Abstract: A digitally controlled wideband phase shifter is disclosed in which an input signal is resolved into two quadrature related components, the components are scaled in a stepped digital manner in proportion to the sine and cosine of the phase shifting angle, and then recombined to reconstitute a phase shifted replica of the input signal. The scalers are segmented MESFETS of a dual gate design in which each segment, has a predetermined transconductance and may be gated "ON" or "OFF" by a control signal to affect the overall transconductance of the scaler, and thereby the scaling factor.The phase shifter is implemented by a monolithic microwave integrated circuit technique in which the preferred substrate material is gallium arsenide, and in which all active device and circuit features are formed on the substrate by a photolithographic process.

Abstract: An integrated circuit incorporating high voltage semiconductor devices which are controlled by low voltage semiconductor devices is disclosed, including a method for making the same. The low voltage devices which are capable of realizing complex logic functions on the same chip are realized with only one simple extra step in the fabrication process as compared with the process used to fabricate discrete high voltage power transistors. The process addition to implant the low voltage device does not significantly degrade the original capability associated with discrete power transistors. Both laterally developed and vertically developed devices are described. The integrated circuit combines I.sup.2 L logic with power Darlington transistors. A large area ion implantation permits one to fabricate both low and high voltage devices on one substrate. The resulting integrated circuit permits a plurality of loads to be controlled by a simple or complex control function.

Abstract: An integrated circuit incorporating high voltage semiconductor devices which are controlled by low voltage semiconductor devices is disclosed, including a method for making the same. The low voltage devices which are capable of realizing complex logic functions on the same chip are realized with only one simple extra step in the fabrication process as compared with the process used to fabricate discrete high voltage power transistors. The process addition to implant the low voltage device does not significantly degrade the original capability associated with discrete power transistors. Both laterally developed and vertically developed devices are described. The integrated circuit combines I.sup.2 L logic with power Darlington transistors. A large area ion implantation permits one to fabricate both low and high voltage devices on one substrate. The resulting integrated circuit permits a plurality of loads to be controlled by a simple or complex control function.

Abstract: The invention relates to an improved integrated injection logic circuit suitable for large scale integration. In integrated injection logic the fundamental circuit unit is a bipolar transistor having a unitary base and a unitary emitter with a plurality of electrically separate collectors used in combination with a complementary bipolar transistor for base current injection. Typically, the collector of the injector is integral with the base of the first transistor. By a novel symmetric arrangement of the individual collectors in respect to both base contacts and injectors, the response of the individual collectors is closely matched even at relatively high current levels.