Abstract: A photo-transistor in MOS thin-film technology operable with alternating voltages is comprised of a semiconductor body (3) composed of polycrystalline silicon having source (4) and drain (5) zones therein spaced apart by an undoped channel region (13) and having a gate electrode (1, 10) separated from the semiconductor body (3) by a SiO.sub.2 layer (2) produced by thermal oxidation. These phototransistors are easily and reproducably produced and are characterized by low threshold voltages and a good transistor characteristic curve. Thus, these photo-transistors are well suited for use as sensor elements, opto-couplers, time-delay elements and as photo-transistors in VLSI circuits.

Abstract: In an exemplary embodiment, an electrical charge image is scanned by a matrix of integrated MOS components with a floating gate (or a switched floating gate), functioning as a matrix of potential sensors, to produce an image signal for display on a video screen. A minimum field effect transistor with source-follower circuitry is preferably employed as the potential sensor; the sensor outputs are linked to a shift register. The new component is suitable for employment for potential measurements in X-ray diagnostics.

Abstract: An x-y infrared CCD sensor employing the photoelectric effect as in a p-doped semiconductor substrate of silicon with an n.sup.+ pn diode as the infrared sensor element with a three layer structure in the vertical direction in the semiconductor substrate and a n-channel charge coupled device shift register. The device has a metal-oxide-semiconductor storage electrode directly adjacent to the n-region of the three layer structure. The device is manufactured by masked ion implantation with the doping density for the three layer sequence such that the doping density for the layer operating as the emitter is greater than the doping density for the layer operating as a base, which in turn is greater than the doping density for the layer operating as the collector.

Abstract: Fast surface states in MOS devices, such as SCCDs, are reduced by depositing a relatively thin amorphous layer containing silicon and hydrogen onto the SiO.sub.2 surface of such devices and annealing the resultant device in a non-oxidizing atmosphere for brief periods of time at a temperature in excess of the deposition temperature for the amorphous layer but below about 500.degree. C. so that free valences at the Si-SiO.sub.2 interface region are saturated with hydrogen. Surface state densities of about 4.times.10.sup.8 cm.sup.-2 eV.sup.-1 and SCCDs having .epsilon.=1.10.sup.-5 can be achieved via this process. The process is useful in producing SCCDs with low surface state densities and other MOS devices having low surface generated dark currents.