Abstract: In one example, a system comprises an analog neural memory array comprising a plurality of non-volatile memory cells arranged into rows and columns; and a voltage generator to provide a voltage to one or more rows of the analog neural memory array, the voltage generator comprising a voltage ladder to generate a plurality of voltages according to a logarithmic formula.

Abstract: Numerous examples are disclosed of an artificial neural network comprising a plurality of reference arrays used for configuration of a vector-by-matrix multiplication array. In one example, a system comprises a vector-by-matrix multiplication array in an artificial neural network; and a plurality of reference arrays characterized by different I-V curves, wherein one or more of the plurality of reference arrays are used to generate input voltage the vector-by-matrix multiplication array during operation.

Abstract: Examples for ultra-precise tuning of a selected memory cell are disclosed. In one example, a method of programming a first memory cell in a neural memory to a target value is disclosed, the method comprising programming a second memory cell by applying programming voltages to terminals of the second memory cell; and determining if an output of the first memory cell has reached the target value.

Abstract: Embodiments for ultra-precise tuning of a selected memory cell are disclosed. The selected memory cell optionally is first programmed using coarse programming and fine programming methods. The selected memory cell then undergoes ultra-precise programming through the programming of an adjacent memory cell. As the adjacent memory cell is programmed, capacitive coupling between the floating gate of the adjacent memory cell and the floating gate of the selected memory cell will cause the voltage of the floating gate of the selected memory cell to increase, but in smaller increments than could be achieved by programming the selected memory cell directly. In this manner, the selected memory cell can be programmed with ultra-precise gradations.

Abstract: Embodiments for ultra-precise tuning of a selected memory cell are disclosed. The selected memory cell optionally is first programmed using coarse programming and fine programming methods. The selected memory cell then undergoes ultra-precise programming through the programming of an adjacent memory cell. As the adjacent memory cell is programmed, capacitive coupling between the floating gate of the adjacent memory cell and the floating gate of the selected memory cell will cause the voltage of the floating gate of the selected memory cell to increase, but in smaller increments than could be achieved by programming the selected memory cell directly. In this manner, the selected memory cell can be programmed with ultra-precise gradations.