Patents by Inventor Louis J. Messick

Louis J. Messick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4252580
    Abstract: An InP/SiO.sub.2 insulated gate field effect transistor which exhibits power gain at microwave frequencies is manufactured by using an n-type epitaxial semiconducting InP film on a semi-insulating InP substrate and depositing a pyrolytic silicon dioxide insulating film on the conducting InP film to form the gate insulator.
    Type: Grant
    Filed: May 21, 1979
    Date of Patent: February 24, 1981
    Inventor: Louis J. Messick
  • Patent number: 4194021
    Abstract: An InP/SiO.sub.2 insulated gate field effect transistor which exhibits power gain at microwave frequencies is manufactured by using an n-type epitaxial semiconducting InP film on a semi-insulating InP substrate and depositing a pyrolytic silicon dioxide insulating film on the conducting InP film to form the gate insulator.
    Type: Grant
    Filed: May 21, 1979
    Date of Patent: March 18, 1980
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Louis J. Messick
  • Patent number: 4161739
    Abstract: An InP/SiO.sub.2 insulated gate field effect transistor which exhibits power gain at microwave frequencies is manufactured by using an n-type epitaxial semiconducting InP film on a semi-insulating InP substrate and depositing a pyrolytic silicon dioxide insulating film on the conducting InP film to form the gate insulator.
    Type: Grant
    Filed: October 27, 1977
    Date of Patent: July 17, 1979
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Louis J. Messick