Patents by Inventor Louis M. Kindt
Louis M. Kindt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11143953Abstract: The invention relates to a method used in a photolithographic process comprising depositing a film of Atomic Layered Deposition (ALD) Al2O3 on a photomask, subjecting said film of Al2O3 on the photomask to a plasma treatment and then irradiating the deposited film of ALD Al2O3 on the coated photomask at a wavelength of 193 nm.Type: GrantFiled: March 21, 2019Date of Patent: October 12, 2021Assignee: International Business Machines CorporationInventors: Robert L. Sandstrom, Peter H. Bartlau, Thomas B. Faure, Supratik Guha, Edward W. Kiewra, Louis M. Kindt, Alfred Wagner
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Publication number: 20200301270Abstract: The invention relates to a method used in a photolithographic process comprising depositing a film of Atomic layered Deposition (ALD) Al2O3 on a photomask, subjecting said film of Al2O3 on the photomask to a plasma treatment and then irradiating the deposited film of ALD Al2O3 on the coated photomask at a wavelength of 193 nm.Type: ApplicationFiled: March 21, 2019Publication date: September 24, 2020Inventors: Robert L. Sandstrom, Peter H. Bartlau, Thomas B. Faure, Supratik Guha, Edward W. Kiewra, Louis M. Kindt, Alfred Wagner
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Patent number: 8758962Abstract: In one embodiment, the invention is a method and apparatus for sub-pellicle defect reduction on photomasks. One embodiment of a photomask for use in photolithography includes a substrate on which a pattern is formed, the substrate having a frontside and an opposite backside, and a protective coating formed on at least one of the frontside and the backside, the protective coating comprising silicon-based compound.Type: GrantFiled: April 10, 2012Date of Patent: June 24, 2014Assignee: International Business Machines CorporationInventors: Jay S. Burnham, Frances A. Houle, Louis M. Kindt
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Publication number: 20120196212Abstract: In one embodiment, the invention is a method and apparatus for sub-pellicle defect reduction on photomasks. One embodiment of a photomask for use in photolithography includes a substrate on which a pattern is formed, the substrate having a frontside and an opposite backside, and a protective coating formed on at least one of the frontside and the backside, the protective coating comprising silicon-based compound.Type: ApplicationFiled: April 10, 2012Publication date: August 2, 2012Applicant: International Business Machines CorporationInventors: JAY S. BURNHAM, Frances A. Houle, Louis M. Kindt
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Patent number: 8173331Abstract: In one embodiment, the invention is a method and apparatus for sub-pellicle defect reduction on photomasks. One embodiment of a photomask for use in photolithography includes a substrate on which a pattern is formed, the substrate having a frontside and an opposite backside, and a protective coating formed on at least one of the frontside and the backside, the protective coating comprising silicon-based compound.Type: GrantFiled: January 11, 2010Date of Patent: May 8, 2012Assignee: International Business Machines CorporationInventors: Jay S. Burnham, Frances A. Houle, Louis M. Kindt
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Patent number: 7826038Abstract: A method for adjusting the flatness of a lithographic mask includes determining an initial mask flatness of the mask, determining an applied stress for bringing the mask to a desired mask flatness, and determining a mounting temperature of a pellicle frame to be mounted to the mask, the mounting temperature corresponding to the applied stress. The actual temperature of the pellicle frame is adjusted to the determined mounting temperature, and the pellicle frame is mounted to the mask at the mounting temperature.Type: GrantFiled: February 12, 2008Date of Patent: November 2, 2010Assignee: International Business Machines CorporationInventors: Emily F. Gallagher, Louis M. Kindt, James A. Slinkman, Richard E. Wistron
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Publication number: 20100178598Abstract: In one embodiment, the invention is a method and apparatus for sub-pellicle defect reduction on photomasks. One embodiment of a photomask for use in photolithography includes a substrate on which a pattern is formed, the substrate having a frontside and an opposite backside, and a protective coating formed on at least one of the frontside and the backside, the protective coating comprising silicon-based compound.Type: ApplicationFiled: January 11, 2010Publication date: July 15, 2010Applicant: International Business Machines CorporationInventors: JAY S. BURNHAM, Frances A. Houle, Louis M. Kindt
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Patent number: 7537114Abstract: An apparatus for and method of storing and transporting a photomask. A photomask storage container has fluid-tight walls, an opening for moving the photomask into and out of the container, and a sealable inlet for a storage fluid. The method includes placing the photomask in the storage container through the opening, introducing a storage fluid into the container through the inlet, closing the container opening and sealing the storage fluid inlet, whereby the storage fluid is essentially inert with respect to the photomask. The method then includes opening the container opening and contacting a surface of the photomask with an alcohol-containing gas while removing the photomask from the storage container to remove the storage fluid from the photomask surface.Type: GrantFiled: January 25, 2006Date of Patent: May 26, 2009Assignee: International Business Machines CorporationInventors: Emily F. Gallagher, Louis M. Kindt
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Publication number: 20080131795Abstract: A method for adjusting the flatness of a lithographic mask includes determining an initial mask flatness of the mask, determining an applied stress for bringing the mask to a desired mask flatness, and determining a mounting temperature of a pellicle frame to be mounted to the mask, the mounting temperature corresponding to the applied stress. The actual temperature of the pellicle frame is adjusted to the determined mounting temperature, and the pellicle frame is mounted to the mask at the mounting temperature.Type: ApplicationFiled: February 12, 2008Publication date: June 5, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Emily F. Gallagher, Louis M. Kindt, James A. Slinkman, Richard E. Wistron
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Patent number: 7355680Abstract: A method for adjusting the flatness of a lithographic mask includes determining an initial mask flatness of the mask, determining an applied stress for bringing the mask to a desired mask flatness, and determining a mounting temperature of a pellicle frame to be mounted to the mask, the mounting temperature corresponding to the applied stress. The actual temperature of the pellicle frame is adjusted to the determined mounting temperature.Type: GrantFiled: January 5, 2005Date of Patent: April 8, 2008Assignee: International Business Machines CorporationInventors: Emily F. Gallagher, Louis M. Kindt, James A. Slinkman, Richard E. Wistrom
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Patent number: 7198276Abstract: Disclosed is an electrostatic chuck and system for maintaining a device flat within the electrostatic chuck. The electrostatic chuck has a plate, height adjustment mechanisms connected to the plate; and electrostatic chuck pins connected to the height adjustment mechanisms. The system provides a measurement tool adapted to measure the flatness of the device held by the electrostatic chuck pins and a computer connected to the height adjustment mechanisms and the measurement tool. The computer adjusts the flatness of the device by adjusting the height adjustment mechanisms based on feedback from the measurement tool. The computer is adapted to change the shape of the device to conform to a pre-existing standard.Type: GrantFiled: October 24, 2003Date of Patent: April 3, 2007Assignee: International Business Machines CorporationInventors: Brian Neal Caldwell, Raymond Walter Jeffer, Louis M. Kindt
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Patent number: 7198872Abstract: A light scattering EUVL mask and a method of forming the same comprises depositing a crystalline silicon layer over an ultra low expansion substrate, depositing a hardmask over the crystalline silicon layer, patterning the hardmask; etching the crystalline silicon layer, removing the hardmask, and depositing a Mo/Si layer over the crystalline silicon layer, wherein etched regions of the crystalline silicon layer comprise uneven surfaces in the etched regions. The method further comprises depositing a photoresist mask over the hardmask, creating a pattern in the photoresist mask, and transferring the pattern to the hardmask.Type: GrantFiled: May 25, 2004Date of Patent: April 3, 2007Assignee: International Business Machines CorporationInventors: Emily E. Gallagher, Louis M. Kindt, Carey W. Thiel
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Patent number: 7132206Abstract: A method and system to minimize the affects of thermal gradient distortion in reticles. A heat source and filter or filters are used to control which part or parts of the reticle receive additional radiation. The heat created by this additional radiation minimizes any thermal gradients across the mask by supplying a constant heat flux to the entire surface of the mask. The heat source can also be used to preheat the reticle to minimize any transient start-up effects.Type: GrantFiled: September 17, 2002Date of Patent: November 7, 2006Assignee: International Business Machines CorporationInventor: Louis M. Kindt
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Patent number: 7049035Abstract: A method for controlling the linewidth of a feature formed within an advanced lithography mask includes electrochemically depositing an additive material on exposed sidewalls of an etched first layer of the mask, wherein the top of the etched first layer remains covered by a hardmask used during the etching of the first layer. A second layer beneath the etched first layer is resistant to the electrochemical deposition of the additive material thereupon.Type: GrantFiled: November 17, 2003Date of Patent: May 23, 2006Assignee: International Business Machines CorporationInventors: Louis M. Kindt, Carey W. Thiel
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Patent number: 6777137Abstract: An extreme ultraviolet lithography (EUVL) mask structure and associated method of formation. A first conductive layer is provided between a buffer layer and an absorber layer such that the buffer layer is on a multilayer stack. The multilayer stack is adapted to substantially reflect EUV radiation incident thereon. The absorber layer is adapted to absorb essentially all of EUV radiation incident thereon. A mask pattern is formed in the absorber layer. Formation of the mask pattern in the absorber layer is accompanied by inadvertent formation of a defect in the absorber layer. The defect is subsequently repaired. The mask pattern may be extended into the first conductive layer and into the buffer layer in a substantially defect-free process that exposes a portion of the multilayer stack. A second conductive layer may be provided on the absorber layer, wherein the mask pattern is also formed in the second conductive layer.Type: GrantFiled: July 10, 2002Date of Patent: August 17, 2004Assignee: International Business Machines CorporationInventors: Emily E. Fisch, Louis M. Kindt, James P. Levin, Michael R. Schmidt, Carey T. Williams
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Publication number: 20040131947Abstract: A reflective mask, useful in extreme ultraviolet lithography (EUVL), and method of formation are disclosed. Instead of patterning an absorbing film stack, as is the case with conventional EUVL masks, the reflective film stack itself is patterned and etched to form a trench in the reflective stack. A hard mask is deposited directly on the reflective substrate. It is patterned and repaired. Then the reflective film is removed in the patterned area to create absorbing trenches. The hard mask may then be stripped or remain in place on the final mask. A liner may be formed on the trench to absorb radiation and protect the sidewalls.Type: ApplicationFiled: January 7, 2003Publication date: July 8, 2004Applicant: International Business Machines CorporationInventors: Emily Fisch Gallagher, Louis M. Kindt, Mark Lawliss, Kenneth C. Racette, Carey W. Thiel
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Publication number: 20040053169Abstract: A method and system to minimize the affects of thermal gradient distortion in reticles. A heat source and filter or filters are used to control which part or parts of the reticle receive additional radiation. The heat created by this additional radiation minimizes any thermal gradients across the mask by supplying a constant heat flux to the entire surface of the mask. The heat source can also be used to preheat the reticle to minimize any transient start-up effects.Type: ApplicationFiled: September 17, 2002Publication date: March 18, 2004Applicant: International Business Machines CorporationInventor: Louis M. Kindt
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Publication number: 20040009408Abstract: An extreme ultraviolet lithography (EUVL) mask structure and associated method of formation. A first conductive layer is provided between a buffer layer and an absorber layer such that the buffer layer is on a multilayer stack. The multilayer stack is adapted to substantially reflect EUV radiation incident thereon. The absorber layer is adapted to absorb essentially all of EUV radiation incident thereon. A mask pattern is formed in the absorber layer. Formation of the mask pattern in the absorber layer is accompanied by inadvertent formation of a defect in the absorber layer. The defect is subsequently repaired. The mask pattern may be extended into the first conductive layer and into the buffer layer in a substantially defect-free process that exposes a portion of the multilayer stack. A second conductive layer may be provided on the absorber layer, wherein the mask pattern is also formed in the second conductive layer.Type: ApplicationFiled: July 10, 2002Publication date: January 15, 2004Applicant: International Business Machines CorporationInventors: Emily E. Fisch, Louis M. Kindt, James P. Levin, Michael R. Schmidt, Carey T. Williams