Patents by Inventor Lorenzo Zini
Lorenzo Zini has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11916166Abstract: An optoelectronic device may include an optoelectronic semiconductor chip that is configured to emit electromagnetic radiation. The chip may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and a plurality of electrical contact elements. The first current spreading layer may be arranged on a side of the second semiconductor layer facing away from the first semiconductor layer. The plurality of electrical contact elements may electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer may be electrically connected to the second semiconductor layer. The second current spreading layer may be arranged between the first current spreading layer and the second semiconductor layer where an insulating layer insulates a first electrical contact element and a second electrical contact element from the second current spreading layer.Type: GrantFiled: May 8, 2019Date of Patent: February 27, 2024Assignee: Osram OLED GmbHInventors: Roland Heinrich Enzmann, Christian Mueller, Stefan Barthel, Vanessa Eichinger, Marc Christian Nenstiel, Lorenzo Zini
-
Patent number: 11456404Abstract: An optoelectronic semiconductor chip may include a semiconductor body, a first and second contact element, a chip carrier, an electrically conductive contact layer, an electrically conductive supply layer, an insulating layer between the contact layer and the supply layer, and at least one electrically conductive feed-through element embedded in the insulating layer. The feed-through element(s) may electrically connect the supply layer to the contact layer. A quantity and/or size of the feed-through elements may be greater on a second side of the semiconductor body opposite to the first side than on the first side.Type: GrantFiled: October 25, 2018Date of Patent: September 27, 2022Assignee: OSRAM OLED GmbHInventors: Roland Heinrich Enzmann, Lorenzo Zini, Vanessa Eichinger, Stefan Barthel
-
Patent number: 11195974Abstract: A semiconductor chip may include a substrate and a semiconductor body positioned thereon. The semiconductor body has a first semiconductor layer and a second semiconductor layer with an active zone sandwiched therebetween. At least one current spreading layer is designed to electrically contact the first semiconductor layer positioned between the substrate and the semiconductor body. A metal layer is designed to electrically contact the second semiconductor layer positioned between the substrate and the current spreading layer where the metal layer fully covers the current spreading layer. An insulating layer may be positioned between the current spreading layer and the metal layer in the vertical direction to where the metal layer is electrically insulated from the current spreading layer.Type: GrantFiled: September 25, 2018Date of Patent: December 7, 2021Assignee: OSRAM OLED GMBHInventors: Roland Heinrich Enzmann, Lorenzo Zini, Vanessa Eichinger, Jochen Brendt
-
Publication number: 20210265525Abstract: An optoelectronic device may include an optoelectronic semiconductor chip that is configured to emit electromagnetic radiation. The chip may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and a plurality of electrical contact elements. The first current spreading layer may be arranged on a side of the second semiconductor layer facing away from the first semiconductor layer. The plurality of electrical contact elements may electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer may be electrically connected to the second semiconductor layer. The second current spreading layer may be arranged between the first current spreading layer and the second semiconductor layer where an insulating layer insulates a first electrical contact element and a second electrical contact element from the second current spreading layer.Type: ApplicationFiled: May 8, 2019Publication date: August 26, 2021Applicant: Osram OLED GmbHInventors: Roland Heinrich ENZMANN, Christian MUELLER, Stefan BARTHEL, Vanessa EICHINGER, Marc Christian NENSTIEL, Lorenzo ZINI
-
Patent number: 11031534Abstract: A radiation emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a carrier including a first main surface and a second main surface opposite to the first main surface, an n-doped layer and a p-doped layer forming a pn-junction and a vertical region starting from the first main surface and running parallel to side faces of the carrier, wherein the vertical region is n-doped, p-doped or electrically insulating, and wherein the vertical region extends within a boundary region of the carrier and completely encloses a central volume region of the carrier, an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation, the epitaxial semiconductor layer sequence being located at the first main surface of the carrier and two electrical contacts disposed on a front side of the semiconductor chip.Type: GrantFiled: March 1, 2018Date of Patent: June 8, 2021Assignee: OSRAM OLED GMBHInventors: Roland Heinrich Enzmann, Lorenzo Zini, Christian Müller
-
Publication number: 20200287089Abstract: A semiconductor chip may include a substrate and a semiconductor body positioned thereon. The semiconductor body has a first semiconductor layer and a second semiconductor layer with an active zone sandwiched therebetween. At least one current spreading layer is designed to electrically contact the first semiconductor layer positioned between the substrate and the semiconductor body. A metal layer is designed to electrically contact the second semiconductor layer positioned between the substrate and the current spreading layer where the metal layer fully covers the current spreading layer. An insulating layer may be positioned between the current spreading layer and the metal layer in the vertical direction to where the metal layer is electrically insulated from the current spreading layer.Type: ApplicationFiled: September 25, 2018Publication date: September 10, 2020Inventors: Roland Heinrich Enzmann, Lorenzo Zini, Vanessa Eichinger, Jochen Brendt
-
Patent number: 10770442Abstract: A display device is disclosed. In an embodiment a display device includes a carrier including a plurality of switches, a semiconductor layer sequence arranged on the carrier, the semiconductor layer sequence comprising an active region configured to generate primary radiation and forming a plurality of pixels, wherein each switch is configured to control at least one pixel and an optical element arranged on each pixel on a radiation exit surface of the semiconductor layer sequence facing away from the carrier.Type: GrantFiled: January 8, 2018Date of Patent: September 8, 2020Assignee: OSRAM OLED GMBHInventors: Lorenzo Zini, Martin Rudolf Behringer
-
Publication number: 20200251639Abstract: An optoelectronic semiconductor chip may include a semiconductor body, a first and second contact element, a chip carrier, an electrically conductive contact layer, an electrically conductive supply layer, an insulating layer between the contact layer and the supply layer, and at least one electrically conductive feed-through element embedded in the insulating layer. The feed-through element(s) may electrically connect the supply layer to the contact layer. A quantity and/or size of the feed-through elements may be greater on a second side of the semiconductor body opposite to the first side than on the first side.Type: ApplicationFiled: October 25, 2018Publication date: August 6, 2020Inventors: Roland Heinrich ENZMANN, Lorenzo ZINI, Vanessa EICHINGER, Stefan BARTHEL
-
Patent number: 10629486Abstract: According to the present disclosure, a method for producing a plurality of semiconductor chips is provided with the following steps: a) providing a composite assembly, including a carrier, a semiconductor layer sequence and a functional layer; b) severing the functional layer by means of coherent radiation along a singulation pattern; c) forming separating trenches in the carrier along the singulation pattern; and d) applying a protective layer, which delimits the functional layer toward the separating trenches, on in each case at least one side surface of the semiconductor chips to be singulated. The singulated semiconductor chips each includes a part of the semiconductor layer sequence, of the carrier and of the functional layer.Type: GrantFiled: January 11, 2016Date of Patent: April 21, 2020Assignee: OSRAM OLED GmbHInventors: Michael Huber, Lorenzo Zini
-
Publication number: 20200091387Abstract: A radiation emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a carrier including a first main surface and a second main surface opposite to the first main surface, an n-doped layer and a p-doped layer forming a pn-junction and a vertical region starting from the first main surface and running parallel to side faces of the carrier, wherein the vertical region is n-doped, p-doped or electrically insulating, and wherein the vertical region extends within a boundary region of the carrier and completely encloses a central volume region of the carrier, an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation, the epitaxial semiconductor layer sequence being located at the first main surface of the carrier and two electrical contacts disposed on a front side of the semiconductor chip.Type: ApplicationFiled: March 1, 2018Publication date: March 19, 2020Inventors: Roland Heinrich Enzmann, Lorenzo Zini, Christian Müller
-
Publication number: 20190371774Abstract: A display device is disclosed. In an embodiment a display device includes a carrier including a plurality of switches, a semiconductor layer sequence arranged on the carrier, the semiconductor layer sequence comprising an active region configured to generate primary radiation and forming a plurality of pixels, wherein each switch is configured to control at least one pixel and an optical element arranged on each pixel on a radiation exit surface of the semiconductor layer sequence facing away from the carrier.Type: ApplicationFiled: January 8, 2018Publication date: December 5, 2019Inventors: Lorenzo Zini, Martin Rudolf Behringer
-
Patent number: 10411155Abstract: A method of producing optoelectronic semiconductor chips includes growing a semiconductor layer sequence on a growth substrate; applying at least one metallization to a contact side of the semiconductor layer sequence, which contact side faces away from the growth substrate; attaching an intermediate carrier to the semiconductor layer sequence, wherein a sacrificial layer is attached between the intermediate carrier and the semiconductor layer sequence; removing the growth substrate from the semiconductor layer sequence; structuring the semiconductor layer sequence into individual chip regions; at least partially dissolving the sacrificial layer; and subsequently removing the intermediate carrier, wherein, in removing the intermediate carrier, part of the sacrificial layer is still present, removing the intermediate carrier includes mechanically breaking remaining regions of the sacrificial layer, and the sacrificial layer is completely removed after removing the intermediate carrier.Type: GrantFiled: July 23, 2015Date of Patent: September 10, 2019Assignee: OSRAM Opto Semiconductors GmbHInventors: Lorenzo Zini, Alexander Frey, Joachim Hertkorn, Berthold Hahn
-
Patent number: 10354865Abstract: A method for procuring a nitride compound semiconductor device is disclosed. In an embodiment the method includes growing a first nitride compound semiconductor layer onto a growth substrate, depositing a masking layer, growing a second nitride compound semiconductor layer onto the masking layer, growing a third nitride compound semiconductor layer onto the second nitride compound semiconductor layer such that the third nitride compound semiconductor layer has non-planar structures and growing a fourth nitride compound semiconductor layer onto the non-planar structures such that the fourth nitride compound semiconductor layer has an essentially planar surface. The method further includes growing a functional layer sequence of the nitride compound semiconductor device, connecting a side of the functional layer sequence located opposite to the growth substrate to a carrier and removing the growth substrate.Type: GrantFiled: May 11, 2016Date of Patent: July 16, 2019Assignee: OSRAM Opto Semiconductors GmbHInventors: Joachim Hertkorn, Lorenzo Zini, Alexander Frey
-
Patent number: 10121775Abstract: Described is an optoelectronic semiconductor chip (1) with a built-in bridging element (9, 9A) for overvoltage protection.Type: GrantFiled: November 7, 2014Date of Patent: November 6, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Christian Leirer, Berthold Hahn, Karl Engl, Johannes Baur, Siegfried Herrmann, Andreas Ploessl, Simeon Katz, Tobias Meyer, Lorenzo Zini, Markus Maute
-
Publication number: 20180144933Abstract: A method for procuring a nitride compound semiconductor device is disclosed. In an embodiment the method includes growing a first nitride compound semiconductor layer onto a growth substrate, depositing a masking layer, growing a second nitride compound semiconductor layer onto the masking layer, growing a third nitride compound semiconductor layer onto the second nitride compound semiconductor layer such that the third nitride compound semiconductor layer has non-planar structures and growing a fourth nitride compound semiconductor layer onto the non-planar structures such that the fourth nitride compound semiconductor layer has an essentially planar surface. The method further includes growing a functional layer sequence of the nitride compound semiconductor device, connecting a side of the functional layer sequence located opposite to the growth substrate to a carrier and removing the growth substrate.Type: ApplicationFiled: May 11, 2016Publication date: May 24, 2018Inventors: Joachim Hertkorn, Lorenzo Zini, Alexander Frey
-
Patent number: 9923130Abstract: An optoelectronic semiconductor component has at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has at least one side surface and wherein a part of the electromagnetic radiation exits through the side surface during operation of the semiconductor chip. The semiconductor component additionally has at least one deflecting element that is formed to be transmissive to radiation. The deflecting element and the semiconductor chip are arranged one alongside another. The deflecting element is arranged at the side surface of the semiconductor chip. The deflecting element has a material, the index of refraction of which is greater than an average index of refraction of a semiconductor material of the semiconductor chip.Type: GrantFiled: March 7, 2014Date of Patent: March 20, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Lorenzo Zini, Tobias Meyer
-
Publication number: 20180012801Abstract: According to the present disclosure, a method for producing a plurality of semiconductor chips is provided with the following steps: a) providing a composite assembly, including a carrier, a semiconductor layer sequence and a functional layer; b) severing the functional layer by means of coherent radiation along a singulation pattern; c) forming separating trenches in the carrier along the singulation pattern; and d) applying a protective layer, which delimits the functional layer toward the separating trenches, on in each case at least one side surface of the semiconductor chips to be singulated. The singulated semiconductor chips each includes a part of the semiconductor layer sequence, of the carrier and of the functional layer.Type: ApplicationFiled: January 11, 2016Publication date: January 11, 2018Applicant: OSRAM Opto Semiconductors GmbHInventors: Michael Huber, Lorenzo Zini
-
Patent number: 9865776Abstract: The invention relates to a method for separating regions of a semiconductor layer and for introducing an outcoupling structure into an upper side of the semiconductor layer, the outcoupling structure being provided to couple light out of the semiconductor layer. The upper side of the semiconductor layer is covered by a mask having first openings for introducing the outcoupling structure and at least a second opening, which is provided to introduce a separating trench into the semiconductor layer. With the aid of an etching method, the outcoupling structure is introduced into the upper side of the semiconductor layer in the region of the first openings and simultaneously a separating trench passing through the semiconductor layer is introduced into the semiconductor layer via the second opening, and a region of the semiconductor layer is separated.Type: GrantFiled: January 23, 2017Date of Patent: January 9, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Lorenzo Zini, Bernd Boehm
-
Publication number: 20170207363Abstract: A method of producing optoelectronic semiconductor chips includes growing a semiconductor layer sequence on a growth substrate; applying at least one metallization to a contact side of the semiconductor layer sequence, which contact side faces away from the growth substrate; attaching an intermediate carrier to the semiconductor layer sequence, wherein a sacrificial layer is attached between the intermediate carrier and the semiconductor layer sequence; removing the growth substrate from the semiconductor layer sequence; structuring the semiconductor layer sequence into individual chip regions; at least partially dissolving the sacrificial layer; and subsequently removing the intermediate carrier, wherein, in removing the intermediate carrier, part of the sacrificial layer is still present, removing the intermediate carrier includes mechanically breaking remaining regions of the sacrificial layer, and the sacrificial layer is completely removed after removing the intermediate carrier.Type: ApplicationFiled: July 23, 2015Publication date: July 20, 2017Inventors: Lorenzo Zini, Alexander Frey, Joachim Hertkorn, Berthold Hahn
-
Patent number: 9680048Abstract: A method for producing a radiation-emitting semiconductor component is provided, comprising the following steps: —providing a growth substrate (1), —depositing a nucleation layer (2) on the growth substrate (1), —applying a structured dielectric layer (3) to the nucleation layer (2), —applying an epitaxial layer (4) by means of a FACELO process to the structured dielectric layer (3), —epitaxial growth of an epitaxial layer sequence (5) on the epitaxial layer (4), wherein the epitaxial layer sequence (5) comprises an active zone (6) that is suitable for producing electromagnetic radiation.Type: GrantFiled: January 10, 2013Date of Patent: June 13, 2017Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Joachim Hertkorn, Lorenzo Zini