Abstract: An electronic device comprises a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and a at least one epitaxial layer of graphene is disposed on the single crystal region. In a currently preferred embodiment, the single crystal region comprises multilayered hexagonal BN. A method of making such an electronic device comprises the steps of: (a) providing a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and (b) epitaxially forming a at least one graphene layer on that region. In a currently preferred embodiment, step (a) further includes the steps of (a1) providing a single crystal substrate of graphite and (a2) epitaxially forming multilayered single crystal hexagonal BN on the substrate.

Abstract: An electronic device comprises a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and a at least one epitaxial layer of graphene is disposed on the single crystal region. In a currently preferred embodiment, the single crystal region comprises multilayered hexagonal BN. A method of making such an electronic device comprises the steps of: (a) providing a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and (b) epitaxially forming a at least one graphene layer on that region. In a currently preferred embodiment, step (a) further includes the steps of (a1) providing a single crystal substrate of graphite and (a2) epitaxially forming multilayered single crystal hexagonal BN on the substrate.

Abstract: An electronic device comprises a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and a at least one epitaxial layer of graphene is disposed on the single crystal region. In a currently preferred embodiment, the single crystal region comprises multilayered hexagonal BN. A method of making such an electronic device comprises the steps of: (a) providing a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and (b) epitaxially forming a at least one graphene layer on that region. In a currently preferred embodiment, step (a) further includes the steps of (a1) providing a single crystal substrate of graphite and (a2) epitaxially forming multilayered single crystal hexagonal BN on the substrate.

Abstract: An effusion source comprises a vitreous C filament and a heater to increase the temperature of the filament to produce a C vapor. Also described is a deposition method comprising (a) depositing a layer of material on a substrate, and (b) during step (a), heating a body of material that includes vitreous carbon so that carbon from the body is vaporized and incorporated into the deposited layer.

Abstract: A method includes epitaxially growing a semiconductor layer with a free surface and performing an anneal that reduces atomic roughness on the free surface. The free surface has an orientation with respect to lattice axes of the layer for which atoms in flat regions of the free surface have more chemical bonds to the layer than do, at least, some of the atoms at edges of monolayer steps on the free surface.

Abstract: A hot-electron bolometric mixer/detector, which uses the nonlinearities of the heated two-dimensional electron gas medium, is described. Electrons in the illustrative embodiment of the present invention are “velocity-cooled” rather than “diffusion-cooled” or “phonon-cooled” like hot-electron bolometric mixer/detectors in the prior art. The illustrative embodiment is velocity-cooled when the elastic mean-free path of the electrons is greater than the channel length, L, of the mixer/detector. In this case, the motion of the hot electrons is more accurately modeled by their speed rather than in accordance with diffusion models. This leads to a mixer/detector with a wider modulation bandwidth at a lower power than is exhibited by mixer/detectors in the prior art.

Abstract: A method includes epitaxially growing a semiconductor layer with a free surface and performing an anneal that reduces atomic roughness on the free surface. The free surface has an orientation with respect to lattice axes of the layer for which atoms in flat regions of the free surface have more chemical bonds to the layer than do, at least, some of the atoms at edges of monolayer steps on the free surface.

Abstract: A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation take from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. Also provided is a method of making a TFR in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.

Abstract: Quantum carrier confinement in a wire-like region defined by intersecting layers is significantly enhanced by various structural modifications of a conventional quantum wire device. In that way, operation of the device at room temperature and above is made feasible.