
  • LOW CARBON DEFECT COPPER-MANGANESE SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME
    Publication number: 20230287559
    Abstract: Provided is a low carbon defect copper-manganese (CuMn) sputtering target and systems and methods for producing the same. The low carbon defect CuMn sputtering target may comprise of copper with a purity of at least about 99.9999%, manganese with a purity of about 99.9% to about 99.999%, and one or more active elements comprising of oxygen (O) at about 100 parts per million (ppm) to about 4000 ppm, iron (Fe) at about 5 parts per billion (ppb) to about 100 ppm, sulfur (S) at about 5 ppm to about 400 ppm, hydrogen (H) at about 1 ppm to about 10 ppm, and chromium (Cr) at about 5 ppb to about 200 ppm, wherein the manganese has a compositional range of up to about 5 wt %.
    Type: Application
    Filed: March 10, 2023
    Publication date: September 14, 2023
    Applicant: Tosoh SMD, Inc.
    Inventors: Eduardo del Rio Perez, Erich Walter Theado, Lora Birkefeld Thrun