Abstract: A single-electron transistor includes a projecting feature, such as a pyramid, that projects from a face of a substrate. A first electrode is provided on the substrate face that extends onto the projecting feature. A second electrode is provided on the substrate face that extends onto the projecting feature and that is spaced apart from the first electrode. Accordingly, the geometric configuration of the projecting feature can define the spacing between the first and second electrodes. At least one nanoparticle is provided on the projecting feature between the first and second electrodes.

Abstract: A molecule is wired into an electronic circuit by attaching a metal nanoparticle to the molecule and then electrically connecting a metal nanoparticle to the electric circuit. The metal nanoparticle interconnects can bridge the gap between small molecules and conventional electric circuits. An optical second harmonic also may be generated by impinging optical radiation having a first frequency on an array of molecularly bridged metal nanoparticles, to generate optical energy at a second frequency that is twice the first frequency. Red to blue light conversion thereby may be provided.

Abstract: Single-electron transistors include first and second electrodes and an insulating layer between them on a substrate. The insulating layer has a thickness that defines a spacing between the first and second electrodes. At least one nanoparticle is provided on the insulating layer. Accordingly, a desired spacing between the first and second electrodes may be obtained without the need for high resolution photolithography. An electrically-gated single-electron transistor may be formed, wherein a gate electrode is provided on the at least nanoparticle opposite the insulating layer end. Alternatively, a chemically-gated single-electron transistor may be formed by providing an analyte-specific binding agent on a surface of the at least one nanoparticle. Arrays of single-electron transistors also may be formed on the substrate.

Abstract: A single-electron transistor includes a projecting feature, such as a pyramid, that projects from a face of a substrate. A first electrode is provided on the substrate face that extends onto the projecting feature. A second electrode is provided on the substrate face that extends onto the projecting feature and that is spaced apart from the first electrode. At least one nanoparticle is provided on the projecting feature between the first and second electrodes. Accordingly, the geometric configuration of the projecting feature can define the spacing between the first and second electrodes.

Abstract: Nanopores for single-electron devices may be used as templates for placing of a desired number of nanoparticles at a desired location in the devices. Nanopores may be fabricated by providing on a substrate spaced apart electrode regions, a spacer region therebetween, and a cover layer on the spaced apart electrode regions and on the spacer region. A wet etching solution is contacted to the cover-layer. At least one of the spaced apart electrode regions is energized, to selectively wet etch the cover layer adjacent the spacer region and define a nanopore in the cover layer adjacent the spacer region. At least one nanoparticle is placed in the nanopore. Accordingly, nanopores can be aligned to a buried spacer region.

Abstract: Nanopores for single-electron devices may be used as templates for placing of a desired number of nanoparticles at a desired location in the devices. Nanopores may be fabricated by providing on a substrate spaced apart electrode regions, a spacer region therebetween, and a cover layer on the spaced apart electrode regions and on the spacer region. A wet etching solution is contacted to the cover layer. At least one of the spaced apart electrode regions is energized, to selectively wet etch the cover layer adjacent the spacer region and define a nanopore in the cover layer adjacent the spacer region. At least one nanoparticle is placed in the nanopore. Accordingly, nanopores can be aligned to a buried spacer region.

Abstract: A single-electron transistor includes a projecting feature, such as a pyramid, that projects from a face of a substrate. A first electrode is provided on the substrate face that extends onto the projecting feature. A second electrode is provided on the substrate face that extends onto the projecting feature and that is spaced apart from the first electrode. At least one nanoparticle is provided on the projecting feature between the first and second electrodes. Accordingly, the geometric configuration of the projecting feature can define the spacing between the first and second electrodes.

Abstract: A molecule is wired into an electronic circuit by attaching a metal nanoparticle to the molecule and then electrically connecting a metal nanoparticle to the electric circuit. The metal nanoparticle interconnects can bridge the gap between small molecules and conventional electric circuits. An optical second harmonic also may be generated by impinging optical radiation having a first frequency on an array of molecularly bridged metal nanoparticles, to generate optical energy at a second frequency that is twice the first frequency. Red to blue light conversion thereby may be provided.

Abstract: Single-electron transistors include first and second electrodes and an insulating layer between them on a substrate. The insulating layer has a thickness that defines a spacing between the first and second electrodes. At least one nanoparticle is provided on the insulating layer. Accordingly, a desired spacing between the first and second electrodes may be obtained without the need for high resolution photolithography. An electrically-gated single-electron transistor may be formed, wherein a gate electrode is provided on the at least nanoparticle opposite the insulating layer end. Alternatively, a chemically-gated single-electron transistor may be formed by providing an analyte-specific binding agent on a surface of the at least one nanoparticle. Arrays of single-electron transistors also may be formed on the substrate.

Abstract: A single-electron transistor includes a projecting feature, such as a pyramid, that projects from a face of a substrate. A first electrode is provided on the substrate face that extends onto the projecting feature. A second electrode is provided on the substrate face that extends onto the projecting feature and that is spaced apart from the first electrode. At least one nanoparticle is provided on the projecting feature between the first and second electrodes. Accordingly, the geometric configuration of the projecting feature can define the spacing between the first and second electrodes.

Abstract: Single-electron transistors include first and second electrodes and an insulating layer between them on a substrate. The insulating layer has a thickness that defines a spacing between the first and second electrodes. At least one nanoparticle is provided on the insulating layer. Accordingly, a desired spacing between the first and second electrodes may be obtained without the need for high resolution photolithography. An electrically-gated single-electron transistor may be formed, wherein a gate electrode is provided on the at least nanoparticle opposite the insulating layer end. Alternatively, a chemically-gated single-electron transistor may be formed by providing an analyte-specific binding agent on a surface of the at least one nanoparticle. Arrays of single-electron transistors also may be formed on the substrate.