Patents by Inventor Loren Thomas Lancaster

Loren Thomas Lancaster has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having silicon-rich layer and method of manufacturing such a device
    Patent number: 6709928
    Abstract: A semiconductor device and method of manufacturing a semiconductor device is disclosed in which a SONOS-type dielectric may include a charge storing dielectric (206) that includes at least one charge trapping dielectric layer (212) formed within. A charge trapping dielectric layer (212) may be a silicon-rich silicon nitride layer that may trap charge that could otherwise tunnel through a charge storing dielectric (206). A method may include forming a tunneling dielectric (302), forming a first portion of a charge storing layer (304-0), forming a charge trapping layer (306), forming a second portion of a charge storing layer (304-1), and forming a top dielectric (308).
    Type: Grant
    Filed: July 31, 2001
    Date of Patent: March 23, 2004
    Assignee: Cypress Semiconductor Corporation
    Inventors: Fred Jenne, Loren Thomas Lancaster