Abstract: A multi-wavelength laser-emitting component presenting a plurality of Bragg grating laser-emitting sources, wherein the Bragg gratings of said sources correspond to a diffraction grating common to the various sources, with the pitch thereof varying continuously from one source to another.

Abstract: The present invention relates to a surface-emitting power laser, this laser comprises, on a semiconducting substrate, a plurality of elementary semiconductor stripe lasers, and means for reflecting along a direction perpendicular to the substrate, light generated by each of the elementary lasers.

Abstract: In a process for producing integrated structures having at least one cleaved optical guide, the following are successively epitaxied onto a planar surface of a monocrystalline substrate parallel to a plane of the substrate having crystal orientation <1,0,0>: an etching barrier layer for the substrate, a lower optical confinement layer, an active layer and an upper optical confinement layer. Then, the epitaxied layers are etched to form an optical guide strip having a portion oriented parallel to a first direction of crystal orientation <0,1,1> of the substrate.

Abstract: The invention relates to a process for producing a structure with integrated optical waveguide and mirror, comprising the stages consisting in:etching a substrate to form an inclined plane on the substrate,depositing by epitaxy, on the face of the substrate carrying the inclined plane, various layers of materials capable of forming an optical waveguide,clearing away the substrate, via its face opposite the epitaxed layers, up to the inclined plane, to form a mirror capable of reflecting light from the optical waveguide in a given direction.

Abstract: An optoelectronic device having an optical guide and photodetector integrated on a common substrate is provided with a light coupling means for increasing the absorption of light within the photodetector. This means consists of freeing the lower portion of the guide layer--opposite the photodetector--to bring it into contact with air. The use of air has the effect of repelling the light propagating through the guide layer towards the absorbent layer of the photodetector thereby increasing the photodetector efficiency.

Abstract: Method for making an integrated guide/detector structure made of a semiconductive material.

Abstract: A semiconductor device capable of producing a multiwavelength laser effect comprising a substrate having thereon at least two double heterostructure stacks, each stack comprising at least one active layer bounded by two confinement layers, the stacks being in the form of elongated strips disposed side-by-side, electrically insulated from each other. Each stack comprises a P-N junction therein which is individually and electrically operable and which is situated in the vicinity of an active layer of a different composition and rank in each stack. The transverse opposite ends of the strips are optically prepared and the upper surfaces of the strips form an upper surface for the device which is substantially flat.

Abstract: A method of producing a quasi-flat semiconductor device capable of a multi-wavelength laser effect and the device thus produced.On the basis of a double heterostructure stack supported by a substrate comprising steps, following levelling of the stack and diffusion through a flat surface, a semiconductor device is obtained which is capable of a multi-wavelength laser effect, of which the different junctions are situated in a plane parallel with the base of the substrate.

Abstract: A double heterostructure stack comprising confinement layers (CC) enclosing active layers (CA) is formed on a substrate (S), e.g. a N+ type gallium arsenide substrate. Selective etching is performed so as to lay bare the confinement layers at different depths, e.g. CC4, CC3, CC2. The confinement layers initially receive contact layers (CP) made of P-type gallium arsenide. Regions R1, R2, and R3 are formed through the contact layers to constitute junctions with the uppermost active layers (respectively CA1, CA2, CA3). Valleys (V10, V21, V32) are formed to isolate the above-defined elementary stacks. After a metal contact layer has been formed, and after the end surfaces have been optically prepared, a multi-wavelength laser device is obtained.

Abstract: A double heterostructure stack comprising confinement layers (CC) enclosing active layers (CA) is formed on a substrate (S), e.g. a N+ type gallium arsenide substrate. Selective etching is performed so as to lay bare the confinement layers at different depths, e.g. CC4, CC3, CC2. The confinement layers initially receive contact layers (CP) made of P-type gallium arsenide. Regions R1, R2, and R3 are formed through the contact layers to constitute junctions with the uppermost active layers (respectively CA1, CA2, CA3). Valleys (V10, V21, V32) are formed to isolate the above-defined elementary stacks. After a metal contact layer has been formed, and after the end surfaces have been optically prepared, a multi-wavelength laser device is obtained.

Abstract: Process is disclosed for the production of a semiconductor laser with tape geometry and laser obtained by this process.After producing a double heterostructure on a substrate, a p-dopant is implanted in these layers, so that the two layers are made insulating. This is followed by local annealing by focussing an appropriate energy source. The electrical conduction properties of the annealed part are restored and it is doped. Thus, a p-doped conductive tape is produced between two electrically insulating parts above the active zone of the laser, which increases the current confinement in said zone.The disclosed invention is used in optical telecommunications.

Abstract: Process for the production of a monolithic integrated optical device incorporating a semiconductor laser and an optical waveguide, as well as to a device obtained by this process.The substrate is given a profile having at least one step. On said substrate is deposited by a single epitaxy operation performed in the vapour phase and in a successive manner a first confinement layer, a guidance layer made from a material transparent for the radiation emitted by the laser, a second confinement layer, an active layer, a third confinement layer and a contact layer. The transparent material has a refractive index higher than the indices of the confinement layers surrounding the same. Thickness values are given to the different layers such that the active layer of the lower stack faces the transparent layer of the upper stack.Application to optical telecommunications.

Abstract: Process for manufacturing a semiconductor laser having a buried ribbon. After making a double heterostructure (2, 3, 4, 5) on a substrate (1), there is implanted in the contact layer (5) a p-type doping material, which has the effect of rendering it amorphous. The unit, except for a ribbon, is etched which leaves a mesa. A resumption of epitaxy makes it possible to bury the channel. This resumption does not lead to a crystalline growth on the upper surface of the contact layer, although the annealing that takes place during the resumption of epitaxy gives good ohmic contacts at the level of the implanted layer.