Abstract: A self-aligned technique for making metal-to-junction contacts in a shallow-junction large-scale-integrated device involves opening very small contact windows in the intermediate insulating layer of the device. These windows respectively overlie only limited central regions of the junctions. Impurities are then applied via the contact windows to provide deeper junction portions directly below the windows. As a result, metallic contact regions subsequently deposited in the windows are exactly aligned with respect to the deeper junction portions. Penetration or spiking of the junctions by the metallic regions is thereby significantly reduced.