Abstract: An improved test structure for measurement of width of conductive lines formed on substrates as performed in semiconductor fabrication, and an improved reference grid for calibrating instruments for such measurements, is formed from a monocrystalline starting material, having an insulative layer formed beneath its surface by ion implantation or the equivalent, leaving a monocrystalline layer on the surface. The monocrystalline surface layer is then processed by preferential etching to accurately define components of the test structure. The substrate can be removed from the rear side of the insulative layer to form a transparent window, such that the test structure can be inspected by transmissive-optical techniques. Measurements made using electrical and optical techniques can be correlated with other measurements, including measurements made using scanning probe microscopy.

Abstract: A test structure for submicrometer metrology as used in integrated circuit manufacture comprises a bridge conductor divided into three segments by pairs of voltage taps. A first segment has no intermediate taps; a second segment has a number of dummy taps intermediate its ends; and a third segment has a single central tap, which may typically be formed in a different step than the remainder of the test structure, intermediate its ends. Preferably, the central tap extends from the same side of the bridge conductor as the taps at the ends of the third segment thereof. In order to evaluate a manufacturing operation, for example, to monitor the accuracy of registration of successive manufacturing steps, test signals are applied successively between the pairs of pads.

Abstract: An improved test structure for measurement of width of conductive lines formed on substrates as performed in semiconductor fabrication, and for calibrating instruments for such measurements, is formed from a monocrystalline starting material, having an insulative layer formed beneath its surface by ion implantation or the equivalent, leaving a monocrystalline layer on the surface. The monocrystalline surface layer is then processed by preferential etching to accurately define components of the test structure. The substrate can be removed from the rear side of the insulative layer to form a transparent window, such that the test structure can be inspected by transmissive-optical techniques. Measurements made using electrical and optical techniques can be correlated with other measurements, including measurements made using scanning probe microscopy.

Abstract: Imaging instruments for inspecting products, such as semiconductor chips, are calibrated by providing a reference test structure having features which can be located by electrical measurements not subject to tool-induced shift and wafer-induced shift experienced by the imaging instrument. The reference test structure is first qualified using electrical measurements, and is then used to calibrate the imaging instrument. The electrical measurements may be made by forcing a current between a plurality of spaced reference features and an underlying conductor, or may be made by capacitive, conductive, magnetic, or impedance-measuring techniques. Capacitive techniques may also be used to detect features not susceptible of resistance measurement, such as dielectric or insulative materials, or metallic structures not accessible for forcing a current therethrough.

Abstract: A test structure for submicrometer metrology as used in integral circuit manufacture comprises a bridge conductor divided into three segments by pairs of voltage taps. A first segment has no intermediate taps; a second segment has a number of dummy taps intermediate its ends; and a third segment has a single central tap, which may typically be formed in a different step than the remainder of the test structure, intermediate its ends. Preferably, the central tap extends from the same side of the bridge conductor as the taps at the ends of the third segment thereof. In order to evaluate a manufacturing operation, for example, to monitor the accuracy of registration of successive manufacturing steps, test signals are applied successively between the pairs of pads.

Abstract: A prepatterned potentiometer precursor includes a precursor substrate; and at least two spaced apart potentiometer precursor patterns on the substrate, each potentiometer precursor pattern including a bridge, two substantially similar end taps transverse to and extending from the bridge, and a center tap transverse to and extending from the bridge and centrally disposed between the end taps wherein the center taps of the bridges are substantially parallel to each other and are substantially wider than the end taps. A method of determining the distance between test features of test patterns on a test piece includes preparing a precursor substrate including at least two electrically conducting spaced apart potentiometer precursor patterns, each potentiometer precursor pattern including a bridge, two substantially similar end taps transverse to and extending from the bridge, and a center tap transverse to and extending from the bridge and centrally disposed between the end taps.

Abstract: A system which samples and records the locations of opaque particles accumulating on a surface. The system represents graphically the geometrical distributions of the particles through an integral electronic hardware/software subsystem. The key component is a radiant energy sensitive sensor which produces the sampling surface. The sensor is exposed to a constant level of radiant energy. Opaque particles becoming resident upon the sensor surface inhibit sensitization of the surface by the radiant energy and thereby indicates the presence and location of the particle. Embodiments of the sensor include charge coupled devices (CCDs), photodiode arrays, intrinsic or extrinsic "bulk" material, and optically- or UV-erasable memories.