Abstract: An electro-optical device with a transparent substrate is produced by epitaxially first growing the device layers, followed by that of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The device layers have dopants with sufficient low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised up each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. In other embodiments, the device is either temporarily removed from the LPE reactor or is transferred to another reactor.

Abstract: An electro-optical device with a transparent substrate is produced by epitaxially first growing the active device layers, followed by growth of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The active device layers have dopants with sufficiently low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. When a epitaxial layer is oxidizable, a non-oxidizable cap is temporarily grown on it in between growths and during the temperature heat up periods.

Abstract: An electro-optical device with a transparent substrate is produced by epitaxially first growing the device layers, followed by that of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The device layers have dopants with sufficient low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised up each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. In other embodimens, the device is either temporarily removed from the LPE reactor or is transferred to another reactor.