Abstract: A method for depositing an inorganic perovskite layer, comprising the following steps: providing a substrate and an inorganic target; positioning the substrate and the target in a close-space sublimation furnace; depositing an inorganic perovskite layer onto the substrate by sublimation of the target.

Abstract: Method for depositing an organic or hybrid organic/inorganic perovskite layer on a substrate comprising the following steps: a) providing a substrate and an organic or hybrid organic/inorganic target, b) positioning the substrate and the target, in a close space sublimation furnace, c) depositing an organic or hybrid organic/inorganic perovskite layer on the substrate by sublimation of the target, the temperature difference between the target and the substrate being, preferably, comprised between 50° C. and 350° C., even more preferentially between 50° C. and 200° C., the thickness of the deposited organic or hybrid organic/inorganic perovskite layer being, preferably, comprised between 50 nm and 5000 ?m.

Abstract: An arrangement for a thin-film photovoltaic cell stack comprises a substrate layer for a photovoltaic cell and a molybdenum grid positioned on the substrate layer, an ultra-thin alloy layer made of copper, indium, gallium and selenium positioned on the molybdenum grid, and a buffer layer positioned on the ultra-thin alloy layer made of copper, indium, gallium and selenium and a window layer positioned on the buffer layer.

Abstract: A method for producing a P-N junction in a thin film photovoltaic cell comprising a deposition step in which are carried out successively: a layer of precursors of a photovoltaic material of type P or N, a barrier layer and a layer of precursors of a semiconducting material of type N or P, this deposition step being followed by an annealing step carried out with a supply of S and/or Se, this annealing step leading to the formation of an absorbing layer of the type P or N and of a buffer layer of type N or P and of a P-N junction at the interface between said layers.

Abstract: The invention relates to a process for producing a p-n junction in a photovoltaic cell made of thin CZTS-based films, comprising: a) a step of depositing a film of precursors containing zinc, tin and copper, the amount of zinc being larger than that required to convert the precursors into a CZTS type photovoltaic material and b) a step of annealing the precursors, under a sulphur- and/or selenium-containing atmosphere, so as to obtain a photovoltaic film made of CZTS and a buffer layer made of ZnS1-xSex, where x is comprised between 0 and 1.

Abstract: A method for producing a P-N junction in a thin film photovoltaic cell comprising a deposition step in which are carried out successively: a layer of precursors of a photovoltaic material of type P or N, a barrier layer and a layer of precursors of a semiconducting material of type N or P, this deposition step being followed by an annealing step carried out with a supply of S and/or Se, this annealing step leading to the formation of an absorbing layer of the type P or N and of a buffer layer of type N or P and of a P-N junction at the interface between said layers.

Abstract: An arrangement for a stack of a photovoltaic cell comprises a first photon-absorbing layer (11) which includes sulphur (S) and selenium (Se). The first layer (11) comprises a variation, along the direction (Z) of the thickness (t) of the first layer, in the proportion of sulphur with respect to the sum of the proportions of sulphur and of selenium, the said variation being such that the first layer (11) exhibits a band-separation gradient along the direction (Z) of the thickness (t) of the first layer (11). The invention also relates to a manufacturing process and to an implemental apparatus.