Patents by Inventor Lori Stirling

Lori Stirling has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having a metal gate with a work function compatible with a semiconductor device
    Patent number: 6579775
    Abstract: The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electrode material having a work function compatible with the first transistor, and a second gate electrode that includes a second metal gate electrode material having a work function compatible with the second transistor and the first metal gate electrode material is also located over the second metal gate electrode material, which forms a gate stack.
    Type: Grant
    Filed: October 24, 2001
    Date of Patent: June 17, 2003
    Assignee: Agere Systems Inc.
    Inventors: Isik C. Kizilyalli, Ranbir Singh, Lori Stirling
  • Semiconductor device having a metal gate with a work function compatible with a semiconductor device
    Patent number: 6573149
    Abstract: The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electrode material having a work function compatible with the first transistor, and a second gate electrode that includes a second metal gate electrode material having a work function compatible with the second transistor and the first metal gate electrode material is also located over the second metal gate electrode material, which forms a gate stack.
    Type: Grant
    Filed: August 27, 2001
    Date of Patent: June 3, 2003
    Assignee: Agere Systems Inc.
    Inventors: Isik C. Kizilyalli, Ranbir Singh, Lori Stirling
  • Semiconductor device having a metal gate with a work function compatible with a semiconductor device
    Publication number: 20020086491
    Abstract: The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electrode material having a work function compatible with the first transistor, and a second gate electrode that includes a second metal gate electrode material having a work function compatible with the second transistor and the first metal gate electrode material is also located over the second metal gate electrode material, which forms a gate stack.
    Type: Application
    Filed: October 24, 2001
    Publication date: July 4, 2002
    Applicant: Lucent Technologies Inc.
    Inventors: Isik C. Kizilyalli, Ranbir Singh, Lori Stirling
  • Semiconductor device having a metal gate with a work function compatible with a semiconductor device
    Patent number: 6383879
    Abstract: The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electrode material having a work function compatible with the first transistor, and a second gate electrode that includes a second metal gate electrode material having a work function compatible with the second transistor and the first metal gate electrode material is also located over the second metal gate electrode material, which forms a gate stack.
    Type: Grant
    Filed: May 17, 2000
    Date of Patent: May 7, 2002
    Assignee: Agere Systems Guardian Corp.
    Inventors: Isik C. Kizilyalli, Ranbir Singh, Lori Stirling
  • Semiconductor device having a metal gate with a work function compatible with a semiconductor device
    Publication number: 20020048893
    Abstract: The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electrode material having a work function compatible with the first transistor, and a second gate electrode that includes a second metal gate electrode material having a work function compatible with the second transistor and the first metal gate electrode material is also located over the second metal gate electrode material, which forms a gate stack.
    Type: Application
    Filed: August 27, 2001
    Publication date: April 25, 2002
    Inventors: Isik C. Kizilyalli, Ranbir Singh, Lori Stirling