Abstract: A method for preparing a volume of interest from a bulk sample uses a particle beam system configured to accommodate and to image the bulk sample and configured to provide a particle beam for the removal of material from the bulk sample. Moreover, the particle beam system is configured to define trimming regions. A trimming region determines location and size of a volume to be removed from the bulk sample.

Abstract: A method images a region of interest of a sample using a tomographic X-ray microscope. The method includes registering a position of the sample. Registering includes: imaging a portion of the sample containing a feature using the microscope, identifying the feature by matching the feature to a pre-recorded feature, and determining a relative position of the feature in relation to the pre-recorded feature. The method also includes navigating a field of view of the microscope over the region of interest based on the registered position of the sample, and imaging the region of interest using the microscope.

Abstract: A method of operating a microscope comprises recording a first image I1h of a sample, wherein the first image contains a first feature F1; recording a second image I2h of the sample, wherein the second image contains a second feature F2 arranged at a distance from the first feature; displacing the sample relative to the microscope by a displacement ; recording a third image I3h of the sample, wherein the third image contains the second feature; recording a fourth image I4h of the sample, wherein the fourth image contains a third feature F3 arranged at a distance from the second feature; and determining a position of the third feature relative to the first feature based on the first, second, third and fourth images.

Abstract: A method of operating a microscope comprises recording a first image I1h of a sample, wherein the first image contains a first feature F1; recording a second image I2h of the sample, wherein the second image contains a second feature F2 arranged at a distance from the first feature; displacing the sample relative to the microscope by a displacement ; recording a third image I3h of the sample, wherein the third image contains the second feature; recording a fourth image I4h of the sample, wherein the fourth image contains a third feature F3 arranged at a distance from the second feature; and determining a position of the third feature relative to the first feature based on the first, second, third and fourth images.

Abstract: A method of operating a microscope comprises recording a first image I1h of a sample, wherein the first image contains a first feature F1; recording a second image I2h of the sample, wherein the second image contains a second feature F2 arranged at a distance from the first feature; displacing the sample relative to the microscope by a displacement ; recording a third image I3h of the sample, wherein the third image contains the second feature; recording a fourth image I4h of the sample, wherein the fourth image contains a third feature F3 arranged at a distance from the second feature; and determining a position of the third feature relative to the first feature based on the first, second, third and fourth images.

Abstract: The disclosure provides a method for preparing a cross-section of a sample by milling with a focused ion beam. The cross-section is to be prepared at a pre-defined position. The method includes excavating a trench by milling in a first milling direction. The first milling direction leads away from the position of the cross-section to be prepared. The method also includes excavating the cross-section by enlarging the trench by milling in the reversed milling direction. The second milling direction leads towards the position of the cross-section to be prepared, whereupon the milling is completed at the position where the cross-section is to be cut. The desired largest milling depth is achieved at the completion of this milling step.

Abstract: The system described herein analyzes an object using a charged particle beam device, such as an electron beam device and/or an ion beam device. The charged particle beam device is used to generate high resolution 3D data sets by sequentially removing material from the object, exposing surfaces of the object and generating images of the surfaces. When removing material from the object, an opening having sides is generated. Lamellas are generated using the sides and material characteristics of those lamellas are identified. Moreover, filtered data is generated for each pixel of images of the sides of the opening. The method uses the information with respect to the identified material characteristics, the images of the sides and the filtered data of those images to obtain information on the material characteristics for each pixel of each surface generated when sequentially removing material from the object.

Abstract: A method for manufacturing a TEM-lamella is disclosed. The method includes: disposing a self-supporting protective structure on a surface of a substrate; bonding the protective structure to the substrate; cutting out a lamella from the substrate using a particle beam so that the lamella remains bonded to at least a portion of the protective structure; fastening a first tool to the lamella; and moving away the lamella from a residual portion of the substrate by moving the first tool relative to the substrate.

Abstract: The application relates to a method for analyzing, in particular for imaging, and/or processing of an object as well as a particle beam device for carrying out this method. In particular, the particle beam device of this application is an electron beam device and/or an ion beam device.

Abstract: The disclosure provides a method for preparing a cross-section of a sample by milling with a focused ion beam. The cross-section is to be prepared at a pre-defined position. The method includes excavating a trench by milling in a first milling direction. The first milling direction leads away from the position of the cross-section to be prepared. The method also includes excavating the cross-section by enlarging the trench by milling in the reversed milling direction. The second milling direction leads towards the position of the cross-section to be prepared, whereupon the milling is completed at the position where the cross-section is to be cut. The desired largest milling depth is achieved at the completion of this milling step.

Abstract: A particle beam device comprises a beam generator for generating a particle beam having charged particles and an electrode unit having a first electrode and a second electrode, wherein the first electrode interacts with the second electrode, in particular for guiding, shaping, aligning or correcting the particle beam. Moreover, the particle beam device comprises a low-pass filter being connected with at least one of: the first electrode and the second electrode, using an electrical connection. Additionally, the particle beam device comprises a mounting unit having an opening for the passage of the particle beam, wherein the at least one low-pass filter, the first electrode and the second electrode are arranged at the mounting unit. The electrode unit may comprise more than two electrodes, for example up to 16 electrodes.

Abstract: The application relates to a method for analyzing, in particular for imaging, and/or processing of an object as well as a particle beam device for carrying out this method. In particular, the particle beam device of this application is an electron beam device and/or an ion beam device.

Abstract: A method of operating a particle beam microscope includes: directing a particle beam onto a sample and detecting particles emanating from the sample during a first period for generating an image of the sample; generating electrons having a first distribution of kinetic energies and directing these electrons onto the sample during a second period for reducing a charge of the sample being generated while the directing the particle beam onto the sample; and generating electrons having a second distribution of their kinetic energies and directing these electrons onto the sample during a third period for further reducing the charge of the sample being generated while the directing of the particle beam onto the sample. An average value of the kinetic energy of the first distribution of the kinetic energy is greater than an average value of the kinetic energy of the second distribution of kinetic energies.

Abstract: A process for manufacturing a TEM-lamella includes mounting (51) a plate shaped substrate having a thickness in a support, manufacturing (53) a first, strip-shaped recess on a first side of the substrate under a first angle to the support by means of a particle beam, and manufacturing (55) a second strip-shaped recess on a second side of the substrate under a second angle to the support by means of a particle beam, such that the first and the second strip-shaped recess mutually form an acute or right angle, and between them form an overlap region of lesser thickness. The lamella has a thicker rim region and a thinner central region, with a first strip-shaped, recess on a first side of the lamella and a second strip-shaped recess on a second side of the lamella, wherein the first and the second strip-shaped recess mutually form an acute or right angle, and between them form an overlap region having a thickness of below 100 nm.

Abstract: A method for manufacturing a TEM-lamella is disclosed. The method includes: disposing a self-supporting protective structure on a surface of a substrate; bonding the protective structure to the substrate; cutting out a lamella from the substrate using a particle beam so that the lamella remains bonded to at least a portion of the protective structure; fastening a first tool to the lamella; and moving away the lamella from a residual portion of the substrate by moving the first tool relative to the substrate.

Abstract: A method of operating a particle beam microscope includes: directing a particle beam onto a sample and detecting particles emanating from the sample during a first period for generating an image of the sample; generating electrons having a first distribution of kinetic energies and directing these electrons onto the sample during a second period for reducing a charge of the sample being generated while the directing the particle beam onto the sample; and generating electrons having a second distribution of their kinetic energies and directing these electrons onto the sample during a third period for further reducing the charge of the sample being generated while the directing of the particle beam onto the sample. An average value of the kinetic energy of the first distribution of the kinetic energy is greater than an average value of the kinetic energy of the second distribution of kinetic energies.

Abstract: A method and apparatus, the method including: forming a recess in a graphene layer wherein the recess creates a boundary between a first portion of the graphene layer and a second portion of the graphene layer; depositing electrically insulating material within the recess; and depositing an electrically conductive material over the insulating material.

Abstract: A method of processing a TEM-sample, wherein the method comprises: mounting an object in a particle beam system such that the object is disposed, in an object region of the particle beam system; directing of a first particle beam onto the object region from a first direction, wherein the first particle beam is an ion beam; and then rotating the object about an axis by 180°, wherein the following relation is fulfilled: 35°???55°, wherein ? denotes a first angle between the first direction and the axis; and then directing of the first particle beam onto the object region from the first direction; wherein material is removed from the object during the directing of the first particle beam onto the object region. Furthermore, a second particle beam may be directed onto the object region, and particles emanating from the object region can be detected.

Abstract: A method of processing a TEM-sample, wherein the method comprises: mounting an object in a particle beam system such that the object is disposed, in an object region of the particle beam system; directing of a first particle beam onto the object region from a first direction, wherein the first particle beam is an ion beam; and then rotating the object about an axis by 180°, wherein the following relation is fulfilled: 35°???55°, wherein ? denotes a first angle between the first direction and the axis; and then directing of the first particle beam onto the object region from the first direction; wherein material is removed from the object during the directing of the first particle beam onto the object region. Furthermore, a second particle beam may be directed onto the object region, and particles emanating from the object region can be detected.

Abstract: A process for manufacturing a TEM-lamella includes mounting (51) a plate shaped substrate having a thickness in a support, manufacturing (53) a first, strip-shaped recess on a first side of the substrate under a first angle to the support by means of a particle beam, and manufacturing (55) a second strip-shaped recess on a second side of the substrate under a second angle to the support by means of a particle beam, such that the first and the second strip-shaped recess mutually form an acute or right angle, and between them form an overlap region of lesser thickness. The lamella has a thicker rim region and a thinner central region, with a first strip-shaped, recess on a first side of the lamella and a second strip-shaped recess on a second side of the lamella, wherein the first and the second strip-shaped recess mutually form an acute or right angle, and between them form an overlap region having a thickness of below 100 nm.