Abstract: Integration and packaging of monolithic microwave integrated circuits (MMIC) components is facilitated by using a motherboard comprising high resistivity silicon, which having a thermal conductivity three times that of gallium arsenide. Ultra high purity, uncompensated silicon preferably is used. Anisotropic etching of recesses in the motherboard facilitates precise placement of the MMICs in the recesses, enabling use of automated die and wire bonding techniques to reduce required assembly time substantially. Using a silicon motherboard also ultimately enables incorporation of required control circuitry. The silicon motherboard also transmits RF energy well, a useful characteristic particularly in C-band and X-band applications in which microstrip is used, though other transmission media function well at even higher frequencies.

Abstract: A microwave integrated circuit, comprised of one or more Josephson junctions and short sections of microstrip or stripline transmission line, is fabricated from thin layers of superconducting metal on a dielectric substrate. The short sections of transmission line are combined to form the elements of the circuit, and particularly, two microwave resonators. The Josephson junctions are located between the resonators, and the impedance of the Josephson junctions forms part of the circuitry that couples the two resonators. The microwave integrated circuit has an application in Josephson voltage standards. In this application, the device is asymmetrically driven at a selected frequency (approximately equal to the resonance frequency of the resonators), and a D.C. bias is applied to the junction. By observing the current-voltage characteristic of the junction, a precise voltage, proportional to the frequency of the microwave drive signal, is obtained.

Abstract: Porous copper workpieces are obtained byA. obtaining a copper workpiece having a selected grain size;B. machining the workpiece to a selected size and shape;C. electrochemically polishing said workpiece;D. annealing said workpiece from step (c) in oxygen at a temperature from 750.degree. to 1080.degree. C. and a pressure of 10.sup.-4 - 10.sup.2 Torr; andE. annealing said workpiece from step (d) in hydrogen.