Abstract: An expandable implant for augmenting a damaged or otherwise torn posterior annulus fibrosus. The implant is deployable into an evacuated posterior disc space following a subtotal nuclectomy. The implant includes an inflatable balloon which is fixed to the annulus fibrosus to protect against migration. When inflated with a curable polymer, the posterior wall of the implant is intimately disposed along the inner surface of the annulus fibrosus to provide a substantially fluid-tight seal of the annular tear or defect and reinforce the weakened posterior annulus. The anterior wall of the implant sequesters the nuclear remnant to guard against disc remnant herniation. The implant can restore intradiscal pressure and disc height. An integrated posterior reinforcement band creates a strong, yet flexible and resilient structure, resistant to penetration of the implant through the annular tear or defect.

Abstract: A nuclear disc implant includes an inner fillable enclosure and an outer fillable enclosure. After insertion into a enucleated disc cavity, the inner enclosure is filled with a fluid and the outer fillable enclosure is filled with a curable material. The curable material is allowed to cure and the fluid is removed from the inner enclosure to leave an inner enclosure surrounded by an cured outer enclosure. A reinforcing band may be provided around the nuclear disc implant. An inflation tool to fill the nuclear disc implant is provided.

Abstract: An expandable implant for augmenting a damaged or otherwise torn posterior annulus fibrosus. The implant is deployable into an evacuated posterior disc space following a subtotal nuclectomy. The implant includes an inflatable balloon which is fixed to the annulus fibrosus to protect against migration. When inflated with a curable polymer, the posterior wall of the implant is intimately disposed along the inner surface of the annulus fibrosus to provide a substantially fluid-tight seal of the annular tear or defect and reinforce the weakened posterior annulus. The anterior wall of the implant sequesters the nuclear remnant to guard against disc remnant herniation. The implant can restore intradiscal pressure and disc height. An integrated posterior reinforcement band creates a strong, yet flexible and resilient structure, resistant to penetration of the implant through the annular tear or defect.

Abstract: In one example embodiment, an apparatus for providing negative-pressure therapy may comprise a negative-pressure source, a pressure sensor, and a control valve. The negative-pressure source may be configured to be fluidly coupled to a distribution component. The control valve may be fluidly coupled to the pressure sensor and configured to be selectively coupled to the negative-pressure source, the distribution component, or both. A controller may also be configured to operate the control valve to selectively couple the pressure sensor to at least one of the negative-pressure source and the distribution component through the control valve, and the pressure sensor may provide a feedback signal to the controller indicative of pressure in a feedback path associated with the position of the control valve. The controller may also be configured to operate the negative-pressure source based on the feedback signal.

Abstract: A prosthesis for implantation in a de-nucleated intervertebral disc includes a fiber ring-like layer which encloses a polymeric layer to create an annular space. The annular space is inflatable with an in-situ curable liquid polymer and forms an interior cavity. The annular space may be expanded uniformly or differentially to be tailored to the needs of a particular vertebral segment and to achieve optimal disc space width and angle, thereby stabilizing the segment while preserving normal motion of the vertebral segment. The interior cavity provides a void that allows inward deformation of the implant during weight bearing activities and bending. The prosthesis can be elastically deformed through axial elongation to a reduced profile to load into a delivery cannula using pulling techniques.

Abstract: In one example embodiment, an apparatus may include a panel with integrated fluid channels, wherein the panel and the fluid channel consist only of surfaces that can be manufactured with a straight-pull mold. A port may also be integrated into the panel to facilitate coupling the fluid channel to pneumatic components in an assembly. A seal may be secured to the panel over the fluid channel to form an integrated fluid conductor. The seal is preferably an adhesive label that can also be used for product labeling. Such an apparatus may be used in a control unit of a therapy system, employing several integrated fluid conductors. A method of manufacturing may include molding a panel, wherein the mold forms a channel integral to the panel. The panel and the channel preferably consist of surfaces that can be molded with a straight-pull mold.

Abstract: An amplifier includes a main amplifier circuit and at least one auxiliary amplifier circuit. Portions of an RF signal to be amplified are delivered to the main and auxiliary amplifiers. The auxiliary amplifier circuit is selectively operable to operate in combination with the main amplifier circuit, such as based on the level of the RF signal. At least one hybrid coupler circuit has input ports coupled with outputs of the main amplifier circuit and auxiliary amplifier circuit. The hybrid coupler circuit is operable to combine amplifier circuit output signals at a coupler first output port. A coupler second output port is terminated with one of an electrical short and an electrical open circuit.

Abstract: An amplifier includes a main amplifier circuit and at least one auxiliary amplifier circuit. Portions of an RF signal to be amplified are delivered to the main and auxiliary amplifiers. The auxiliary amplifier circuit is selectively operable to operate in combination with the main amplifier circuit, such as based on the level of the RF signal. At least one hybrid coupler circuit has input ports coupled with outputs of the main amplifier circuit and auxiliary amplifier circuit. The hybrid coupler circuit is operable to combine amplifier circuit output signals at a coupler first output port. A coupler second output port is terminated with one of an electrical short and an electrical open circuit.

Abstract: An electronic device (10) having a thermal control capability is disclosed. The electronic device includes a substrate (16), a signal conductive region (26) disposed on at least a portion of the substrate, the signal conductive region configured to provide a signal path, and a first semiconductor die (12) having an active surface (18) and a back surface (20). The back surface is configured with a plurality of bubbler cavities positioned to receive a cooling fluid (24). In addition, the first semiconductor die includes a first plurality of solder bumps (30) disposed on the active surface, the first plurality of solder bumps contiguous with, and electrically coupling the active surface to the signal conductive region. Further, an electrically reactive metal region (402) in communication with the signal conductive region is sized to provide a location for real-time iterative tuning of the electronic device.

Abstract: A laser-tunable semiconductor device assembly (LSDA) is provided for electrical connection between multiple semiconductor devices (101, 103) within a RF transistor (100). The LSDA (100) provides for flip-chip type electrical connection between semiconductor devices (101, 103) utilizing solder bumps (503) existing on the semiconductor devices (101, 103) or the LSDA (100). A metalization pattern exists on both sides of the LSDA (100), electrically connected through via holes (403) existing in the LSDA (100). Laser tuning metallic pads (405) are provided for performance matching of the transistor. The use of the LSDA (100) provides for accurate modeling of the electrical connection between semiconductor devices (101, 103), while allowing for "on-line" process control of electrical performance of the transistor and acceptable heat dissipation through the bottom of the semiconductor devices (101, 103).