Abstract: A method for measuring the surface potential of a polarized sample includes: measuring the topographic profile of the sample by scanning its surface with a tapered tip connected to a micro-lever activated at the resonance frequency of same by a piezoelectric actuator; placing the tapered tip a constant distance away from the topographic profile of the surface obtained during the previous step; and measuring the electrostatic potential of the surface. The sample is not polarized during the step of measuring the topographic profile. The sample is polarized during the measurement of the potential profile.

Abstract: The present invention relates to a monolithic optical component (400) comprising a light-absorbing layer and a waveguide structure (2). The invention is more particularly adapted to a monolithic component (400) comprising an evanescent coupling photodiode (6) integrated with the waveguide (2). The monolithic optical component (400) comprises a light-absorbing layer and a waveguide (2) evanescently coupled with the light-absorbing layer, the waveguide (2) having one end coupled to an input face (12) of the component to receive an input wave, the 10 component (400) being characterized in that the input face is convex.

Abstract: The present invention relates to a monolithic optical component (400) comprising a light-absorbing layer and a waveguide structure (2). The invention is more particularly adapted to a monolithic component (400) comprising an evanescent coupling photodiode (6) integrated with the waveguide (2). The monolithic optical component (400) comprises a light-absorbing layer and a waveguide (2) evanescently coupled with the light-absorbing layer, the waveguide (2) having one end coupled to an input face (12) of the component to receive an input wave, the 10 component (400) being characterized in that the input face is convex.

Abstract: To reduce the capacitance of an electronic module having an active component (1) bonded to a base (2), thereby enabling its cutoff frequency to be raised, the method provides a plurality of contact pads (P1, P?1, P2, P3, P?3) and a plurality of contact zones (Z1, Z?1, Z2, Z3, Z?3) on the component and on the base respectively. First structures (P1, P?1, Z1, Z?1) are adapted to be bonded together by melting solder. Second structures (P2, Z2) of small surface area are designed to be bonded together by thermal compression delivered by the mutual force of attraction that results between the component and the base due to the solder melting. The invention is particularly applicable to making optoelectronic components used in high data rate optical transmission systems.

Abstract: In order to reduce the capacitance of an electronic module comprising an active component (1) bonded to a base (2), thereby enabling its cutoff frequency to be raised, the method consists in providing a plurality of contact pads (P1, P′1, P2, P3, P′3) and a plurality of contact zones (Z1, Z′1, Z2, Z3, Z′3) on the component and on the base respectively. First structures (P1, P′1, Z1, Z′1) are adapted to be bonded together by melting solder. Second structures (P2, Z2) of small surface area are designed to be bonded together by thermal compression delivered by the mutual force of attraction that results between the component and the base due to the solder melting. The invention is particularly applicable to making optoelectronic components used in high data rate optical transmission systems.

Abstract: The invention relates to a process for making a monolithic integrated structure comprising two opto-electronic components (K, D1) connected optically by an optical guide.It comprises the step consisting in making in situ between the two opto-electronic components at least one electrically insulating barrier (40) able to allow transmission of light between them, by one of the following means: localized doping with an element of conductivity of a given type, of a region of the structure of opposite conductivity type, epitaxial deposition of a layer of semi-insulating material.

Abstract: A semiconductor opto-electronic device including at least one electronic function component (62), at least one optical function component (60) and a mode transformer associated with the optical function component. At least some layers of semiconductor material constituting the electronic function component also form optical layers in the mode transformer zone and, at least in the mode transformer zone, these semiconductor material layers are non-absorbent at the operating wavelength. The mode transformer is preferably etched in the shape of an hourglass.