Abstract: A radio frequency (RF) amplifier structure provides highly efficient RF signal amplification across a wide bandwidth, when implemented in both inverting and non-inverting Doherty designs, by employing matching impedance transform circuits that comprise a low pass multiple section inductance-capacitance circuit and that provides impedance matching between the output of an amplifier device and a power combiner, wherein the output matching impedance transform circuit has approximately an odd multiple of 90 electrical degrees over the RF amplifier structure's frequency range of operation, and adjustable phase delay circuits that route an amplified RF signal to the power combiner and that are controllably adjusted based on a frequency of an RF input signal over an operating frequency range of the RF amplifier structure.

Abstract: A non-polarized laser trim chip stub in accordance with the invention includes a trimmable top conductor (12) capable of being trimmed to alter the electrical properties of the chip stub, a bottom conductor (58) having at least a first conductive portion (68) and a second conductive portion (72), a dielectric (44) separating said top conductor from said bottom conductor, and conductive passages (42) electrically connecting the top conductor or a portion thereof to the bottom conductor or a portion thereof. In alternate embodiments, the non-polarized laser trim chip stub's top conductor (102) is separated into a trimmable stub portion (110) and an end portion (112), and the bottom conductor (150) may be separated into three conductive portions (160, 162 and 164) to allow for the middle portion (162) to be used as a heat sink to aid in the dissipation of heat generated during high power applications.

Abstract: The method includes providing a substrate (18) having a semiconductor die (12) thereon, the semiconductor die having a major surface (23); disposing an input region (24) an active region (32) and a conductive region (34) on the major surface, the conductive region electrically coupling the input region and the active region; providing an inductive metal region (42) in communication with the input region, the inductive metal region sized to allow real-time iterative tuning of the electronic device; and receiving a fluid by a nozzle (60), the nozzle atomizing the fluid and discharging the fluid onto the major surface.

Abstract: The device includes a substrate (18). A first semiconductor die (12) is disposed on the substrate (18). The first semiconductor die (12) has a major surface (23) and at least a portion of the major surface (23) is positioned to receive a cooling medium. A signal input region (24), an active region (32) and a conductive region (34) are disposed on the major surface (23). The conductive region (34) is coplanar with, and electrically couples, the signal input region (24) and the active region (32). An electrically reactive metal region (42) is in communication with the signal input region (24). The electrically reactive metal region (42) is sized to allow real-time iterative tuning of the electronic device.